FDS2672-F085 [ONSEMI]
N 沟道，UltraFET® 沟槽，200V，3.9A，70mΩ;
| 型号： | FDS2672-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET® 沟槽，200V，3.9A，70mΩ |
| 文件： | 总7页 (文件大小：642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS2672-F085
N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
General Description
Features
Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
This single N-Channel MOSFET is produced using
ON Semiconductor’s advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
Fast switching speed
Application
High performance trench technology for extremely low
DC-DC conversion
rDS(on)
Qualified to AEC Q101
RoHS compliant
D
D
5
6
7
8
4
3
2
1
D
D
SO-8
G
S
S
S
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
200
±20
3.9
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
(Note 1a)
ID
A
mJ
W
50
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
37.5
2.5
Power Dissipation
1.0
TJ, TSTG
Operating and Storage Temperature
-55 to 150
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
(Note 1)
(Note 1a)
(Note 1b)
25
50
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
°C/W
125
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
12mm
Quantity
2500 units
FDS2672
FDS2672-F085
13’’
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
1
Publication Order Number:
FDS2672-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
200
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, referenced to 25°C
206
mV/°C
V
DS = 160V, VGS=0V
1
µA
µA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 160V, VGS=0V TJ = 55°C
VGS = ±20V
10
±100
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
2.9
-11
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
V
GS = 10V, ID = 3.9A
59
63
70
80
rDS(on)
gFS
Drain to Source On Resistance
Forward Transcondductance
VGS = 6V, ID = 3.5A
mΩ
VGS = 10V, ID = 3.9A, TJ = 125°C
VDS = 10V,ID = 3.9A
124
15
148
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1905
100
30
2535
135
45
pF
pF
pF
Ω
VDS = 100V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
0.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
22
10
35
10
33
11
7
35
20
56
20
46
ns
ns
VDD = 100V, ID = 3.9A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
nC
nC
nC
VDD =100V ID = 3.9A
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
VGS = 0V, IS = 3.9A
0.75
67
1.2
101
269
V
IF = 3.9A, di/dt = 100A/µs
IF = 3.9A, di/dt = 100A/µs
ns
nC
Qrr
Reverse Recovery Charge
179
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
a) 50°C/W (10 sec)
b) 125°C/W when mounted on a
minimum pad .
62.5°C/W steady state
2
when mounted on a 1in
pad of 2 oz copper
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 5A, V = 100V, V = 10V
J
AS
DD
GS
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2
Typical Characteristics TJ = 25°C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
GS
VGS = 4.5V
V
= 6V
GS
VGS = 5V
VGS = 6V
V
= 5V
GS
V
= 4.5V
GS
VGS = 10V
0
5
10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT(A)
0
1
2
3
4
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
180
2.8
2.2
1.6
1.0
0.4
PULSE DURATION = 80µs
I
= 3.9A
I
D
= 3.9A
D
DUTY CYCLE = 0.5%MAX
160
140
120
100
80
V
= 10V
GS
T
J
= 150oC
60
T
J
= 25oC
6.0
40
3.0
10
4.5
7.5
9.0
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
30
100
PULSE DURATION = 80µs
V
GS
= 0V
DUTY CYCLE = 0.5%MAX
25
10
1
V
= 10V
DD
= 150oC
20
15
10
5
= 150oC
T
J
T
J
T
J
= 25oC
T
= 25oC
J
0.1
0.01
T
J
= -55oC
T
J
= - 55oC
5
0
1E-3
2
3
4
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
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3
Typical Characteristics TJ = 25°C unless otherwise noted
10000
10
f = 1MHz
= 0V
V
GS
C
iss
V
DD
= 50V
8
6
4
2
0
1000
100
10
V
= 100V
DD
C
oss
V
= 150V
DD
C
rss
0.1
1
10
100
0
8
16
24
32
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
4.0
3.5
3.0
10
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25oC
1
V
= 6V
GS
TJ = 125oC
R
θJA
= 50oC/W
50
0.1
0.01
25
75
100
125
150
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE(ms)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Ambient Continuous Drain Current vs
Case Temperature
102
3000
o
T
= 25 C
A
VGS = 10V
1000
100
10
FOR TEMPERATURES
101
100
o
100us
1ms
ABOVE 25 C DERATE PEAK
150 – T
A
I = I
-----------------------
25
125
LIMITED BY
PACKAGE
10-1
10-2
10-3
10ms
100ms
1s
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
DC
T
= MAX RATED
= 25OC
SINGLE PULSE
J
T
A
1
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
1E-3
1E-4
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
x R
PEAK T = P
J
x Z
+ T
DM
θJA
θJA A
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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