FOD817B3S [FAIRCHILD]
4-Pin High Operating Temperature Phototransistor Optocouplers; 4针高工作温度光电晶体管光耦合器
| 型号： | FOD817B3S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 4-Pin High Operating Temperature Phototransistor Optocouplers |
| 文件： | 总12页 (文件大小：723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2011
FOD814 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
Description
■ AC input response (FOD814 only)
■ Applicable to Pb-free IR reflow soldering
■ Compact 4-pin package
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
■ Current transfer ratio in selected groups:
arsenide infrared emitting diode driving
phototransistor in a 4-pin dual in-line package.
a silicon
FOD814: 20–300%
FOD814A: 50–150%
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
■ C-UL, UL and VDE approved
■ High input-output isolation voltage of 5000Vrms
■ Minimum BV
of 70V guaranteed
CEO
■ Higher operating temperatures (versus H11AXXX
counterparts)
Applications
FOD814 Series
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
FOD817 Series
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
3 EMITTER
1
2
4
COLLECTOR
ANODE
CATHODE, ANODE 2
4
CATHODE
3 EMITTER
FOD814
FOD817
1
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C Unless otherwise specified.)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Value
Units
Symbol
Parameter
FOD814
FOD817
TOTAL DEVICE
T
Storage Temperature
-55 to +150
-55 to +105 -55 to +110
°C
°C
STG
T
Operating Temperature
Lead Solder Temperature
Junction Temperature
OPR
T
260 for 10 sec
125 Max.
210
°C
SOL
T
°C
J
θ
Junction-to-Case Thermal Resistance
Total Power Dissipation
°C/W
mW
JC
P
200
TOT
EMITTER
I
Continuous Forward Current
Reverse Voltage
50
50
6
mA
F
V
P
R
Power Dissipation
70
mW
D
Derate above 100°C
1.7
mW/°C
DETECTOR
V
V
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
70
6
V
V
CEO
ECO
I
50
mA
C
P
Collector Power Dissipation
Derate above 90°C
150
2.9
mW
C
mW/°C
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Device
Test Conditions Min. Typ.* Max. Unit
V
Forward Voltage
FOD814
FOD817
FOD817
FOD814
FOD817
I = 20mA
1.2
1.2
1.4
1.4
10
V
F
F
I = 20mA
F
I
Reverse Leakage Current
Terminal Capacitance
V = 4.0V
µA
pF
R
R
C
V = 0, f = 1kHz
V = 0, f = 1kHz
50
30
250
250
t
DETECTOR
I
Collector Dark Current
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
V
V
= 20V, I = 0
100
100
nA
V
CEO
CE
F
= 20V, I = 0
CE
F
BV
BV
Collector-Emitter Breakdown
Voltage
I = 0.1mA, I = 0
70
70
6
CEO
ECO
C
F
I = 0.1mA, I = 0
C
F
Emitter-Collector Breakdown
Voltage
I = 10µA, I = 0
V
E
F
I = 10µA, I = 0
6
E
F
DC Transfer Characteristics
DC
Symbol
Characteristic
Device
Test Conditions
Min.
20
Typ.* Max. Unit
(1)
CTR
Current Transfer
Ratio
FOD814 I = 1mA, V = 5V
300
150
600
160
260
400
600
0.2
%
F
CE
FOD814A
FOD817 I = 5mA, V = 5V
50
(1)
50
F
CE
FOD817A
FOD817B
FOD817C
FOD817D
80
130
200
300
V
Collector-Emitter
Saturation Voltage
FOD814 I = 20mA, I = 1mA
0.1
0.1
V
CE (sat)
F
C
FOD817 I = 20mA, I = 1mA
0.2
F
C
AC Transfer Characteristics
Symbol AC Characteristic
Device
Test Conditions
Min. Typ.* Max. Unit
f
Cut-Off Frequency
FOD814
V
-3dB
= 5V, I = 2mA, R = 100Ω,
15
80
kHz
C
CE
C
L
(2)
t
Response Time (Rise) FOD814,
FOD817
V
= 2 V, I = 2mA, R = 100Ω
4
18
18
µs
r
CE
C
L
t
Response Time (Fall)
FOD814,
FOD817
3
µs
f
*Typical values at T = 25°C
A
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
3
Electrical Characteristics (T = 25°C Unless otherwise specified.) (Continued)
A
Isolation Characteristics
Symbol
Characteristic
Device Test Conditions
Min.
