FJP3305R [FAIRCHILD]
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;型号: | FJP3305R |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 开关 高压 |
文件: | 总5页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJP3305
High Voltage Switch Mode Application
•
•
High Speed Switching
Suitable for Electronic Ballast and Switching Regulator
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
700
V
V
CBO
CEO
EBO
400
9
V
I
I
I
4
A
C
8
A
CP
B
2
75
A
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
I =500µA, I =0
Min.
Typ.
Max.
Units
V
BV
700
400
9
CBO
CEO
EBO
C
E
BV
BV
I =5mA, I =0
V
C
B
I =500µA, I =0
V
E
C
I
I
V
=700V, I =0
1
µA
µA
CBO
EBO
CB
EB
CE
CE
E
Emitter Cut-off Current
V
V
V
=9V, I =0
1
C
h
h
*
DC Current Gain
=5V, I =1A
19
8
35
40
0.5
0.6
1
FE1
FE2
C
=5V, I =2A
C
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I =1A, I =0.2A
V
V
CE
BE
C
B
I =2A, I =0.5A
C
B
I =4A, I =1A
V
C
B
V
(sat)
I =1A, I =0.2A
1.2
1.6
V
C
B
I =2A, I =0.5A
V
C
B
f
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
V
=5V, I =1A
4
MHz
pF
µs
µs
µs
T
CE
CB
CC
C
C
V
V
=10V, f=1MHz
65
ob
t
t
t
=125V,
0.8
4
ON
I =2A=5I =-5I
Storage Time
C
B1
B2
STG
R =62.5Ω
L
Fall Time
0.9
F
* Pulse test: PW≤300µs, Duty Cycle≤2%
h
Classification
FE
Classification
R
O
h
19 ~ 28
26 ~ 35
FE2
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Typical Characteristics
5.0
4.5
4.0
100
10
1
VCE = 5V
Ta = 125 O
Ta = 75 O
C
IB = 300mA
C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta = - 25 O
C
Ta = 25 O
C
IB = 100mA
IB = 50mA
0
1
2
3
4
5
6
7
8
9
10
10
10
0.01
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CUTRRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain(R-Grade)
100
10
1
10
VCE = 5V
IC = 4 IB
Ta = 75 O
C
Ta = 125 O
C
Ta = 125 O
C
1
Ta = - 25 O
C
Ta = 25 O
C
Ta = 75 O
C
Ta = - 25 O
Ta = 25 O
C
0.1
C
0.01
0.01
0.01
0.1
1
0.1
1
10
IC [A], COLLECTOR CUTRRENT
IC [A], COLLECTOR CURRENT
Figure 3. DC Current Gain(O-Grade)
Figure 4. Saturation Voltage(R-Grade)
10
10
IC = 4 IB
IC = 4 IB
Ta = 125 O
C
Ta = 25 O
C
1
1
Ta = - 25 O
C
Ta = 125 O
C
Ta = 75 O
C
Ta = 75 O
C
Ta = - 25 O
Ta = 25 O
C
0.1
0.1
C
0.01
0.01
0.01
0.01
0.1
1
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Saturation Voltage(O-Grade)
Figure 6. Saturation Voltage(R-Grade)
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Typical Characteristics (Continued)
10
10
IC = 4 IB
tSTG
Ta = 25 O
C
Ta = - 25 O
C
1
1
Ta = 125 O
C
Ta = 75 O
C
tF
0.1
0.1
IB1 = - IB2 = 0.4A
VCC = 125V
0.01
0.01
0.01
0.1
0.1
1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Saturation Voltage(O-Grade)
Figure 8. Switching Time
10
100
10
IC (Pulse)
1ms
5ms
500µs
IC (DC)
1
0.1
0.01
IB1=2A, RB2=0
TC = 25OC
Single Pulse
VCC=50V, L=1mH
1
10
100
1000
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Biased Safe Operating Area
Figure 10. Forward Biased Safe Operating Area
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Tc[oC], CASE TEMPERATURE
Figure 11. Power Derating
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Package Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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FACT™
SuperFET™
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QT Optoelectronics™ TinyLogic
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FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I10
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