FDP6670AS [FAIRCHILD]
30V N-Channel PowerTrench SyncFET; 30V N沟道的PowerTrench SyncFET
| 型号： | FDP6670AS |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench SyncFET |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2005
FDP6670AS/FDB6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
• 31 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (28nC typical)
RDS(ON)
and low gate charge.
The FDP6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
FDP Series
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
V
A
±20
Drain Current – Continuous
62
– Pulsed
(Note 1)
150
PD
W
W/°C
°C
Total Power Dissipation @ TC = 25°C
62.5
Derate above 25°C
0.5
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
–55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
°C
275
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.1
°C/W
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
FDB6670AS
FDB6670AS
FDP6670AS
FDP6670AS
Device
Reel Size
Tape width
24mm
24mm
n/a
Quantity
FDB6670AS
13’’
800 units
800 units
45
FDB6670AS_NL (Note 3)
FDP6670AS
13’’
Tube
Tube
FDP6670AS_NL (Note 4)
n/a
45
FDP6670AS/FDB6670AS Rev A(X)
©2005 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 1mA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
ID = 26mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 24 V, VGS = 0 V
500
µA
nA
IGSS
VGS = ±20 V, VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 1mA
1
1.7
3
V
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
–3.4
ID = 26mA, Referenced to 25°C
mV/°C
mΩ
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
6.8
8.4
9
8.5
10.5
12.5
V
GS=10 V, ID =31 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 31 A
ID(on)
gFS
On–State Drain Current
60
A
S
Forward Transconductance
84
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1570
440
160
1.9
pF
pF
pF
Ω
V
DS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
9
18
22
43
34
29
29
40
23
39
21
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
12
27
19
16
16
25
13
28
15
5
V
DS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
DS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
Qg
Qgs
Qgd
Qgd
Total Gate Charge, Vgs=10V
Gate–Source Charge, Vgs=5V
Gate–Drain Charge
V
DS = 15 V, ID = 31 A,
Gate–Drain Charge
5
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
(Note 1)
(Note 1)
0.5
0.6
20
0.7
0.9
V
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
nS
nC
diF/dt = 300 A/µs
(Note 2)
Qrr
14
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
3. FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label.
4. FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label.
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics
150
1.8
1.6
1.4
1.2
1
VGS = 10V
4.5V
VGS = 3.5V
6.0V
5.0V
120
90
60
30
0
4.0V
4.0V
4.5V
3.5V
5.0V
6.0V
10V
3.0V
0.8
0
1
2
3
4
0
30
60
90
120
150
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
1.6
1.4
1.2
1
ID = 31A
ID = 15.5A
VGS = 10V
0.017
0.012
0.007
0.002
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
60
40
20
0
10
1
VGS = 0V
VDS = 5V
TA = 125oC
25oC
TA = 125oC
0.1
0.01
-55oC
-55oC
25oC
1.5
2
2.5
3
3.5
4
0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics (continued)
10
2400
1800
1200
600
0
ID = 31A
f = 1MHz
VGS = 0 V
8
VDS = 10V
20V
6
Ciss
15V
4
Coss
2
0
Crss
0
6
12
18
24
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
1000
800
600
400
200
0
SINGLE PULSE
RθJC = 2.1°C/W
T
A = 25°C
100µs
10ms
100m
RDS(ON) LIMIT
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJC = 2.1oC/W
TA = 25oC
1
0.1
1
10
100
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 2.1 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
SINGLE PULSE
TJ - Tc = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670AS.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
TA = 125oC
0.01
TA = 100oC
0.001
0.0001
TA = 25oC
0.00001
0
10
20
30
V
DS, REVERSE VOLTAGE (V)
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
TIME: 12.5ns/div
Figure 12. FDP6670AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670AS/FDB6670AS Rev A (X)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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FACT™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
SuperFET™
SuperSOT™-3
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PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
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