Typ.*
Max.
Units
V
R
C
Input-Output Isolation
Voltage
FOD814, f = 60Hz, t = 1 min,
5000
Vac(rms)
ISO
ISO
ISO
(3)
FOD817
I
≤ 2µA
I-O
10
11
Isolation Resistance
Isolation Capacitance
FOD814,
FOD817
V
= 500VDC
5x10
1x10
Ω
I-O
FOD814,
FOD817
V
= 0, f = 1 MHz
0.6
1.0
pf
I-O
*Typical values at T = 25°C
A
Notes:
1. Current Transfer Ratio (CTR) = I /I x 100%.
C
F
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
4
Typical Electrical/Optical Characteristics (T = 25°C Unless otherwise specified.)
A
Fig. 1 Collector Power Dissipation
vs. Ambient Temperature (FOD814)
Fig. 2 Collector Power Dissipation
vs. Ambient Temperature (FOD817)
200
150
100
50
200
150
100
50
0
-55
0
-55
-40 -20
0
20 40 60 80 100 120
-40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
AMBIENT TEMPERATURE T (°C)
A
A
Fig. 3 Collector-Emitter Saturation Voltage
vs. Forward Current
Fig. 4 Forward Current vs. Forward Voltage
(FOD814)
6
100
10
1
Ic = 0.5mA
Ta = 25°C
1mA
3mA
5mA
T
A
= 105oC
75oC
50oC
5
4
7mA
25oC
0oC
3
2
1
0
-30oC
-55oC
0.1
0.5
1.0
1.5
2.0
0
2.5
5.0
7.5 10.0 12.5 15.0
FORWARD CURRENT I (mA)
FORWARD VOLTAGE V (V)
F
F
Fig. 6 Current Transfer Ratio
vs. Forward Current
Fig. 5 Forward Current vs. Forward Voltage
(FOD817)
100
10
1
140
120
100
VCE = 5V
Ta= 25°C
T
A
= 110oC
75oC
50oC
FOD817
80
60
40
20
0
25oC
0oC
-30oC
FOD814
-55oC
0.1
0.5
1.0
1.5
2.0
0.1 0.2 0.5
1
2
5
10 20 50 100
FORWARD VOLTAGE V (V)
FORWARD CURRENT I (mA)
F
F
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
5
Typical Electrical/Optical Characteristics (Continued) (T = 25°C Unless otherwise specified.)
A
Fig. 8 Collector Current vs.
Collector-Emitter Voltage (FOD817)
Fig. 7 Collector Current
vs. Collector-Emitter Voltage (FOD814)
30
25
20
15
10
5
50
Ta= 25°C
II = 30mA
Ta = 25°C
Pc(MAX.)
F
IF = 30mA
20mA
40
30
20
10
0
20mA
Pc(MAX.)
10mA
10mA
5mA
5mA
1mA
10 20 30 40 50 60 70 80 90 100
0
0
10 20 30 40 50 60 70 80 90
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Fig. 10 Collector-Emitter Saturation Voltage
Fig. 9 Relative Current Transfer Ratio
vs. Ambient Temperature
vs. Ambient Temperature
160
140
120
100
80
0.12
I
I
= 20mA
= 1mA
FOD814
F
I
V
= 1 mA
= 5V
F
C
0.10
0.08
0.06
0.04
0.02
0.00
CE
FOD817
= 5mA
I
F
60
V
CE
= 5V
40
20
0
-60 -40 -20
0
20 40 60 80 100 120
-60 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
A
AMBIENT TEMPERATURE T (°C)
A
Fig. 11 LED Power Dissipation
vs. Ambient Temperature (FOD814)
Fig. 12 LED Power Dissipation
vs. Ambient Temperature (FOD817)
100
100
80
60
40
20
0
80
60
40
20
0
-55 -40 -20
0
20 40 60 80 100 120
-55 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
AMBIENT TEMPERATURE T (°C)
A
A
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
6
Typical Electrical/Optical Characteristics (Continued) (T = 25°C Unless otherwise specified.)
