FDS2670D84Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | FDS2670D84Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 光电二极管 晶体管 功率场效应晶体管 |
| 文件： | 总6页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2001
FDS2670
200V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• High power and current handling capability
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
200
VGSS
ID
Gate-Source Voltage
V
A
±20
3.0
20
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
1.2
1.0
3.2
W
(Note 1c)
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
V/ns
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
RθJA
RθJA
RθJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS2670
FDS2670
13’’
12mm
2500 units
FDS2670 Rev C1(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 100 V, ID = 3.0 A
375
3.0
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
200
V
VGS = 0 V,
ID = 250 µA
Breakdown Voltage Temperature
Coefficient
214
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 160 V, VGS = 0 V
1
µA
nA
nA
IGSSF
IGSSR
VGS = 20 V,
VGS = –20 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
2
4
4.5
V
V
DS = VGS
,
ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
–10
∆VGS(th)
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS =10 V, ID =3.0 A, TJ =125°C
ID = 3.0 A
100
205
130
275
mΩ
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10 V,
VDS = 10 V
ID = 3.0 A
20
A
S
Forward Transconductance
15
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1228
112
17
pF
pF
pF
V
DS = 100 V, V GS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
13
8
23
16
48
40
43
ns
ns
V
DD = 100 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
30
25
27
7
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
V
DS = 100 V, ID = 3 A,
VGS = 10 V
10
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V,
IS = 2.1 A (Note 2)
0.7
Voltage
FDS2670 Rev C1(W)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
b) 105°/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
mounted on a 1in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
FDS2670 Rev C1(W)
Typical Characteristics
1.6
1.4
1.2
1
20
VGS = 10V
6.5V
VGS = 5.5V
15
10
5
6.0V
6.0V
6.5V
10.0V
5.5V
0.8
0
0
4
8
12
16
20
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.3
0.2
0.1
0
2.5
ID = 3.0A
ID = 1.5 A
VGS = 10V
2
1.5
1
TA = 125oC
TA = 25oC
0.5
0
-50
-25
0
25
50
75
100
125
150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
24
18
12
6
VGS = 0V
VDS = 15V
TA = 125oC
10
1
25oC
-55oC
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
3
4
5
6
7
8
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2670 Rev C1(W)
Typical Characteristics
15
2000
1500
1000
500
0
f = 1MHz
GS = 0 V
ID = 3.0 A
VDS = 40V
V
70
12
9
100 V
CISS
6
3
COSS
CRSS
0
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
100
80
60
40
20
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 125°C/W
µ
100
s
10
1
TA = 25°C
10ms
100ms
1s
10s
DC
0.1
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
T
A = 25oC
0.01
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
0.1
1
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
RθJA = 125°C/W
0.2
0.1
P(pk)
0.1
t1
0.05
t2
0.02
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS2670 Rev C1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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