FQU6N25TU [FAIRCHILD]
Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3;
| 型号： | FQU6N25TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：888K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2013
FQD6N25
N-Channel QFET® MOSFET
250 V, 4.4 A, 1.0 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
• 4.4 A, 250 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V,
ID = 2.2 A
•
•
•
•
Low Gate Charge (Typ. 6.6 nC)
Low Crss (Typ. 7.5 pF)
100% Avalanche Tested
RoHS Compliant
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
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Thermal Characteristics
Symbol
Parameter
Unit
FQD6N25TM
RJC
RJA
Thermal Resistance, Junction to Case, Max.
2.78
110
50
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
oC/W
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
www.fairchildsemi.com
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Tape and Reel 16 mm
330 mm
Quantity
FQD6N25
DPAK
2500 units
FQD6N25TM
Electrical Characteristics
T = 25°C unless otherwise noted.
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Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 6.2 mH, I = 4.4 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 5.5 A, di/dt ≤ 300 A/µs , V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
2
Typical Characteristics
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ꢃ
ꢆ
ꢂ
ꢀ
ꢁ
ꢀ
ꢁꢂꢁꢃꢆꢀ
ꢉꢄ
ꢀ
ꢁꢂꢁꢄꢆꢀ
ꢉꢄ
ꢂ
ꢅꢀ
ꢀ
ꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀ
ꢅꢆꢀ
ꢀ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢉ
ꢂꢆ
ꢀꢁ
ꢁ
ꢀꢀꢀꢌꢈꢀꢌꢍꢋ ꢅꢀꢎꢏꢐꢅꢄꢀꢑꢄꢅꢃ
ꢀ
ꢂ
ꢀꢁꢂꢃꢄꢀꢆꢀꢑ ꢀꢊꢀꢌꢍ
ꢉ
ꢀꢁ
ꢅꢀ
ꢁ
ꢆ
ꢈ
ꢀꢂ
ꢀꢁꢂ
ꢀꢁꢃ
ꢀꢁꢄ
ꢀꢁꢇ
ꢅꢁꢀ
ꢅꢁꢂ
ꢅꢁꢃ
ꢅꢁꢄ
ꢁ
ꢀꢂꢀꢃꢄꢅꢆꢇꢈꢉꢊꢆꢋꢌꢍꢀꢁꢄꢎꢏꢋꢐꢈꢀꢀꢑꢁꢒ
ꢘ ꢂꢀꢊꢆꢋꢌꢍꢀꢖꢅꢆꢆꢈꢍꢏꢀꢑꢙꢒ
ꢀꢁ
ꢁ
ꢀꢁꢂꢃꢄꢅꢆꢓꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢆꢙꢐꢈ
ꢚꢄꢊꢁꢎꢆꢉꢃꢄꢄꢅꢎꢍꢆꢊꢎꢛꢆꢒꢊꢍꢅꢆꢗꢘꢜꢍꢊꢂꢅ
ꢀꢁꢂꢃꢄꢅꢆꢝꢈꢆꢞꢘꢛ ꢆꢚꢁꢘꢛꢅꢆꢀꢘꢄ!ꢊꢄꢛꢆꢗꢘꢜꢍꢊꢂꢅꢆ
ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ"ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆ
ꢊꢎꢛꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢀ
ꢇꢁꢁ
ꢀꢂ
ꢀꢁ
ꢄ
ꢀ
ꢃꢄꢄꢁꢂꢁꢀꢅꢄꢁꢃꢁꢀꢅꢆꢁꢄꢀꢆꢄꢁꢂꢁꢅꢆꢇꢈꢉꢊꢋꢌ
ꢀ
ꢁꢂꢁꢀ ꢁꢃꢁꢀ
ꢀ ꢁꢂꢁꢅꢆꢀ
ꢃꢄ
ꢇꢄꢄ
ꢆꢄ
ꢅꢆ
ꢀꢈꢄꢄꢁꢂꢁꢀꢅꢆ
ꢀ
ꢁꢂꢁꢃꢄꢅꢀ
ꢃꢄ
ꢃꢁꢁ
ꢆꢁꢁ
ꢂꢁꢁ
ꢀꢁꢁ
ꢁ
ꢀ
ꢁꢂꢁꢄꢆꢆꢀ
ꢃꢄ
ꢇ
ꢈꢆꢆ
ꢇ
ꢇꢆꢆ
ꢅ
ꢀ
ꢁꢍꢇꢉꢊꢅꢁꢎ
ꢃ
ꢁꢁꢁꢏꢐꢁꢑꢀꢁꢁꢂꢁꢒꢁꢑ
ꢁꢁꢁꢓꢐꢁꢔꢁꢂꢁꢏꢁꢕꢖꢗ
ꢇ
ꢅꢆꢆ
ꢂ
ꢀ
ꢀꢁꢂꢃꢄꢀꢆꢀꢘ ꢀꢊꢀꢍꢈꢍꢀꢙ
ꢂ
ꢁ
ꢀꢁ
ꢂ
ꢀꢁ
ꢁ
ꢀꢁ
ꢁ
ꢂ
ꢃ
ꢅ
ꢄ
ꢀꢁ
ꢓ ꢂꢀꢔꢄꢏꢋꢎꢀꢕꢋꢏꢈꢀꢖꢗꢋꢆꢐꢈꢀꢑꢍꢖꢒ
ꢁ
ꢂꢀꢊꢆꢋꢌꢍꢉꢃꢄꢅꢆꢇꢈꢀꢁꢄꢎꢏꢋꢐꢈꢀꢑꢁꢒ
ꢂ
ꢁꢀ
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
3
(Continued)
Typical Characteristics
ꢀ
ꢀ
ꢆꢋꢇ
ꢆꢋꢁ
ꢂꢋꢇ
ꢂꢋꢁ
ꢀꢋꢇ
ꢀꢋꢁ
ꢁꢋꢇ
ꢁꢋꢁ
ꢁꢅꢄ
ꢁꢅꢁ
ꢁꢅꢂ
ꢂꢅꢇ
ꢂꢅꢆ
ꢀꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢀꢉ
ꢇꢈ
ꢀ
ꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀꢀꢀꢌꢈꢀꢍ ꢀꢊꢀꢌꢎꢋꢀꢁꢏ
ꢉ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢇꢋꢀꢉ
ꢀꢁ
ꢀꢀꢀꢌꢈꢀꢘ ꢀꢊꢀꢌꢈꢔꢍꢀꢙ
ꢂ
ꢀꢁꢂꢂ
ꢀꢃꢂ
ꢂ
ꢃꢂ
ꢁꢂꢂ
ꢁꢃꢂ
ꢄꢂꢂ
ꢊꢀꢁꢁ
ꢊꢇꢁ
ꢁ
ꢇꢁ
ꢀꢁꢁ
ꢀꢇꢁ
ꢂꢁꢁ
