FS6S0965R-TU [FAIRCHILD]
Power Switch(SPS); 功率开关（ SPS）的
| 型号： | FS6S0965R-TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Switch(SPS) |
| 文件： | 总16页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
FS6S-SERIES
FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Fairchild Power Switch(SPS)
Features
• Wide Operating Frequency Range Up to 150Khz
TO-3P-5L
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start-up Current (max:170uA)
• Low Operating Current (max:15mA)
• Internal High Voltage SenseFET
1
• Built-in Auto-Restart Circuit
• Over Voltage Protection (Auto Restart Mode)
TO-220F-5L
• Over Load Protection (Auto Restart Mode)
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
• Internal Burst Mode Controller for Stand-by Mode
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
1
1. Drain 2. Gnd 3. V
CC
4. FeedBack 5. Sync.
Internal Block Diagram
1
3
Vpp=5.8/7.2V
Internal
Bias
-
-
Vref
OSC
+
+
5
SYNC
UVLO
VREF
Burst Mode Coltroller
VFB
-
Vth=1V
+
S
_
QB
Ron
R
VCC
-
Vth=11/12V
+
Roff
-
-
PWM
4
2.5R
+
R
Ifb
VREF
VCC
Idelay
Vfb Offset
Rsense
+
OCL
Filter
OLP
OVP
+
(130nsec)
-
Vth=1V
2
-
Vth=7.5V
S
Q
Q
S
TSD
(Tj=160℃)
VCC
+
-
Uvlo Reset
(VCC=9V)
Power-on Reset
(VCC=6.5V)
R
R
Vth=30V
Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
FS6S0965RT/FS6S0965R
Drain to PKG Breakdown Voltage
Maximum Drain Voltage
Symbol
Value
Unit
BV
FS6S0965RT
3500
V
V
PKG
V
650
650
±30
36
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
V
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
I
ADC
ADC
ADC
A(mJ)
V
DM
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2)
Maximum Supply Voltage
I
I
9
D
D
7.2
)
I
(E
)
25(950)
35
AS AS
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
-0.3 to 10
FS6S0965RT
Input Voltage Range
V
SS
48
170
PD (Watt H/S)
Derating
W
FS6S0965R
FS6S0965RT
FS6S0965R
Total Power Dissipation
0.385
1.33
W / °C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
°C
°C
°C
J
T
A
-25 to +85
T
-55 to +150
STG
FS6S1265R
Maximum Drain Voltage
V
650
650
±30
48
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2)
Maximum Supply Voltage
I
I
12
D
D
8.4
)
I
(E
)
30(950)
35
AS AS
V
CC,MAX
V
V
-0.3 to V
V
FB
SS
CC
Input Voltage Range
-0.3 to 10
240
V
PD (Watt H/S)
Derating
W
Total Power Dissipation
1.92
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
STG
°C
2
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
FS6S15658R
Maximum Drain Voltage
V
650
650
±30
60
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2)
Maximum Supply Voltage
I
I
15
D
D
12.0
37(--)
35
)
I
(E )
AS AS
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 10
280
V
SS
PD (Watt H/S)
Derating
W
Total Power Dissipation
2.22
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
STG
°C
Notes :
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V =50V, R = 27Ω, starting Tj = 25°C
DD
G
3. L = 13uH, starting Tj = 25°C
3
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
FS6S0965RT/FS6S0965R
Drain-Source Breakdown Voltage
BV
V
V
=0V, I =50µA
650
-
-
-
-
V
DSS
GS
DS
D
=Max., Rating, V =0V
GS
200
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max., Rating,
DS
-
-
300
µA
=0V, T =125°C
GS
C
Static Drain-Source On Resistance (1)
Forward transconductance(1)
Input capacitance
R
V
=10V, I =4.5A
D
-
-
-
-
-
-
-
-
-
1.1
-
1.2
Ω
DS(on)
GS
gfs
VDS=50V, ID=4.5A
-
-
-
-
-
-
-
-
S
Ciss
1300
135
25
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
Coss
Crss
td(on)
tr
pF
nS
