FJA4310O [FAIRCHILD]
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;
| 型号： | FJA4310O |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总5页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJA4310
Audio Power Amplifier
•
•
•
•
High Current Capability : I =10A
High Power Dissipation
Wide S.O.A
C
Complement to FJA4210
TO-3P
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
200
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
V
V
CBO
140
CEO
EBO
6
V
I
I
10
A
C
1.5
A
B
P
Collector Dissipation (T =25°C)
100
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
I =5mA, I =0
200
140
6
CBO
CEO
EBO
C
E
BV
BV
Collector-Emitter Breakdown Voltage I =50mA, R =∞
V
C
BE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
I =5mA, I =0
V
E
C
I
I
V
=200V, I =0
10
10
µA
µA
CBO
EBO
CB
EB
CE
E
V
V
=6V, I =0
C
h
* DC Current Gain
=4V, I =3A
50
180
0.5
FE
C
V
(sat)
Collector-Emitter Saturation Voltage
Output Capacitance
I =5A, I =0.5A
V
CE
C
B
C
V
=10V, f=1MHz
250
30
pF
ob
CB
CE
f
Current Gain Bandwidth Product
V
=5V, I =1A
MHz
T
C
* Pulse Test : PW=20µs
h
Classification
FE
Classification
R
O
Y
h
50 ~ 100
70 ~ 140
90 ~ 180
FE
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
Typical Characteristics
IB = 300mA IB = 250mA
1000
100
10
10
IB = 200mA
IB = 150mA
IB = 400mA
VCE = 4 V
9
8
7
6
5
4
3
2
1
0
Ta = 25 o
C
IB = 100mA
Ta = 125 o
C
Ta = - 25 o
C
IB = 50mA
IB = 20mA
0.1
1
10
0
1
2
3
4
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
IC = 10 IB
Ta = 125 o
C
0.1
Ta = 25 o
C
Ta = - 25 o
C
IC= - 10A
IC= - 5A
0.01
0.01
0.0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
IB [A], BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. V (sat) vs. I Characteristics
Figure 4. Collector-Emitter Saturation Voltage
CE
B
10
8
t=10ms
VCE = 4 V
IC (Pulse)
10
IC (DC)
t=100ms
6
Ta = 25 o
C
1
4
2
Ta = 125 o
C
T
= 25oC
SCingle Pulse
Ta = - 25 o
C
0.1
0
0.0
10
100
0.5
1.0
1.5
VCE [V], COLLECTOR-EMITTER VOLTAGE
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
Typical Characteristics (Continued)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
Package Demensions
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7
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