ꢔ ꢂꢀ"ꢅꢍꢇꢏꢌꢄꢍꢀꢔꢈ !ꢈꢆꢋꢏꢅꢆꢈꢀꢑꢆꢖꢒ
ꢀꢂꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢂꢀꢊꢋꢌꢊꢍꢎꢇꢄꢍꢊꢂꢏꢃꢐꢑ
ꢅ
ꢀꢁꢂꢃꢄꢅꢆ-ꢈꢆꢞꢄꢅꢊ.ꢛꢘ!ꢎꢆꢗꢘꢜꢍꢊꢂꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀꢁꢂꢃꢄꢅꢆ/ꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢀ
ꢇ
ꢃ
ꢆ
ꢂ
ꢀ
ꢁ
ꢘꢙꢊꢈꢚꢉꢛꢇꢜꢁꢛꢜꢁꢝꢆꢛꢅꢁꢞꢈꢊꢚꢁ
ꢛꢅꢁ ꢛ!ꢛꢉꢊꢋꢁ"#ꢁ$ꢁ
ꢍꢁꢎꢇꢏꢐ
ꢀꢁꢁ
ꢃꢆꢆꢁµꢈ
ꢃꢁꢒꢈ
ꢃꢆꢁꢒꢈ
ꢐꢇ
ꢂ
ꢀꢁ
ꢀ
ꢁꢍꢇꢉꢊꢅꢁꢎ
ꢁꢁꢁꢏꢐꢁꢝꢂꢁꢂꢁꢓ%ꢁꢇꢀ
ꢁꢁꢁꢓꢐꢁꢝꢉꢁꢂꢁꢏ%ꢒꢁꢇꢀ
ꢁꢁꢁ&ꢐꢁ'ꢛꢜ()ꢊꢁ*+)ꢅꢊ
ꢀꢁ
ꢀꢁ
ꢂ
ꢁ
ꢆ
ꢂꢇ
ꢇꢁ
ꢉꢇ
ꢀꢁꢁ
ꢀꢂꢇ
ꢀꢇꢁ
ꢀꢁ
ꢀꢁ
ꢀꢁ
ꢀ
ꢔ ꢂꢀꢖꢋꢞꢈꢀꢔꢈ !ꢈꢆꢋꢏꢅꢆꢈꢀꢑ
ꢒ
ꢁ
ꢂꢀꢊꢆꢋꢌꢍꢉꢃꢄꢅꢆꢇꢈꢀꢁꢄꢎꢏꢋꢐꢈꢀꢑꢁꢒ
ꢄ
ꢁꢀ
ꢀꢁꢂꢃꢄꢅꢆ(ꢈꢆ)ꢊ*ꢁ$ꢃ$ꢆ"ꢊ&ꢅꢆꢔꢋꢅꢄꢊꢍꢁꢎꢂꢆ+ꢄꢅꢊ
ꢀꢁꢂꢃꢄꢅꢆ',ꢈꢆ)ꢊ*ꢁ$ꢃ$ꢆꢚꢄꢊꢁꢎꢆꢉꢃꢄꢄꢅꢎꢍ
ꢙꢐꢈꢆꢆꢉꢊꢐꢅꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢐ ꢂ ꢆ ꢑꢅ
ꢀ ꢁ ꢂ
ꢀ
ꢀꢁ ꢂ ꢃꢄ ꢅ ꢀꢆ
ꢆ ꢑꢄ
ꢂ
ꢀꢀꢀꢇ ꢈꢀꢚ ꢉ ꢂꢛꢃꢜ ꢀꢊ ꢀꢌ ꢈꢔ ꢓ ꢀ ꢝꢞ ꢀ ! " ꢈ
ꢀ
ꢀꢀꢀꢌ ꢈꢀ# ꢏ ꢃ$ ꢀ% ! & ꢃꢂ '(ꢀ# ꢊ ꢃꢊ ꢝꢃꢋ
ꢆ ꢑꢃ
ꢀꢀꢀ) ꢈꢀꢑ ꢀ*ꢀꢑ ꢀꢊ ꢀꢎ ꢀ+ ꢀꢚ
ꢛꢃꢜ
ꢀ
ꢉ ꢂ
ꢉ ꢌ
ꢂ
ꢍ
ꢌ
ꢆ ꢑꢆ ꢅ
"
ꢀ ꢁ ꢀꢁ
ꢆ ꢑꢆ ꢄ
ꢀꢅ
ꢆ ꢑꢆ ꢃ
ꢁꢄ
ꢈ ꢉꢊ ꢋ ꢌꢍ ꢁꢎ ꢏ ꢌꢈ ꢍ
ꢁꢆ
ꢀ ꢁ ꢀꢃ
ꢀ ꢁ ꢀꢄ
ꢀ ꢁ ꢀꢅ
ꢀ ꢁ ꢀꢆ
ꢀ ꢁ ꢀꢁ
ꢀ ꢁ ꢂ
ꢀ ꢁ ꢁ
ꢏ
ꢂꢀꢃ ꢚ ꢅ ꢋ ꢆꢈ ꢀꢛ ꢋ ꢜ ꢈ ꢀꢝ ꢅ ꢎꢞ ꢈ ꢀꢊ ꢅ ꢆꢋ ꢏꢌꢄ ꢍ ꢀꢑꢞ ꢈ ꢇ
ꢃ
ꢀꢁꢂꢃꢄꢅꢆ''ꢈꢆ#ꢄꢊꢎꢐꢁꢅꢎꢍꢆ#ꢏꢅꢄ$ꢊꢜꢆꢖꢅꢐꢋꢘꢎꢐꢅꢆꢉꢃꢄꢙꢅ
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
www.fairchildsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
6
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
7
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
8
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FQD6N25 Rev. C1
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