FGP10N60UNDF [FAIRCHILD]
600V, 10A Short Circuit Rated IGBT; 600V ，10A短路额定IGBT
| 型号： | FGP10N60UNDF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, 10A Short Circuit Rated IGBT |
| 文件： | 总9页 (文件大小：819K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2012
FGP10N60UNDF
600V, 10A
Short Circuit Rated IGBT
Applications
•
Home appliance inverter-driven appplication
- Air Conditioner, Washing Machine, Refrigerator,
Dish Washer
Features
•
Industrial Inverter - Sewing Machine, CNC
•
•
•
•
•
Short circuit rated 10us
High current capability
High input impedance
Fast switching
General Description
RoHS compliant
Using advanced NPT IGBT Technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low power inverter-
driven applications where low-losses and short circuit rugged-
ness feature are essential.
C
G
G C E
TO-220
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
V
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
CES
GES
± 20
V
o
@ T = 25 C
20
A
C
I
C
o
Collector Current
@ T = 100 C
10
A
C
o
I
I
Pulsed Collector Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T = 25 C
30
10
A
CM (1)
C
o
@ T = 25 C
A
F
C
o
@ T = 25 C
139
W
W
C
P
D
o
@ T = 100 C
56
C
o
T
-55 to +150
-55 to +150
C
J
o
T
C
stg
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Typ.
Max.
Units
o
R
R
R
(IGBT)
-
-
-
0.9
3.5
C/W
θJC
θJC
θJA
o
(Diode)
C/W
o
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
62.5
C/W
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev.A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Packaging
Type
Max Qty
per Box
Device Marking
Device
Package
Qty per Tube
FGP10N60UNDF
FGP10N60UNDF
TO220
Tube
50ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
V
V
V
= 0V, I = 250ꢀA
600
-
-
-
-
1
V
CES
CES
GES
GE
CE
GE
C
I
I
= V
, V = 0V
-
-
mA
uA
CES
GES
GE
G-E Leakage Current
= V
, V = 0V
±10
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 10mA, V = V
GE
5.5
-
6.8
2
8.5
V
V
GE(th)
C
C
C
CE
= 10A, V = 15V
2.45
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 10A, V = 15V,
GE
-
2.3
-
V
o
T
= 125 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
517
65
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
20
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
6.3
ns
ns
d(on)
r
Turn-Off Delay Time
Fall Time
52.2
19.1
0.15
0.05
0.2
ns
d(off)
f
V
R
= 400V, I = 10A,
= 10ꢁ, V = 15V,
GE
CC C
G
24.8
ns
o
Inductive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
on
off
ts
t
t
t
t
8.1
d(on)
r
7.3
ns
Turn-Off Delay Time
Fall Time
55.1
34.2
0.22
0.08
0.3
ns
d(off)
f
V
= 400V, I = 10A,
= 10ꢁ, V = 15V,
GE
CC C
R
G
ns
o
Inductive Load, T = 125 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
on
off
ts
V
= 350V,
CC
T
Short Circuit Withstand Time
R
T
= 100ꢁ, V = 15V,
= 150 C
10
-
-
ꢀs
sc
G
C
GE
o
2
www.fairchildsemi.com
FGP10N60UNDF Rev.A
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
37
Max Units
Q
Q
Q
Total Gate Charge
-
-
-
nC
nC
nC
g
V
V
= 400V, I = 10A,
C
= 15V
CE
GE
Gate to Emitter Charge
Gate to Collector Charge
5
ge
gc
21
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.8
Max Units
o
T
T
T
T
= 25 C
-
-
-
-
-
-
2.2
V
C
C
C
C
C
C
V
Diode Forward Voltage
I = 10A
F
FM
o
= 125 C
1.7
o
= 25 C
37.7
78.9
75
t
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
rr
o
= 125 C
I = 10A, dI /dt = 200A/ꢀs
F
F
o
T
T
= 25 C
Q
nC
rr
o
= 125 C
221
3
www.fairchildsemi.com
FGP10N60UNDF Rev.A
TTypical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
80
80
TC = 25oC
20V
TC = 125oC
20V
17V
15V
17V
70
60
50
40
30
20
10
0
70
15V
60
50
VGE =12V
40
VGE = 12V
30
20
10
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
VGE = 15V
TC = 25oC
Common Emitter
VCE = 20V
TC = 25oC
50
50
TC = 125oC
TC = 125oC
40
40
30
20
10
0
30
20
10
0
0
1
2
3
4
5
6
0
3
6
9
12
15
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
TC = 25oC
Common Emitter
VGE = 15V
16
20A
12
10A
8
IC = 5A
10A
4
20A
IC = 5A
0
25
50
75
100
125
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGP10N60UNDF Rev.A
Typical Performance Characteristics
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
3000
Common Emitter
TC = 125oC
Cies
Coes
Cres
1000
100
10
16
12
8
10A
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
20A
4
IC = 5A
0
4
8
12
16
20
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
100
15
200V
10ꢀs
12
10
VCC = 100V
400V
100ꢀs
9
6
3
0
1ms
1
10 ms
DC
Single Nonrepetitive
o
Pulse T = 25 C
C
Curves must be derated
linearly with increase
in temperature
0.1
Common Emitter
TC = 25oC
0.01
1
10
100
1000
0
5
10 15 20 25 30 35 40 45 50
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
50
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
TC = 25oC
TC = 125oC
tr
td(off)
td(on)
10
100
Common Emitter
VCC = 400V, VGE = 15V
tf
IC = 10A
TC = 25oC
TC = 125oC
10
1
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Gate Resistance, RG [ꢁ]
Gate Resistance, RG [ꢁ]
5
www.fairchildsemi.com
FGP10N60UNDF Rev.A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 14. Turn-off Characteristics vs.
Collector Current
Collector Current
30
300
Common Emitter
VGE = 15V, RG = 10ꢁ
TC = 25oC
TC = 125oC
100
10
td(off)
td(on)
Common Emitter
tr
tf
VGE = 15V, RG = 10ꢁ
TC = 25oC
TC = 125oC
10
1
5
0
5
10
15
20
25
0
5
10
15
20
25
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
CollectorCurrent
1000
1000
Eon
Eon
Eoff
100
Eoff
100
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10ꢁ
TC = 25oC
TC = 125oC
IC = 10A
TC = 25oC
TC = 125oC
10
5
10
0
10
20
30
40
50
60
0
5
10
15
20
25
Gate Resistance, RG [ꢁ]
Collector Current, IC [A]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
30
50
10
10
TJ = 125oC
TJ = 75oC
TJ = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
1
10
100
1000
0
1
2
3
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGP10N60UNDF Rev.A
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
100
0.3
TC = 25oC
TC = 125oC
TJ = 125oC
10
200A/ꢀs
0.2
TJ = 75oC
1
di/dt = 100A/ꢀs
200A/ꢀs
0.1
0.1
0.0
TJ = 25oC
0.01
di/dt = 100A/ꢀs
1E-3
50
200
400
600
0
2
4
6
8
10
12
Reverse Voltage, VR [V]
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
100
TC = 25oC
di/dt = 100A/ꢀs
TC = 125oC
80
60
40
20
0
200A/ꢀs
di/dt = 100A/ꢀs
200A/ꢀs
0
2
4
6
8
10
12
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
0.01
Peak Tj = Pdm x Zthjc + TC
0.1
0.005
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration [sec]
7
www.fairchildsemi.com
FGP10N60UNDF Rev.A
Mechanical Dimensions
TO-220
8
www.fairchildsemi.com
FGP10N60UNDF Rev.A
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
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make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
9
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FGP10N60UNDF Rev.A
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