FQB55N10TM [FAIRCHILD]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | FQB55N10TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：1062K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2008
QFET®
FQB55N10 / FQI55N10
100V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
•
•
•
•
•
•
•
55A, 100V, R
= 0.026Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 75 nC)
Low Crss ( typical 130 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
RoHS Compliant
•
D
!
D
"
! "
"
!
G
"
G
S
D2-PAK
FQB Series
I2-PAK
FQI Series
G
D
S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB55N10 / FQI55N10
Units
V
V
I
Drain-Source Voltage
100
55
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
38.9
220
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 25
1100
55
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
15.5
6.0
mJ
V/ns
W
AR
dv/dt
Power Dissipation (T = 25°C) *
3.75
155
P
A
D
Power Dissipation (T = 25°C)
W
C
- Derate above 25°C
Operating and Storage Temperature Range
1.03
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
0.97
40
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
100
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.1
V/°C
D
/
∆T
J
I
V
V
V
V
= 100 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 80 V, T = 150°C
10
DS
GS
GS
C
I
= 25 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
I
= -25 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 27.5 A
0.021 0.026
D
g
= 40 V, I = 27.5 A
(Note 4)
Forward Transconductance
--
38
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
2100
640
2730
830
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
130
170
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
25
250
110
140
75
60
510
230
290
98
ns
ns
d(on)
V
= 50 V, I = 55 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 80 V, I = 55 A,
DS
D
13
--
= 10 V
gs
gd
GS
36
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
55
220
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 55 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 55 A,
100
380
ns
nC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.55mH, I = 55A, V = 25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 55A, di/dt ≤ 300A/µs, V ≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
102
101
100
102
101
100
Bottom : 4.5 V
℃
175
℃
25
※
Notes :
μ
※
Notes :
℃
-55
1. 250 s Pulse Test
1. VDS = 40V
℃
2. TC = 25
μ
2. 250 s Pulse Test
-1
10
10-1
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.09
0.06
0.03
0.00
102
101
100
VGS = 10V
VGS = 20V
℃
℃
25
175
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
J
μ
2. 250 s Pulse Test
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
60
120
180
240
300
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
6000
5000
4000
3000
2000
1000
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
gd
VDS = 50V
VDS = 80V
C
iss
※
Notes :
Coss
1. VGS = 0 V
2. f = 1 MHz
6
4
C
rss
2
※
Note : ID = 55A
70
0
-1
10
100
101
0
10
20
30
40
50
60
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
※
Notes :
1. VGS = 10 V
2. ID = 27.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
60
50
40
30
20
10
0
103
Operation in This Area
is Limited by R DS(on)
10 µs
102
101
100
100 µs
1 ms
10 ms
DC
※
Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
3. Single Pulse
-1
10
100
101
102
25
50
75
100
125
150
175
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
1 . Z θ J C (t)
2 . D u ty F a c to r, D = t1 /t2
3 . T J M T C P D Z θ J C (t)
:
0 .2
℃
/W M a x .
=
0 .9 7
1 0-1
0 .1
-
=
*
M
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
t2
1 0-2
1 0 -5
1 0-4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Mechanical Dimensions
D2 - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
Mechanical Dimensions
I2 - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I37
FQB55N10 / FQI55N10 Rev. A1
www.fairchildsemi.com
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