FJI5603D [FAIRCHILD]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | FJI5603D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Silicon Transistor |
| 文件： | 总7页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2008
FJI5603D
NPN Silicon Transistor
Applications
Equivalent Circuit
C
•
•
High Voltage and High Speed Power Switch Application
Electronic Ballast Application
Features
B
•
•
•
Wide Safe Operating Area
Small Variance in Storage Time
Built-in Free Wheeling Diode
I2-PAK
1.Base 2.Collector 3.Emitter
1
E
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
V
BVCBO
BVCEO
BVEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)**
Base Current
1600
800
V
12
V
3
A
ICP
6
A
IB
2
A
IBP
Base Current(Pulse)**
Power Dissipation(TC=25°C)
Junction Temperature
4
100
A
PD
W
°C
°C
mJ
TJ
150
TSTG
EAS
Storage Junction Temperature Range
- 65 ~ +150
3.5
Avalanche Energy(Tj=25°C, 8mH)
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10%
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Ratings
1.25
Units
°C/W
Rθjc
Rθja
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
80
°C/W
* Device mounted on minimum pad size
Ordering Information
Part Number
Marking
Package
Packing Method
Remarks
FJI5603DTU
J5603D
I2PAK
TUBE
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
1
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICES
Parameter
Test Condition
Min. Typ. Max. Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IC=0.5mA, IE=0
1600
800
12
1689
870
V
V
IC=5mA, IB=0
IE=0.5mA, IC=0
14.8
0.01
V
VCES=1600V,
IE=0
TC=25°C
TC=125°C
TC=25°C
TC=125°C
100
1000
100
1000
500
35
µA
ICEO
Collector Cut-off Current
VCE=800V,
VBE=0
0.01
µA
µA
IEBO
hFE
Emitter Cut-off Current
DC Current Gain
VEB=12V, IC=0
0.05
29
VCE=3V,
IC=0.4A
TC=25°C
TC=125°C
TC=25°C
TC=125°C
20
6
15
VCE=10V, IC=5mA
20
20
43
46
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=250mA, IB=25mA TC=25°C
IC=500mA, IB=50mA TC=25°C
0.5
1.5
1.2
0.74
0.61
0.85
0.74
745
56
1.25
2.5
V
V
V
V
IC=1A, IB=0.2A
TC=25°C
2.5
IC=500mA, IB=50mA TC=25°C
TC=125°C
1.2
1.1
IC=2A, IB=0.4A
TC=25°C
1.2
V
TC=125°C
1.1
Cib
Cob
fT
Input Capacitance
VEB=10V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.1A,VCE=10V
IF=0.4A
1000
500
pF
pF
MHz
V
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
5
VF
0.76
0.83
1.2
1.5
IF=1A
V
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤10%
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
2
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition
Min
Typ. Max. Units
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs)
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
IC=0.3A, IB1=50mA IB2=150mA
CC=125V
RL = 416Ω
400
2.1
600
2.3
ns
µs
ns
ns
µs
ns
V
1.9
310
600
1.3
1000
1100
1.5
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
IC=0.5A, IB1=50mA, IB2=250mA
VCC=125V, RL = 250Ω
180
350
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
tF
Storage Time
Fall Time
IC=0.3A, IB1=50mAIB2=150mA,
Vz=300V, LC=200H
0.8
0.8
-
1.2
250
250
1.2
µs
ns
ns
µs
ns
ns
170
180
-
tC
Cross-over Time
Storage Time
Fall Time
tSTG
tF
IC=0.5A, IB1=50mA, IB2=250mA,
Vz=300V, LC=200H
140
170
175
200
tC
Cross-over Time
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
3
Typical Characteristics
3
1A
VCE=10V
900mA
800mA
100
10
1
700mA
600mA
500mA
TJ=125oC
TJ=25oC
2
1
0
400mA
300mA
200mA
IB=100mA
1
10
100
1000
0
1
2
3
4
5
6
7
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
VCE[V], COLLECTOR EMITTER VOLTAGE
Figure 1. Static Characteristic
IC=5IB
IC=5IB
10
1
TJ=25oC
1
TJ=125oC
TJ=125oC
0.1
0.01
TJ=25oC
0.1
1
10
100
1000
1
10
100
1k
IC(mA), COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
2
TJ=25oC
1000
F=1MHz
C
3.0A
ib
2.0A
1.0A
100
1
0.4A
IC=0.2A
Cob
10
0
1
10
100
1k
1
1
10
100
IB[mA], BASE CURRENT
REVERSE VOLTAGE[V]
Figure 6. Capacitance
Figure 5. Typical Collector Saturation Voltage
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
4
Typical Characteristics (Continued)
5
1000
900
4.5
800
IC=6IB1=2IB2
VCC=125V
PW=20us
IC=6IB1=2IB2
VCC=125V
PW=20us
4
700
3.5
600
500
3
400
TJ=125oC
TJ=125oC
2.5
300
2
200
TJ=25oC
TJ=25oC
1.5
1
0.3
100
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 7. Resistive Switching Time, ton
Figure 8. Resistive Switching Time, toff
10
1000
9
8
900
IC=10IB1=5IB2
VCC=125V
PW=20us
IC=10IB1=5IB2
VCC=125V
PW=20us
800
7
6
700
TJ=125oC
5
4
600
TJ=125oC
500
400
3
2
TJ=25oC
300
TJ=25oC
1
0.3
200
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Resistive Switching Time, ton
Figure 10. Resistive Switching Time, toff
4
6
IC=6IB1=2IB2
VCC=15V
VZ=300V
IC=10IB1=2IB2
VCC=15V
VZ=300V
5
4
TJ=125oC
3
LC=200uH
LC=200uH
TJ=125oC
3
2
2
TJ=25oC
TJ=25oC
1
0.3
1
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5
0.6 0.7 0.8 0.9
1
2
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 11. Inductive Switching Time, tSTG
Figure 12. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
5
Typical Characteristics (Continued)
400
800
700
IC=6IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
IC=10IB1=2IB2
VCC=15V
VZ=300V
300
600
500
TJ=25oC
LC=200uH
200
400
300
TJ=25oC
100
90
200
80
70
TJ=125oC
60
50
40
100
90
TJ=125oC
80
70
30
60
20
0.3
50
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5
0.6 0.7 0.8 0.9
1
2
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 13. Inductive Switching Time, tF
Figure 14. Inductive Switching Time, tF
500
2000
IC=6IB1=2IB2
VCC=15V
IC=10IB1=2IB2
VCC=15V
TJ=125oC
400
VZ=300V
LC=200uH
VZ=300V
LC=200uH
1000
900
800
300
700
600
TJ=25oC
500
400
200
300
200
TJ=25oC
TJ=125oC
100
0.3
100
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5
0.6 0.7 0.8 0.9
1
2
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tc
Figure 16. Inductive Switching Time, tc
100
50
0
0
50
100
150
200
TC(oC), CASE TEMPERATURE
Figure 17. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
6
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
7
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