FJL4215OTU [ROCHESTER]
17A, 250V, PNP, Si, POWER TRANSISTOR, TO-264AA, TO-264, 3 PIN;
| 型号： | FJL4215OTU |
| 厂家： | 
Rochester Electronics |
| 描述： | 17A, 250V, PNP, Si, POWER TRANSISTOR, TO-264AA, TO-264, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总7页 (文件大小：1243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
•
•
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: IC = -17A.
High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5200/FJL4315.
Full thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
TO-264
1.Base 2.Collector 3.Emitter
1
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-250
-250
-5
Units
BVCBO
BVCEO
BVEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
A
A
-17
IB
Base Current
-1.5
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
150
1.04
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
0.83
°C/W
* Device mounted on minimum pad size
h
Classification
FE
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
1
Electrical Characteristics* T =25°C unless otherwise noted
a
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=-5mA, IE=0
Min. Typ. Max. Units
-250
-250
-5
V
V
IC=-10mA, RBE=∞
IE=-5mA, IC=0
V
VCB=-230V, IE=0
VEB=-5V, IC=0
-5.0
-5.0
160
µA
µA
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V, IC=-1A
VCB=-10V, f=1MHz
55
35
hFE2
DC Current Gain
60
-0.4
-1.0
30
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-3.0
-1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Cob
360
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
2SA1943RTU
2SA1943OTU
FJL4215RTU
FJL4215OTU
Marking
A1943R
A1943O
J4215R
Package
TO-264
Packing Method
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
TUBE
TUBE
TUBE
TUBE
TO-264
TO-264
J4215O
TO-264
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
2
Typical Characteristics
-20
IB = -900mA
IB = -800mA
IB = -1A
VCE = -5V
Tj = 125oC
-18
-16
-14
-12
-10
-8
IB = -700mA
Tj = 25oC
100
10
1
IB = -300mA
Tj = -25oC
IB = -200mA
IB = -100mA
-6
-4
-2
-0
-2
-4
-6
-8
-10
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R Grade )
10000
1000
100
Tj = 125oC
Ic=-10Ib
Tj = 25oC
VCE = -5V
100
10
1
Tj = -25oC
Tj=25oC
Tj=125oC
Tj=-25oC
10
0.1
0.1
1
10
1
10
IC[A], COLLECTOR CURRENT
Ic[A], COLLECTORCURRENT
Figure 3. DC current Gain ( O Grade )
Figure 4. Collector-Emitter Saturation Voltage
14
10000
1000
100
Ic=-10Ib
12
VCE = 5V
10
8
Tj=-25oC
Tj=25oC
6
4
Tj=125oC
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.1
1
10
VBE[V], BASE-EMITTER VOLTAGE
Ic[A], COLLECTORCURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
3
Typical Characteristics
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IC MAX. (Pulsed*)
IC MAX. (DC)
10ms*
100ms*
DC
1
0.1
0.01
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
1
10
100
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
Pulse duration [sec]
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Thermal Resistance
Figure 8. Safe Operating Area
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 9. Power Derating
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
4
Package Dimensions
TO-264
20.00 0.20
(8.30) (8.30)
(2.00)
(1.00)
(R2.00)
(0.50)
ø3.30
0.20
(R1.00)
(7.00)
(7.00)
4.90 0.20
(1.50)
(1.50)
(1.50)
2.50 0.20
3.00 0.20
+0.25
1.00
–0.10
+0.25
–0.10
0.60
2.80 0.30
5.45TYP
5.45TYP
[5.45 0.30
]
[5.45 0.30]
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
5
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
6
相关型号：
FJL4215OTU_NL
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-264, 3 PIN
FAIRCHILD
FJL4215R
Power Bipolar Transistor, 13A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN
FAIRCHILD
FJL4315O
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN
FAIRCHILD
FJL4315OTU_NL
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-264, 3 PIN
FAIRCHILD
FJL4315R
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN
FAIRCHILD
FJL6820TU
Power Bipolar Transistor, 20A I(C), 750V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明