FDWS86369-F085 [ONSEMI]
N-Channel PowerTrench® MOSFET 80V, 65A, 7.5mΩ;
| 型号： | FDWS86369-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel PowerTrench® MOSFET 80V, 65A, 7.5mΩ |
| 文件： | 总7页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
80 V
7.5 mW @ 10 V
65 A
80 V, 65 A, 7.5 mW
ELECTRICAL CONNECTION
FDWS86369-F085
Features
• Typ R
• Typ Q
= 5.9 mW at V = 10 V; I = 65 A
GS D
DS(on)
= 35 nC at V = 10 V; I = 65 A
g(tot)
GS
D
• UIS Capability
• Wettable Flanks for Automatic Optical Inspection (AOI)
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
N−Channel MOSFET
Top
Bottom
Applications
D
D
D
• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems
D
G
S
S
S
Pin 1
DFNW8
CASE 507AU
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
MARKING DIAGRAM
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
80
Unit
V
V
DSS
V
GS
20
V
I
D
Drain Current (T = 25°C)
A
C
ON
AYWWWL
FDWS
86369
Continuous (V = 10 V) (Note 1)
65
(see Fig.
141)
GS
Pulsed
E
AS
Single Pulse Avalanche Energy
(Note 2)
27
mJ
P
D
Power Dissipation
Derate above 25°C
107
0.71
W
W/°C
A
Y
= Assembly Location
= Year
WW
WL
FDWS
86369
= Work Week
= Assembly Lot
= Device Code
= Device Code
T , T
Operating and Storage Temperature
−55 to +175
°C
J
STG
R
Thermal Resistance
(Junction to case)
1.4
°C/W
θ
JC
R
Maximum Thermal Resistance
(Junction to Ambient) (Note 3)
50
°C/W
θ
JA
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
ORDERING INFORMATION
†
Device
Package
Shipping
2. Starting Tj = 25°C, L = 20 mH, I = 52 A, V = 80 V during inductor charging
AS
DD
and V = 0 V during time in avalanche.
DD
FDWS86369−F085
DFNW8
(Power56)
(Pb−Free)
3000 /
Tape & Reel
3. R
is the sum of the junction−to−case and case−to−ambient thermal
q
JA
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
is guaranteed by design while R
q
JA
q
JC
is determined by the user’s board design. The maximum rating presented
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2
here is based on mounting on a 1 in pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2021 − Rev. 3
FDWS86369−F085/D
FDWS86369−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
I
= 250 mA, V = 0 V
80
−
−
−
−
−
−
1
V
VDSS
D
GS
I
V
= 80 V, V = 0 V, T = 25°C
DS GS J
mA
mA
nA
DSS
V
DS
= 80 V, V = 0 V, T = 175°C (Note 4)
−
1
GS
J
I
Gate−to−Source Leakage Current
V
GS
=
20 V
−
100
GSS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
= V , I = 250 mA
2.0
−
3.0
5.9
4.0
7.5
V
GS(th)
DS(on)
GS
DS
D
R
Drain to Source On−Resistance
I
D
= 65 A, V = 10 V, T = 25°C
mW
GS
J
I
D
= 65 A, V = 10 V, T = 175°C (Note 4)
−
12.2
15.5
GS
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V, f = 1 MHz
−
−
−
−
2470
400
14
−
−
pF
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
R
f = 1 MHz
1.8
35
−
W
g
Q
Total Gate Charge
V
V
= 0 V to 10 V
= 0 V to 2 V
V
DD
= 64 V, I = 65 A
46
nC
g(ToT)
GS
D
Q
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
4.5
12.5
8
g(th)
GS
Q
gs
Q
gd
SWITCHING CHARACTERISTICS
t
Turn−On Time
Turn−On Delay
Rise Time
V
GS
= 40 V, I = 65 A,
−
−
−
−
−
−
−
15
11
24
8
39
−
ns
on
DD
D
V
= 10 V, R
= 6 W
GEN
t
d(on)
t
r
−
t
Turn−Off Delay
Fall Time
−
d(off)
t
f
−
t
Turn−Off Time
−
48
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode Voltage
