FDWS86368-F085H [ONSEMI]
N-Channel PowerTrench® MOSFET 80V, 80A, 4.5mΩ;
| 型号： | FDWS86368-F085H |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel PowerTrench® MOSFET 80V, 80A, 4.5mΩ |
| 文件： | 总7页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
DSS
R
MAX
I MAX
D
DS(ON)
80 V, 80 A, 4.5 mW
80 V
4.5 mW @ 10 V
80 A
FDWS86368-F085
ELECTRICAL CONNECTION
Features
• Typical R
• Typical Q
= 3.7 mW at V = 10 V, I = 80 A
GS D
DS(on)
= 57 nC at V = 10 V, I = 80 A
g(tot)
GS
D
• UIS Capability
• Wettable Flanks for Automatic Optical Inspection (AOI)
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
N−Channel MOSFET
Applications
• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems
Top
Bottom
D
D
D
D
G
S
S
S
Pin 1
DFNW8
CASE 507AU
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
Symbol
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Ratings
80
Units
V
DSS
V
V
A
MARKING DIAGRAM
V
GS
20
ID
Drain Current (T = 25°C)
C
Continuous (V = 10 V) (Note 1)
80
GS
(See Figure 4)
Pulsed
ON
AYWWWL
FDWS
86368
E
AS
Single Pulse Avalanche Energy
(Note 2)
82
mJ
P
Power Dissipation
214
1.43
W
D
Derate Above 25°C
W/°C
°C
A
Y
= Assembly Location
= Year
TJ, T
Operating and Storage Temperature
Thermal Resistance, Junction to Case
−55 to +175
0.7
STG
RθJC
RθJA
WW
WL
FDWS
86368
= Work Week
= Assembly Lot
= Device Code
= Device Code
°C/W
°C/W
Maximum Thermal Resistance,
Junction to Ambient (Note 3)
50
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
(Note: Microdot may be in either location)
2. Starting T = 25°C, L = 40 mH, I = 64 A, V = 80 V during inductor charging
J
AS
DD
ORDERING INFORMATION
and V = 0 V during time in avalanche.
DD
3. RθJA is the sum of the junction−to−case and case−to−ambient thermal
†
Device
Package
Shipping
resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while Rθ
JA
FDWS86368−F085
DFNW8
(Power56)
(Pb−Free)
3000 /
Tape & Reel
is determined by the board design. The maximum rating presented here is
2
based on mounting on a 1 in pad of 2 oz copper.
†For information on tape and reel specifications,
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2021 − Rev. 4
FDWS86368−F085/D
FDWS86368−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
B
VDSS
Drain−to−Source Breakdown
Voltage
I
D
= 250 mA, V = 0 V
80
V
GS
I
Drain−to−Source Leakage
V
DS
V
DS
V
GS
= 80 V, V = 0 V, T = 25°C
1
mA
mA
nA
DSS
GS
J
Current
= 80 V, V = 0 V, T = 175°C (Note 4)
1
GS
J
I
Gate−to−Source Leakage
Current
=
20 V
100
GSS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold
Voltage
V
GS
= V , I = 250 mA
2.0
3.0
4.0
V
DS
D
R
Drain to Source On Resistance
I
I
= 80 A, V = 10 V, T = 25°C
3.7
7.4
4.5
9.0
mW
DS(on)
D
GS
J
= 80 A, V = 10 V, T = 175°C (Note 4)
D
GS
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V, f = 1 MHz
4350
636
20
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
2.5
57
g
Q
Total Gate Charge
V
= 0 V to 10 V
= 0 V to 2 V
V
DD
= 64 V, I = 80 A
75
60
59
nC
nC
nC
nC
g(TOT)
GS
GS
D
Q
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
V
8
g(th)
Q
23
gs
Q
11
gd
SWITCHING CHARACTERISTICS
t
on
Turn−On Time
Turn−On Delay
Rise Time
V
DD
= 40 V, I = 80 A, V = 10V, R = 6 W
GEN
ns
ns
ns
ns
ns
ns
D
GS
t
t
23
22
32
13
d(on)
t
r
Turn−Off Delay
Fall Time
d(off)
t
f
t
off
Turn−Off Time
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode
Voltage
V
GS
V
GS
= 0 V, I = 80 A
1.25
1.2
V
SD
SD
= 0 V, I = 40 A
SD
t
Reverse−Recovery Time
Reverse−Recovery Charge
I = 80 A, DI /Dt = 100 A/ms, V = 64 V
58
49
75
67
ns
rr
F
SD
DD
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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2
FDWS86368−F085
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
175
150
125
100
75
CURRENT LIMITED
BY PACKAGE
VGS = 10V
CURRENT LIMITED
BY SILICON
50
25
0
0
25
50
75 100 125 150 175
25
50
75 100 125 150 175 200
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
0.01
t
0.1
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
0.01
PEAK T = P x Z
x R
+ T
J
DM
qJC
qJC C
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
o
T
= 25
C
C
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I = I
25
150
100
SINGLE PULSE
10
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
FDWS86368−F085
TYPICAL CHARACTERISTICS
1000
100
10
500
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
− V
)
AS
DSS
DD
0
If R
AV
0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
AS
DSS DD
100
100us
STARTING T = 25oC
OPERATION IN THIS
AREA MAY BE
J
1
10
1ms
LIMITED BY r
DS(on)
10ms
100ms
SINGLE PULSE
T
0.1
0.01
STARTING TJ = 150oC
= MAX RATED
o
J
T
C
= 25 C
1
0.001 0.01
0.1
1
10
100 1000
0.1
1
10
100
500
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to onsemi Application Notes
AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
300
300
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
10
1
250
VDD = 5V
200
150
100
50
TJ = 175 o
C
TJ = 25 oC
TJ = 175oC
T
J = 25oC
o
TJ = −55 C
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
300
250
200
150
100
50
80ms PULSE WIDTH
Tj=175oC
VGS
15V Top
10V
8V
VGS
15V Top
250
200
150
100
50
10V
8V
7V
6V
7V
6V
5.5V
5V Bottom
80ms PULSE WIDTH
Tj=25oC
5.5V
5V Bottom
5V
5V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
FDWS86368−F085
TYPICAL CHARACTERISTICS
40
30
20
10
0
2.2
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 80A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 175oC
TJ = 25oC
ID = 80A
VGS = 10V
4
5
6
7
8
9
10
−80 −40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATUREo(C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.10
VGS = V
DS
ID = 5mA
I
D
= 250mA
1.05
1.00
0.95
0.90
−80 −40
0
40
80 120 160 200
−80 −40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source Breakdown
Voltage vs. Junction Temperature
10000
10
ID = 80A
VDD =32V
Ciss
8
6
4
2
0
1000
100
10
VDD = 40V
VDD = 48V
Coss
Crss
f = 1MHz
GS = 0V
V
1
0.1
1
10
100
0
10
20
30
40
50
60
Qg, GATE CHARGE(nC)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Single Pulse Maximum Power
Dissipation
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5
FDWS86368−F085
PACKAGE DIMENSIONS
DFNW8 5.2x6.3, 1.27P
CASE 507AU
ISSUE A
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6
FDWS86368−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries
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