FJX2222A [FAIRCHILD]
General Purpose Transistor; 通用晶体管型号: | FJX2222A |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | General Purpose Transistor |
文件: | 总4页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJX2222A
3
General Purpose Transistor
•
•
Collector-Emitter Voltage: V
= 40V
CEO
Collector Dissipation: P (max) = 325mW
C
2
1
SOT-323
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
75
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
40
V
CES
EBO
6
V
I
600
325
150
mA
mW
°C
C
P
Collector Power Dissipation
Storage Temperature
C
T
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
Max.
Units
BV
I =10µA, I =0
75
40
6
V
V
CBO
CEO
EBO
C
E
BV
BV
I =10mA, I =0
C B
I =10µA, I =0
V
E
C
I
V
=60V, I =0
0.01
300
µA
CBO
CB
E
h
* DC Current Gain
V
V
V
V
V
=10V, I =0.1mA
35
50
75
100
40
FE
CE
CE
CE
CE
CE
C
=10V, I =1mA
C
=10V, I =10mA
C
=10V, I =150mA
C
=10V, I =500mA
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
I =150mA, I =15mA
0.3
1.0
V
V
CE
BE
C
B
I =500mA, I =50mA
C
B
(sat)
I =150mA, I =15mA
0.6
1.2
2.0
V
V
C
B
I =500mA, I =50mA
C
B
f
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
I =20mA, V =20V, f=100MHz
300
4
MHz
pF
T
C
CE
C
V
=10V, I =0, f=1MHz
8
4
ob
CB
E
NF
I =100µA, V =10V
dB
C
CE
R =1KΩ, f=1kHz
S
t
Turn On Time
Turn Off Time
V
V
=30V, I =150mA
35
ns
ns
ON
CC
C
=0.5V, I =15mA
BE
B1
t
V
=30V, I =150mA
285
OFF
CC
C
I
=I =15mA
B1 B2
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
S1P
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
Typical Characteristics
10000
1000
100
10
VCE = 10V
IC = 10 IB
VBE(sat)
1
0.1
VCE(sat)
10
0.01
1
10
100
1000
1
10
100
1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
12
10
8
1000
I
= 0
fE= 1MHz
VCE = 20V
100
6
4
2
10
0
1
10
100
1000
1
10
100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
Package Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.90
±0.10
0.95±0.15
+0.05
–0.02
0.05
1.30±0.10
1.00±0.10
0.275±0.100
3°
+0.04
–0.01
0.135
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
PACMAN
POP
Power247
PowerTrench
QFET
QS
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
QT Optoelectronics TinyLogic
Quiet Series
RapidConfigure
RapidConnect
TruTranslation
UHC
UltraFET
MSXPro
OCX
â
OCXPro
OPTOLOGIC
Across the board. Around the world.
The Power Franchise
ProgrammableActive Droop
â
â
SILENT SWITCHER VCX
SMARTSTART
OPTOPLANAR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
相关型号:
FJX2907ATF
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
FJX3001RTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
FAIRCHILD
FJX3002RTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明