FJI5603DTU [ONSEMI]
NPN芯片晶体管;
| 型号： | FJI5603DTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN芯片晶体管 晶体管 |
| 文件： | 总9页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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January 2016
FJI5603D
NPN Silicon Transistor
Applications
• High Voltage and High Speed Power Switch Application
• Electronic Ballast Application
Equivalent Circuit
C
Features
B
• Wide Safe Operating Area
• Small Variance in Storage Time
• Built-in Free Wheeling Diode
I2-PAK
1
E
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
FJI5603DTU
J5603D
TO-262 3L (I2PAK)
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
1600
Collector-Emitter Voltage
Emitter-Base Voltage
800
V
12
V
Collector Current (DC)
3
A
ICP
Collector Current (Pulse)(1)
6
A
IB
Base Current (DC)
2
A
IBP
Base Current (Pulse)(1)
4
100
A
PC
Power Dissipation (TC = 25°C)
Junction Temperature
W
°C
°C
mJ
TJ
150
TSTG
EAS
Storage Junction Temperature Range
Avalanche Energy (TJ = 25°C, 8 mH)
-65 to +150
3.5
Notes:
1. Pulse test: pulse width = 5 ms, duty cycle < 10%
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. 1.1
www.fairchildsemi.com
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
RθJC
Parameter
Rating
1.25
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
80
Note:
2. Device mounted on minimum pad size.
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IC = 0.5 mA, IE = 0
Min. Typ. Max. Unit
Collector-Base Breakdown
Voltage
BVCBO
1600
800
1689
870
V
V
V
Collector-Emitter
Breakdown Voltage
BVCEO
BVEBO
IC = 5 mA, IB = 0
Emitter-Base Breakdown
Voltage
IE = 0.5 mA, IC = 0
12.0
14.8
0.01
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
100
1000
100
1000
500
35
ICES
Collector Cut-Off Current
VCE = 1600 V, VBE = 0
μA
0.01
ICEO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCE = 800 V, IB = 0
VEB = 12 V, IC = 0
μA
μA
0.05
29
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
20
6
VCE = 3 V, IC = 0.4 A
15
hFE
DC Current Gain
20
20
43
VCE = 10 V, IC = 5 mA
46
IC = 250 mA, IB = 25 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 0.2 A
0.50
1.50
1.20
0.74
0.61
0.85
0.74
745
56
1.25
2.50
2.50
1.20
1.10
1.20
1.10
1000
500
Collector-Emitter Saturation
Voltage
VCE(sat)
VBE(sat)
V
V
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
IC = 500 mA, IB = 50 mA
IC = 2 A, IB = 0.4 A
Base-Emitter Saturation
Voltage
Cib
Input Capacitance
Output Capacitance
VEB = 10 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = 0, f = 1 MHz
pF
pF
Cob
Current Gain Bandwidth
Product
fT
IC = 0.1 A,VCE = 10 V
5
MHz
V
IF = 0.4 A
IF = 1 A
0.76
0.83
1.20
1.50
VF
Diode Forward Voltage
Note:
