FQD24N08 [FAIRCHILD]

80V N-Channel MOSFET; 80V N沟道MOSFET
FQD24N08
型号: FQD24N08
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

80V N-Channel MOSFET
80V N沟道MOSFET

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中文:  中文翻译
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August 2000  
TM  
QFET  
FQD24N08 / FQU24N08  
80V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as automotive, high  
efficiency switching for DC/DC converters, and DC motor  
control.  
19.6A, 80V, RDS(on) = 0.06@VGS = 10 V  
Low gate charge ( typical 19 nC)  
Low Crss ( typical 50 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
"
! "  
"
"
!
G
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
!
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQD24N08 / FQU24N08  
Units  
V
Drain-Source Voltage  
80  
19.6  
12.4  
78.4  
± 25  
230  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
A
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
19.6  
5.0  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C) *  
mJ  
V/ns  
W
6.5  
2.5  
Power Dissipation (TC = 25°C)  
50  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
0.4  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
Maximum lead temperature for soldering purposes,  
300  
°C  
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.5  
50  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
VGS = 0 V, ID = 250 µA  
D = 250 µA, Referenced to 25°C  
Drain-Source Breakdown Voltage  
80  
--  
--  
--  
--  
V
BVDSS  
Breakdown Voltage Temperature  
I
0.08  
V/°C  
/
TJ Coefficient  
IDSS  
V
DS = 80 V, VGS = 0 V  
DS = 64 V, TC = 125°C  
--  
--  
--  
--  
--  
--  
--  
--  
1
µA  
µA  
nA  
nA  
Zero Gate Voltage Drain Current  
V
10  
IGSSF  
IGSSR  
VGS = 25 V, VDS = 0 V  
VGS = -25 V, VDS = 0 V  
Gate-Body Leakage Current, Forward  
Gate-Body Leakage Current, Reverse  
100  
-100  
On Characteristics  
VGS(th)  
VDS = VGS, ID = 250 µA  
Gate Threshold Voltage  
2.0  
--  
--  
4.0  
0.06  
--  
V
S
RDS(on)  
Static Drain-Source  
On-Resistance  
VGS = 10 V, ID = 9.8 A  
0.048  
11.5  
gFS  
VDS = 30 V, ID = 9.8 A  
(Note 4)  
Forward Transconductance  
--  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
--  
--  
--  
580  
210  
50  
750  
270  
65  
pF  
pF  
pF  
V
DS = 25 V, VGS = 0 V,  
Output Capacitance  
f = 1.0 MHz  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
--  
--  
--  
--  
--  
--  
--  
10  
105  
30  
30  
220  
70  
80  
25  
--  
ns  
ns  
VDD = 40 V, ID = 24 A,  
RG = 25 Ω  
ns  
(Note 4, 5)  
(Note 4, 5)  
35  
ns  
Qg  
19  
nC  
nC  
nC  
VDS = 64 V, ID = 24 A,  
Qgs  
Qgd  
4.2  
9.6  
VGS = 10 V  
--  
Drain-Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
19.6  
78.4  
1.5  
--  
A
A
ISM  
VSD  
trr  
Maximum Pulsed Drain-Source Diode Forward Current  
VGS = 0 V, IS = 19.6 A  
GS = 0 V, IS = 24 A,  
dIF / dt = 100 A/µs  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
--  
V
V
63  
130  
ns  
nC  
(Note 4)  
Qrr  
Reverse Recovery Charge  
--  
Notes:  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L = 0.82mH, I = 19.6A, V = 25V, R = 25 Ω, Starting T = 25°C  
AS  
DD  
G
J
3. I 24A, di/dt 300A/µs, V BV Starting T = 25°C  
SD  
DD  
DSS, J  
4. Pulse Test : Pulse width 300µs, Duty cycle 2%  
5. Essentially independent of operating temperature  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Typical Characteristics  
VGS  
Top :  
15.0 V  
10.0 V  
8.0 V  
7.0 V  
6.0 V  
5.5 V  
5.0 V  
101  
101  
Bottom : 4.5 V  
150  
25  
100  
100  
-55  
Notes :  
Notes :  
μ
1. VDS = 30V  
2. 250 s Pulse Test  
1. 250 s Pulse Test  
2. TC = 25  
μ
-1  
-1  
10  
10  
-1  
10  
100  
101  
2
4
6
8
10  
VGS, Gate-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 1. On-Region Characteristics  
