FDW6923 [FAIRCHILD]
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode; P沟道2.5V指定的PowerTrench MOSFET与肖特基二极管
| 型号： | FDW6923 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| 文件： | 总5页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2002
FDW6923
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
General Description
Features
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
• –3.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V
RDS(ON) = 0.075 Ω @ VGS = –2.5 V
• V < 0.55 V @ 1 A
F
• High performance trench technology for extremely
Applications
low RDS(ON)
• DC/DC conversion
• Low profile TSSOP-8 package
A
A
5
6
7
8
4
3
2
1
A
C
G
S
S
D
TSSOP-8
Pin 1
MOSFET Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
–20
Units
V
V
A
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
± 12
ID
(Note 1)
–3.5
–30
MOSFET Power Dissipation (minimum pad)
Schottky Power Dissipation (minimum pad)
(Note 1)
(Note 1)
1.2
1.0
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Schottky Maximum Ratings
VRRM
Repetitive Peak Reverse Voltage
Average Forward Current
Peak Forward Current
20
1.5
30
V
A
A
IF
IFM
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(minimum pad)
MOSFET: 115
Schottky: 130
RθJA
°C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6923
FDW6923
13’’
16mm
3000 units
FDW6923 Rev. D(W)
2002 Fairchild Semiconductor International
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
V
GS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–16
ID = –250 µA, Referenced to25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –16 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
VGS = –12 V,
VGS = 12 V,
VDS = 0 V
VDS = 0 V
–100
100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.6
–15
–1.0
3
–1.5
V
V
DS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
V
GS = –4.5 V, ID = –3.5 A
36
56
49
45
75
72
VGS = –2.5 V, ID = –2.7 A
VGS=–4.5 V, ID =–3.5A, TJ=125°C
VGS = –4.5 V,
ID(on)
gFS
On–State Drain Current
VDS = –5 V
A
S
Forward Transconductance
VDS = –5 V,
ID = –3.5A
13.2
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1030
280
pF
pF
pF
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
120
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
18
20
32
55
55
16
ns
ns
VDD = –5 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
34
ns
34
ns
Qg
Qgs
Qgd
9.7
2.2
2.4
nC
nC
nC
V
DS = –5V,
ID = –3.5 A,
VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.25
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.25 A (Note 2)
–0.6
IGSSR
Gate–Body Leakage, Reverse
VGS = 12 V,
VDS = 0 V
100
nA
Schottky Diode Characteristics
0.6
1
50
8
TJ=25°C
µA
mA
V
IR
Reverse Leakage
VR = 20V
IF = 1A
TJ=125°C
TJ=25°C
TJ=125°C
0.48
0.42
50
0.55
0.50
VF
Forward Voltage
V
CT
Junction Capacitance
VR = 10V
pF
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
RθJA is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW6923 Rev. D (W)
Typical Characteristics
30
1.6
1.4
1.2
1
VGS = -4.5V
-4.0V
-3.5V
-3.0V
VGS = -2.5V
24
18
12
6
-3.0V
-2.5V
-3.5V
-4.0V
-4.5V
-2.0V
0
0.8
0
1
2
3
4
5
150
4
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
- ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.15
ID = -3.5A
GS = -4.5V
ID = -1.7A
V
1.4
1.2
1
0.12
0.09
0.06
0.03
0
TA = 125oC
TA = 25oC
0.8
0.6
1.5
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
24
18
12
6
VGS = 0V
TA = -55oC
25oC
VDS = -5V
10
TA = 125oC
125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
1.3
2.2
3.1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW6923 Rev. D (W)
Typical Characteristics
5
1800
1500
1200
900
600
300
0
ID = -3.5A
VDS = -5V
f = 1MHz
VGS = 0 V
-10V
4
3
2
1
0
-15V
CISS
COSS
CRSS
0
3
6
9
12
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
1
0.01
TJ = 125o
C
0.001
0.0001
TJ
= C
100o
0.1
0.00001
TJ
= C
25o
TJ = 25o
C
0.000001
0.0000001
0.00000001
0.01
0.001
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
VF
,
F O R W ARD VO LT AG E (V)
V
, REVERSE VOLTAGE (V)
R
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
0.2
RθJA = 135 °C/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDW6923 Rev. D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
â
â
SILENT SWITCHER
SMARTSTART
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
UHC
UltraFET
VCX
FAST
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
â
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
Power247
I2C
â
EcoSPARK
PowerTrench
E2CMOSTM
ISOPLANAR
LittleFET
MicroFET
MicroPak
QFET
QS
QT Optoelectronics
Quiet Series
EnSignaTM
TinyLogic
TruTranslation
FACT
FACT Quiet Series
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ H5
相关型号：
©2020 ICPDF网 联系我们和版权申明