FDPF20N50 [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET型号: | FDPF20N50 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 500V N-Channel MOSFET |
文件: | 总10页 (文件大小:1010K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
February 2007
TM
UniFET
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V
Low gate charge ( typical 45.6 nC)
Low Crss ( typical 27 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
TO-220F
FDPF Series
S
TO-220
FDP Series
G D
S
G
D S
Absolute Maximum Ratings
Symbol
Parameter
FDP20N50 FDPF20N50
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
20
12.9
20 *
12.9 *
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
80
80 *
A
V
VGSS
EAS
IAR
Gate-Source voltage
±30
1110
20
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
25
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
- Derate above 25°C
250
2.0
62
0.5
W
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP20N50 FDPF20N50
Unit
°C/W
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.5
0.5
2.0
--
RθCS
RθJA
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 Rev. B
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDP20N50
Device
FDP20N50
FDPF20N50
Package
TO-220
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF20N50
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
D = 250µA, Referenced to 25°C
500
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
DS = 400V, TC = 125°C
--
--
--
--
1
10
µA
µA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
3.0
--
--
5.0
0.23
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 10A
0.20
24.6
(Note 4)
gFS
Forward Transconductance
VDS = 40V, ID = 10A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2400
355
27
3120
465
--
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 20A
--
--
--
--
--
--
--
95
200
760
210
220
59.5
--
ns
ns
RG = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
375
100
105
45.6
14.8
21.6
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 400V, ID = 20A
GS = 10V
nC
nC
nC
V
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
20
80
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 20A
--
V
VGS = 0V, IS = 20A
507
7.20
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.0mH, I = 20A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 20A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP20N50 / FDPF20N50 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150oC
25oC
101
Bottom : 5.5 V
101
-55oC
100
* Notes :
* Notes :
1. 250µs Pulse Test
1. VDS = 40V
o
2. 250µs Pulse Test
2. TC = 25
C
100
10-1
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.8
0.6
VGS = 10V
101
0.4
150oC
25oC
VGS = 20V
0.2
*Notes :
1. VGS = 0V
o
2. 250µs Pulse Test
* Note : TJ = 25 C
0.0
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
15
30
45
60
75
90
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
6000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
VDS = 250V
VDS = 400V
5000
4000
3000
2000
1000
0
Crss = Cgd
Coss
C
iss
6
4
*
Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
2
* Note : ID = 20A
0
10-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP20N50 / FDPF20N50 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
2. ID = 250µA
2. ID = 10 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9-1. Maximum Safe Operating Area
- FDP20N50
Figure 9-2. Maximum Safe Operating Area
- FDPF20N50
102
101
100
102
10 µs
10 µs
100 µs
100 µs
1 ms
1 ms
10 ms
101
10 ms
100 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
DC
100
* Notes :
* Notes :
1. TC = 25 oC
2. TJ = 150 o
3. Single Pulse
-1
10
1. TC = 25 o
2. TJ = 150 o
C
C
C
3. Single Pulse
10-1
-2
10
100
101
102
103
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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FDP20N50 / FDPF20N50 Rev. B
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP20N50
1 0 0
D = 0 .5
1 0 -1
0 .2
0 .1
PDM
0 .0 5
t1
t2
0 .0 2
0 .0 1
*
N o te s :
o
1 0 -2
1 . Z θ J C (t)
2 . D u ty F a c to r,
3 . T JM T C P D
=
0 .5 C /W M a x.
s in g le p u ls e
D
=
t1 /t2
* Z θ J C (t)
M
-
=
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve - FDPF20N50
1 0 0
D = 0 .5
0 .2
0 .1
1 0 -1
PDM
0 .0 5
0 .0 2
0 .0 1
t1
t2
*
N o te s :
o
1 .
Z
θ J C (t)
=
2 .0 C /W M a x.
1 0 -2
2 . D u ty F a c to r,
D
=
Z
t1 /t2
θ J C (t)
s in g le p u ls e
3 . T J M T C P D M
-
=
*
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
5
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FDP20N50 / FDPF20N50 Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FDP20N50 / FDPF20N50 Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP20N50 / FDPF20N50 Rev. B
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
ø3.60 0.10
–0.05
1.27 0.10
1.52 0.10
0.80 0.10
+0.10
–0.05
0.50
2.40 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
10.00 0.20
8
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FDP20N50 / FDPF20N50 Rev. B
Mechanical Dimensions
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
#1
0.35 0.10
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
9.40 0.20
9
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FDP20N50 / FDPF20N50 Rev. B
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As used herein:
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which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, or (c) whose failure to perform when
properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
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affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
10
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FDP20N50 / FDPF20N50 Rev. B
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