FQB58N08TM [FAIRCHILD]
Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3;
| 型号： | FQB58N08TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 |
| 文件： | 总9页 (文件大小：634K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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