A
Fig. 13 Response Time
vs. Load Resistance
Fig. 14 Frequency Response
100
50
VCE= 2V
Ic = 2mA
Ta = 25°C
VCE = 2V
Ic= 2mA
Ta = 25°C
tr
0
-10
-20
20
10
5
tf
td
RL=10k
100
1k
2
1
ts
0.5
0.2
0.1
0.1 0.2 0.5
1
2
5
10
0.2 0.5 15 2
10
100
1000
FREQUENCY f (kHz)
LOAD RESISTANCE R (kΩ)
L
Fig. 15 Collector Dark Current
vs. Ambient Temperature
10000
1000
100
10
V
CE
= 20V
1
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
A
Test Circuit for Frequency Response
Test Circuit for Response Time
Vcc
Input
Output
Output
Vcc
RL
RL
RD
Output
10%
90%
RD
Input
td
ts
tr
tf
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
7
Package Dimensions
Through Hole
Surface Mount
0.312 (7.92)
0.288 (7.32)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
0.200 (5.10)
0.161 (4.10)
0.200 (5.10)
0.161 (4.10)
0.276 (7.00)
0.236 (6.00)
0.157 (4.00)
0.118 (3.00)
0.157 (4.00)
0.118 (3.00)
0.010 (0.26)
0.051 (1.30)
0.043 (1.10)
0.049 (1.25)
0.030 (0.76)
0.130 (3.30)
0.020 (0.51)
0.091 (2.30)
TYP
0.024 (0.60)
0.004 (0.10)
0.412 (10.46)
0.388 (9.86)
0.010 (0.26)
0.150 (3.80)
0.110 (2.80)
0.110 (2.79)
0.090 (2.29)
0.393 (9.98)
0.300 (7.62)
Lead Coplanarity 0.004 (0.10) MAX
0.024 (0.60)
0.016 (0.40)
0.110 (2.79)
0.090 (2.29)
Surface Mount (Footprint Dimensions)
1.5
0.4" Lead Spacing
1.3
0.312 (7.92)
0.288 (7.32)
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
9
0.291 (7.40)
0.252 (6.40)
0.130 (3.30)
0.091 (2.30)
0.110 (2.80)
0.011 (1.80)
0.150 (3.80)
0.110 (2.80)
2.54
0.010 (0.26)
0.110 (2.79)
0.090 (2.29)
0.024 (0.60)
0.016 (0.40)
0.42 (10.66)
0.38 (9.66)
Note:
All dimensions are in inches (millimeters)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
8
Ordering Information
Option
S
Part Number Example
Description
Surface Mount Lead Bend
FOD814S
FOD814SD
FOD814300
FOD814300W
FOD8143S
SD
Surface Mount; Tape and reel
VDE Approved
300
300W
3S
VDE Approved, 0.4" Lead Spacing
VDE Approved, Surface Mount
VDE Approved, Surface Mount, Tape & Reel
3SD
FOD8143SD
Marking Information
4
5
6
V X ZZ Y
814
3
2
1
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
5
6
One digit year code
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
Y = Manufactured in Thailand
YA = Manufactured in China
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
9
Carrier Tape Specifications
P
P
0
2
Ø1.55 0.05
1.75 0.1
F
W
B0
A0
P
1
0.3 0.05
K0
Note:
All dimensions are in millimeters.
Symbol
Description
Dimensions in mm (inches)
W
Tape wide
16 0.3 (.63)
P
Pitch of sprocket holes
4
0.1 (.15)
7.5 0.1 (.295)
0.1 (.079)
0
F
Distance of compartment
P
2
2
P
Distance of compartment to compartment
Compartment
12 0.1 (.472)
10.45 0.1 (.411)
5.30 0.1 (.209)
4.25 0.1 (.167)
1
A0
B0
K0
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
10
Lead Free Recommended IR Reflow Condition
Tp
Tsmax
Tsmin
Ramp-down
25°C
Soldering zon
ts (Preheat)
Time (sec)
Profile Feature
Pb-Sn solder assembly
Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone
183°C
217°C
60 ~ 120 sec
30 ~ 90 sec
Peak temperature (Tp)
Ramp-down rate
240 +0/-5°C
260 +0/-5°C
6°C/sec max.
6°C/sec max.
Recommended Wave Soldering condition
Profile Feature
For all solder assembly
Max 260°C for 10 sec
Peak temperature (Tp)
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
11
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
12
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