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FQD11P06_09 [FAIRCHILD]

60V P-Channel MOSFET; 60V P沟道MOSFET

FQD11P06_09


元器件型号：	FQD11P06_09
生产厂家：	FAIRCHILD SEMICONDUCTOR
描述和应用：	60V P-Channel MOSFET 60V P沟道MOSFET
PDF文件：	总9页 (文件大小：856K)
下载文档：	下载PDF数据表文档文件
型号参数：FQD11P06_09参数

FQD11P06TF

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

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0 FAIRCHILD

FQD11P06TM

暂无描述

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1 FAIRCHILD

FQD11P06TM_SB82077

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

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0 FAIRCHILD

FQD1200MK5

Hybrid analog/digital video module

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21 PHILIPS

FQD12N20

200V N-Channel MOSFET

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135 FAIRCHILD

FQD12N20L

200V LOGIC N-Channel MOSFET

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154 FAIRCHILD

FQD12N20LTM

200V Logic Level N-Channel MOSFET

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57 FAIRCHILD

FQD12N20LTM_F085

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3

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0 FAIRCHILD

FQD12N20LTM_F085

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 ONSEMI

FQD12N20LTM-F085

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 ONSEMI

FQD12N20TF

9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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0 ROCHESTER

FQD12N20TM

N-Channel QFET MOSFET 200 V, 9 A, 280 m

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24 FAIRCHILD

FQD12P10

100V P-Channel MOSFET

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371 FAIRCHILD

FQD12P10TF

9.4A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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3 ROCHESTER

FQD12P10TM

100V P-Channel MOSFET

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57 FAIRCHILD

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