FJP3305R [FAIRCHILD]

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
FJP3305R
型号: FJP3305R
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

开关 高压
文件: 总5页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FJP3305  
High Voltage Switch Mode Application  
High Speed Switching  
Suitable for Electronic Ballast and Switching Regulator  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
700  
V
V
CBO  
CEO  
EBO  
400  
9
V
I
I
I
4
A
C
8
A
CP  
B
2
75  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
I =500µA, I =0  
Min.  
Typ.  
Max.  
Units  
V
BV  
700  
400  
9
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
V
C
B
I =500µA, I =0  
V
E
C
I
I
V
=700V, I =0  
1
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
=9V, I =0  
1
C
h
h
*
DC Current Gain  
=5V, I =1A  
19  
8
35  
40  
0.5  
0.6  
1
FE1  
FE2  
C
=5V, I =2A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =1A, I =0.2A  
V
V
CE  
BE  
C
B
I =2A, I =0.5A  
C
B
I =4A, I =1A  
V
C
B
V
(sat)  
I =1A, I =0.2A  
1.2  
1.6  
V
C
B
I =2A, I =0.5A  
V
C
B
f
Current Gain Bandwidth Product  
Output Capacitance  
Turn On Time  
V
=5V, I =1A  
4
MHz  
pF  
µs  
µs  
µs  
T
CE  
CB  
CC  
C
C
V
V
=10V, f=1MHz  
65  
ob  
t
t
t
=125V,  
0.8  
4
ON  
I =2A=5I =-5I  
Storage Time  
C
B1  
B2  
STG  
R =62.5Ω  
L
Fall Time  
0.9  
F
* Pulse test: PW300µs, Duty Cycle2%  
h
Classification  
FE  
Classification  
R
O
h
19 ~ 28  
26 ~ 35  
FE2  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  
Typical Characteristics  
5.0  
4.5  
4.0  
100  
10  
1
VCE = 5V  
Ta = 125 O  
Ta = 75 O  
C
IB = 300mA  
C
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Ta = - 25 O  
C
Ta = 25 O  
C
IB = 100mA  
IB = 50mA  
0
1
2
3
4
5
6
7
8
9
10  
10  
10  
0.01  
0.1  
1
10  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
IC [A], COLLECTOR CUTRRENT  
Figure 1. Static Characteristics  
Figure 2. DC Current Gain(R-Grade)  
100  
10  
1
10  
VCE = 5V  
IC = 4 IB  
Ta = 75 O  
C
Ta = 125 O  
C
Ta = 125 O  
C
1
Ta = - 25 O  
C
Ta = 25 O  
C
Ta = 75 O  
C
Ta = - 25 O  
Ta = 25 O  
C
0.1  
C
0.01  
0.01  
0.01  
0.1  
1
0.1  
1
10  
IC [A], COLLECTOR CUTRRENT  
IC [A], COLLECTOR CURRENT  
Figure 3. DC Current Gain(O-Grade)  
Figure 4. Saturation Voltage(R-Grade)  
10  
10  
IC = 4 IB  
IC = 4 IB  
Ta = 125 O  
C
Ta = 25 O  
C
1
1
Ta = - 25 O  
C
Ta = 125 O  
C
Ta = 75 O  
C
Ta = 75 O  
C
Ta = - 25 O  
Ta = 25 O  
C
0.1  
0.1  
C
0.01  
0.01  
0.01  
0.01  
0.1  
1
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 5. Saturation Voltage(O-Grade)  
Figure 6. Saturation Voltage(R-Grade)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  
Typical Characteristics (Continued)  
10  
10  
IC = 4 IB  
tSTG  
Ta = 25 O  
C
Ta = - 25 O  
C
1
1
Ta = 125 O  
C
Ta = 75 O  
C
tF  
0.1  
0.1  
IB1 = - IB2 = 0.4A  
VCC = 125V  
0.01  
0.01  
0.01  
0.1  
0.1  
1
10  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 7. Saturation Voltage(O-Grade)  
Figure 8. Switching Time  
10  
100  
10  
IC (Pulse)  
1ms  
5ms  
500µs  
IC (DC)  
1
0.1  
0.01  
IB1=2A, RB2=0  
TC = 25OC  
Single Pulse  
VCC=50V, L=1mH  
1
10  
100  
1000  
1
10  
100  
1000  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 9. Reverse Biased Safe Operating Area  
Figure 10. Forward Biased Safe Operating Area  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
Tc[oC], CASE TEMPERATURE  
Figure 11. Power Derating  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  
Package Dimensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
PACMAN™  
POP™  
Power247™  
PowerSaver™  
PowerTrench  
QFET  
SPM™  
Stealth™  
ImpliedDisconnect™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
OPTOLOGIC  
OPTOPLANAR™  
FACT Quiet Series™  
FAST  
FASTr™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
QS™  
QT Optoelectronics™ TinyLogic  
HiSeC™  
I2C™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
TINYOPTO™  
TruTranslation™  
UHC™  
i-Lo™  
Across the board. Around the world.™  
The Power Franchise  
ProgrammableActive Droop™  
SILENT SWITCHER UltraFET  
SMART START™  
VCX™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY  
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY  
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT  
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I10  

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