3. Pulse test: pulse width = 20 μs, duty cycle ≤ 10%.
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. 1.1
www.fairchildsemi.com
2
Electrical Characteristics (Continued)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width = 20 μs)
tON
tSTG
tF
Turn-On Time
Storage Time
Fall Time
400
2.1
600
2.3
ns
μs
ns
ns
μs
ns
IC = 0.3 A, IB1 = 50 mA,
IB2 = 150 A, VCC = 125 V,
RL = 416 Ω
1.9
310
600
1.3
1000
1100
1.5
tON
tSTG
tF
Turn-On Time
Storage Time
Fall Time
IC = 0.5 A, IB1 = 50 mA,
IB2 = 250 mA, VCC = 125 V,
RL = 250 Ω
180
350
INDUCTIVE LOAD SWITCHING (VCC = 15 V)
tSTG
tF
Storage Time
Fall Time
0.8
0.8
1.2
250
250
1.2
μs
ns
ns
μs
ns
ns
IC = 0.3 A, IB1 = 50 mA,
IB2 = 150 mA, VZ = 300 V,
LC = 200 H
170
180
tC
Cross-Over Time
Storage Time
Fall Time
tSTG
tF
IC = 0.5 A, IB1 = 50 mA,
IB2 = 250 mA, VZ = 300 V,
LC = 200 H
140
170
175
200
tC
Cross-Over Time
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. 1.1
www.fairchildsemi.com
3
Typical Performance Characteristics
3
1A
VCE=10V
900mA
800mA
100
10
1
700mA
600mA
500mA
TJ=125oC
TJ=25oC
2
400mA
300mA
200mA
IB=100mA
1
0
1
10
100
1000
0
1
2
3
4
5
6
7
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
IC=5IB
IC=5IB
10
1
TJ=25oC
1
TJ=125oC
TJ=125oC
0.1
0.01
TJ=25oC
0.1
1
10
100
1000
1
10
100
1k
IC(mA), COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
2
TJ=25oC
1000
F=1MHz
C
ib
3.0A
2.0A
100
1.0A
1
0.4A
IC=0.2A
Cob
10
0
1
1
10
100
1k
1
10
100
IB[mA], BASE CURRENT
REVERSE VOLTAGE[V]
Figure 6. Capacitance
Figure 5. Typical Collector Saturation Voltage
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. 1.1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
5
1000
900
4.5
800
IC=6IB1=2IB2
VCC=125V
PW=20us
IC=6IB1=2IB2
VCC=125V
PW=20us
4
700
3.5
600
500
3
400
TJ=125oC
TJ=125oC
2.5
300
2
200
TJ=25oC
TJ=25oC
1.5
1
0.3
100
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 7. Resistive Switching Time, ton
Figure 8. Resistive Switching Time, toff
10
9
1000
900
8
IC=10IB1=5IB2
VCC=125V
IC=10IB1=5IB2
VCC=125V
800
7
PW=20us
PW=20us
6
5
700
TJ=125oC
600
4
3
TJ=125oC
500
400
2
TJ=25oC
300
TJ=25oC
1
0.3
200
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Resistive Switching Time, ton
Figure 10. Resistive Switching Time, toff
4
6
IC=6IB1=2IB2
VCC=15V
VZ=300V
IC=10IB1=2IB2
VCC=15V
VZ=300V
5
4
TJ=125oC
3
LC=200uH
LC=200uH
TJ=125oC
3
2
2
TJ=25oC
TJ=25oC
1
0.3
1
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5
0.6 0.7 0.8 0.9
1
2
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 11. Inductive Switching Time, tSTG
Figure 12. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. 1.1
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
400
800
700
IC=6IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
IC=10IB1=2IB2
VCC=15V
VZ=300V
300
600
500
TJ=25oC
LC=200uH
200
400
300
TJ=25oC
100
90
200
80
70
TJ=125oC
60
50
40
100
90
TJ=125oC
80
70
30
60
20
0.3
50
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5
0.6 0.7 0.8 0.9
1
2
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 13. Inductive Switching Time, tF
Figure 14. Inductive Switching Time, tF
2000
500
IC=10IB1=2IB2
VCC=15V
IC=6IB1=2IB2
VCC=15V
TJ=125oC
400
VZ=300V
LC=200uH
900
VZ=300V
LC=200uH
1000
800
300
700
600
500
TJ=25oC
400
300
200
TJ=25oC
TJ=125oC
200
100
0.3
100
0.3
0.4
0.5
0.6 0.7 0.8 0.9
1
2
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tc
Figure 16. Inductive Switching Time, tc
100
50
0
0
50
100
150
200
TC(oC), CASE TEMPERATURE
Figure 17. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. 1.1
www.fairchildsemi.com
6
10.29
9.65
A
4.83
4.06
B
8.33
6.22
1.40
1.14
1.40
1.00
7°
7.88
6.86
9.65
8.64
5°
5°
2
1
3
3.96
2.80
B
2.13
14.73
12.70
2.79
2.03
1.78
1.14
SEE NOTE "G"
B
0.64
0.33
B
2.54
0.90
0.64
B
5.08
M
0.254 A
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
TO262 JEDEC VARIATION AA.
B
DOES NOT COMPLY JEDEC STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ANSI
Y14.5-1994.
F. LOCATION OF PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF PACKAGE)
G. MAXIMUM WIDTH FOR F102 DEVICE = 1.35 MAX.
H. DRAWING FILE NAME: TO262A03REV6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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