I
= 65 A, V = 0 V
−
−
−
−
−
−
1.4
1.2
74
V
SD
SD
GS
I
= 32.5 A, V = 0 V
GS
SD
T
Reverse−Recovery Time
Reverse−Recovery Charge
I = 65 A, DI /Dt = 100 A/ms, V = 64 V
49
44
ns
rr
F
SD
DD
Q
68
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production
J
www.onsemi.com
2
FDWS86369−F085
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
1.2
1.0
V
= 10 V
GS
Current Limited
by Package
0.8
0.6
0.4
Current Limited
by Silicon
0.2
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
2
1
Duty Cycle − Descending Order
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
Notes:
Duty Factor: D = t /t
Single Pulse
1
2
Peak T = P
x Z
x R
+ T
JA C
q
q
J
DM
JA
0.01
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
V
= 10 V
T = 25°C
C
For temperatures above 25°C
derate peak current as follows:
GS
175 * TC
Ǹ
I + I25
ƪ ƫ
150
Single Pulse
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
www.onsemi.com
3
FDWS86369−F085
TYPICAL CHARACTERISTICS
500
1000
100
If R = 0
=(L)(I )/(1.3*Rated BV
t
− V
)
AV
AS
DSS
DD
If R ≠ 0
=(L/R)In[(I *R)/(1.3*Rated BV
100
t
AV
− V )+1]
DSS DD
AS
10
1
100 ms
Operation in this area may
10
be limited by R
Starting T = 25°C
1 ms
DS(on)
J
10 ms
100 ms
0.1
T
= 25°C
C
Starting T = 150°C
J
T = Max Rated
J
Single Pulse
0.01
1
1
0.001
0.01
0.1
1
10
100
0.1
10
100
500
t
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
AV
(Note: Refer to onsemi Applications Notes AN7514 and
AN7515)
Figure 6. Unclamped Inductive Switching Capability
Figure 5. Forward Bias Safe Operating Area
200
150
100
50
200
100
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 0 V
V
DD
= 5 V
10
1
T = 175°C
J
T = 25°C
J
T = 175°C
J
T = 25°C
J
T = −55°C
J
0
0.1
1.4
2
3
4
5
6
7
8
9
10
0.0
0.2
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
200
150
100
50
200
150
100
50
80 ms Pulse Width
T = 175°C
J
V
GS
V
15 V Top
10 V
8 V
7 V
6 V
GS
15 V Top
10 V
8 V
7 V
6 V
5.5 V
5 V Bottom
5.5 V
5 V Bottom
80 ms Pulse Width
T = 25°C
J
5 V
5 V
4
0
0
1
0
1
2
3
4
5
0
2
3
5
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
www.onsemi.com
4
FDWS86369−F085
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
2.2
I
D
= 65 A
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T = 175°C
J
T = 25°C
J
I
V
= 65 A
D
= 10 V
GS
−80
10
−40
0
40
80
120
160
6
7
9
200
8
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 12. Normalized RDS(on) vs. Junction
Temperature
Figure 11. RDS(on) vs. Gate Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.10
1.05
1.00
V
= V
DS
= 250 mA
GS
I
D
= 5 mA
I
D
0.95
0.90
−80
0
40
80
120
160
−80
−40
0
40
80
120
160
200
200
−40
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
10
8
10000
1000
100
10
I
D
= 65 A
V
= 32 V
DD
C
iss
V
DD
= 40 V
V
DD
= 48 V
6
C
oss
4
2
0
C
rss
f = 1 MHz
V
GS
= 0 V
1
0
15
Q , GATE CHARGE (nC)
20
25
5
10
30
35
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
g
Figure 15. Capacitance vs. Drain−to−Source
Figure 16. Gate Charge vs. Gate−to−Source
Voltage
Voltage
www.onsemi.com
5
FDWS86369−F085
PACKAGE DIMENSIONS
DFNW8 5.2x6.3, 1.27P
CASE 507AU
ISSUE A
www.onsemi.com
6
FDWS86369−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries
in the United States and/or other countries.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明