FDP100N10_12 [FAIRCHILD]
N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ; N沟道MOSFET PowerTrench® 100V ， 75A ， 10mÎ ©
| 型号： | FDP100N10_12 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ |
| 文件： | 总8页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2012
FDP100N10
N-Channel PowerTrench MOSFET
100V, 75A, 10mΩ
®
Features
Description
•
•
•
•
RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(on)
•
•
High power and current handing capability
RoHS compliant
Applications
•
DC to DC converters / Synchronous Rectification
D
G
TO-220
FDP Series
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Ratings
Units
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
100
±20
V
- Continuous (TC = 75oC)
- P uls ed
75
A
IDM
D rai n Cur rent
(Note 1)
(Note 2)
(Note 3)
300
A
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
365
mJ
V/ns
W
W/oC
oC
6
(TC = 25oC)
- Derate above 25oC
208
PD
Power Dissipation
1.4
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.72
Units
RθJC
RθCS
RθJA
0.5
oC/W
62.5
©2012 Fairchild Semiconductor Corporation
FDP100N10 Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP100N10
FDP100N10
TO-220AB
Tube
N/A
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
D = 250μA, Referenced to 25oC
DS = 100V, VGS = 0V
100
-
-
-
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
-
-
0.1
V/oC
/
ΔTJ
V
-
-
-
1
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 100V, VGS = 0V, TJ = 150oC
-
-
500
±100
IGSS
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.5
-
4.5
10
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
VGS = 10V, ID = 75A
-
-
8.2
110
VDS = 10V, ID = 37.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
5500
530
220
76
7300
710
325
100
-
pF
pF
pF
nC
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
DS = 50V, ID = 75A
GS = 10V
30
Qgd
20
-
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
70
150
540
260
240
ns
ns
ns
ns
VDD = 50V, ID = 75A
GS = 10V, RGEN = 25Ω
265
125
115
V
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
75
300
1.25
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 75A
-
V
71
164
ns
nC
VGS = 0V, ISD = 75A
dIF/dt = 100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
o
2: L = 0.13mH, I = 75A, V = 25V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
o
3:
I
≤ 75A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25 C
SD
DD
DSS J
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
2
FDP100N10 Rev. C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
500
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
10
1
100
150oC
-55oC
25oC
10
5
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
2
4
6
8
10
12
0.1
1
5
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
1000
0.020
0.015
0.010
0.005
0.000
100
10
1
150oC
VGS = 10V
VGS = 20V
25oC
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
2. 250μs Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100 150 200 250 300 350
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
8000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 80V
VDS = 50V
= C + C
ds gd
oss
rss
= C
gd
V
DS = 25V
8
6
4
2
0
6000
4000
2000
0
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
Crss
*Note: ID = 75A
60 75
0.1
1
10
30
0
15
30
45
90
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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3
FDP100N10 Rev. C1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
2. ID = 250μA
2. ID = 75A
0.0
-100
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
500
100
80
60
40
20
0
100 μs
10
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
1
1 ms
TJ = MAX RATED
RθJc = 0.72 oC/W
Tc = 25 oC
10 ms
100 ms
DC
0.1
0.1
25
50
75
100
125
150
175
1
10
100
400
TC, Case Temperature [oC]
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
0.05
PDM
0.02
0.01
t1
t2
0.01
1E-3
*Notes:
1. ZθJC(t) = 0.72oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
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4
FDP100N10 Rev. C1
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
5
FDP100N10 Rev. C1
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
FDP100N10 Rev. C1
Mechanical Dimensions
TO-220
www.fairchildsemi.com
7
FDP100N10 Rev. C1
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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Marking Small Speakers Sound Louder SignalWise™
and Better™
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Saving our world, 1mW/W/kW at a time™
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Solutions for Your Success™
SPM®
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TriFault Detect™
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®
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
8
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FDP100N10 Rev. C1
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