Figure 2. Transfer Characteristics  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
101  
VGS = 10V  
VGS = 20V  
100  
25  
150  
Notes :  
1. VGS = 0V  
Note : T = 25  
J
μ
2. 250 s Pulse Test  
-1  
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
ID , Drain Current [A]  
VSD, Source-Drain voltage [V]  
Figure 3. On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Figure 4. Body Diode Forward Voltage  
Variation vs. Source Current  
and Temperature  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
12  
10  
8
C
C
C
iss = Cgs + Cgd (Cds = shorted)  
oss = Cds + Cgd  
rss = Cgd  
VDS = 40V  
VDS = 64V  
Coss  
C
iss  
Notes :  
1. VGS = 0 V  
2. f = 1 MHz  
6
C
rss  
4
2
Note : ID = 24A  
0
-1  
10  
100  
101  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
QG, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Typical Characteristics (Continued)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.2  
1.1  
1.0  
Notes :  
0.9  
0.8  
1. VGS = 0 V  
Notes :  
1. VGS = 10 V  
2. ID = 9.8 A  
μ
A
2. ID = 250  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
T, Junction Temperature [oC]  
J
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
20  
16  
12  
8
Operation in This Area  
is Limited by R DS(on)  
102  
10 µs  
100 µs  
1 ms  
101  
100  
10 ms  
DC  
Notes :  
4
1. TC = 25 o  
2. TJ = 150 o  
C
C
3. Single Pulse  
-1  
0
25  
10  
100  
101  
102  
50  
75  
100  
125  
150  
TC, Case Temperature [  
]
VDS, Drain-Source Voltage [V]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
D = 0 .5  
1 0 0  
N o te s  
1 . Z θ J C(t)  
2 . D u ty F a c to r, D = t1 /t2  
:
0 .2  
/W M a x.  
=
2 .5  
0 .1  
3 . T J M  
-
T C  
=
P D  
* Z θ J C(t)  
M
0 .0 5  
1 0 -1  
0 .0 2  
0 .0 1  
PDM  
t1  
s in g le p u ls e  
t2  
1 0 -2  
1 0 -5  
1 0 -4  
1 0 -3  
1 0 -2  
1 0 -1  
1 0 0  
1 0 1  
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]  
Figure 11. Transient Thermal Response Curve  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Gate Charge Test Circuit & Waveform  
VGS  
Same Type  
50KΩ  
as DUT  
Qg  
12V  
200nF  
10V  
300nF  
VDS  
VGS  
Qgs  
Qgd  
DUT  
3mA  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
VDS  
90%  
VDS  
VDD  
VGS  
RG  
10%  
VGS  
DUT  
10V  
td(on)  
tr  
td(off)  
tf  
t on  
t off  
Unclamped Inductive Switching Test Circuit & Waveforms  
BVDSS  
--------------------  
BVDSS - VDD  
L
1
2
2
----  
EAS  
=
L IAS  
VDS  
I D  
BVDSS  
IAS  
RG  
VDD  
ID (t)  
VDD  
VDS (t)  
DUT  
10V  
t p  
t p  
Time  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Peak Diode Recovery dv/dt Test Circuit & Waveforms  
+
DUT  
VDS  
_
I SD  
L
Driver  
RG  
Same Type  
as DUT  
VDD  
VGS  
• dv/dt controlled by RG  
• ISD controlled by pulse period  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
I SD  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VSD  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Package Dimensions  
DPAK  
6.60 ±0.20  
5.34 ±0.30  
2.30 ±0.10  
0.50 ±0.10  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
1.02 ±0.20  
2.30 ±0.20  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
6.60 ±0.20  
(5.34)  
(5.04)  
(1.50)  
(2XR0.25)  
0.76 ±0.10  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
Package Dimensions (Continued)  
IPAK  
2.30 ±0.20  
0.50 ±0.10  
6.60 ±0.20  
5.34 ±0.20  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  
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intended to be an exhaustive list of all such trademarks.  
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GTO™  
HiSeC™  
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QT Optoelectronics™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
POP™  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. F1  

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