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
25
Rise time
75
Turn off delay time
td(off)
tf
130
70
Fall time
operating temperature)
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=9.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
45
-
Gate-source charge
Qgs
Qgd
-
-
8
-
-
nC
Gate-drain (Miller) charge
22
FS6S1265R
Drain-Source Breakdown Voltage
BV
V
V
=0V, I =50µA
650
-
-
-
-
V
DSS
GS
DS
D
=Max., Rating, V =0V
GS
200
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max., Rating,
DS
-
-
300
µA
=0V, T =125°C
GS
C
Static Drain-Source On Resistance (1)
Forward transconductance(1)
Input capacitance
R
V
=10V, I =4.5A
D
-
-
-
-
-
-
-
-
-
0.7
-
0.9
Ω
DS(on)
GS
gfs
VDS=50V, ID=4.5A
-
-
-
-
-
-
-
-
S
Ciss
1820
185
32
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
Coss
Crss
td(on)
tr
pF
nS
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
38
Rise time
120
200
100
Turn off delay time
td(off)
tf
Fall time
operating temperature)
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
60
-
Gate-source charge
Qgs
Qgd
-
-
10
30
-
-
nC
Gate-drain (Miller) charge
4
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Electrical Characteristics (SFET Part; Continued)
(Ta = 25°C unless otherwise specified)
Parameter
FS6S15658R
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
BV
V
V
=0V, I =50µA
650
-
-
-
-
V
DSS
GS
DS
D
=Max., Rating, V =0V
GS
200
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max., Rating,
DS
-
-
300
µA
=0V, T =125°C
GS
C
Static Drain-Source On Resistance (1)
Forward transconductance(1)
Input capacitance
R
V
=10V, I =4.5A
D
-
-
-
-
-
-
-
-
-
0.5
-
0.65
Ω
DS(on)
GS
gfs
VDS=50V, ID=4.5A
-
-
-
-
-
-
-
-
S
Ciss
2590
270
50
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
Coss
Crss
td(on)
tr
pF
nS
VDD=0.5BVDSS, ID=15.0A
(MOSFET switching
time are essentially
independent of
50
Rise time
155
270
125
Turn off delay time
td(off)
tf
Fall time
operating temperature)
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=15.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
90
-
Gate-source charge
Qgs
Qgd
-
-
15
45
-
-
nC
Gate-drain (Miller) charge
Note:
(1) Pulse Test : Pulse width ≤300uS, Duty Cycle ≤ 2 %
1
(2) S = ---
R
5
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Electrical Characteristics (CONTROL Part)
(V =16V, Tamb = 25°C unless otherwise specified)
CC
Parameter
UVLO SECTION
Symbol
Conditions
Min. Typ. Max. Unit
Start Threshold Voltage
V
V
V
=GND
14
8
15
9
16
10
V
V
START
FB
FB
Stop Threshold Voltage
V
=GND
STOP
OSCILLATOR SECTION
Initial Frequency
F
-
22
0
25
1
28
3
kHz
%
OSC
Voltage Stability
F
12V ≤ V
≤ 23V
CC
STABLE
Temperature Stability (Note2)
Maximum Duty Cycle
∆F
-25°C ≤ Τa≤ 85°C
0
±5
95
-
±10
98
0
%
OSC
MAX
D
-
-
92
-
%
Minimum Duty Cycle
D
MIN
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SYNC. & SOFTSTART SECTION
Softstart Voltage
I
V
V
V
=GND
≥ 6.9V
=5V
0.7
6.9
1.6
0.9
7.5
2.0
1.1
8.1
2.4
mA
V
FB
FB
FB
FB
V
SD
I
µA
DELAY
V
V
V
V
V
=2V
=0V
4.7
0.8
-
5.0
1.0
7.2
5.8
5.3
1.2
-
V
mA
V
SS
FB
SS
CC
CC
Softstart Current
I
SS
Sync High Threshold Voltage(Note3)
Sync Low Threshold Voltage(Note3)
BURST MODE SECTION
Burst Mode Low Threshold Voltage
Burst Mode High Threshold Voltage
Burst Mode Enable Feedback Voltage
Burst Mode Peak Current Limit(Note4)
Burst Mode Freqency
V
=16V , V =5V
FB
SYNCH
V
=16V , V =5V
FB
-
-
V
SYNCL
V
V
V
V
V
V
=0V
=0V
10.4 11.0 11.6
11.4 12.0 12.6
V
V
BURL
FB
FB
CC
CC
CC
V
BURH
V
=10.5V
0.7
0.6
40
1.0
0.85
50
1.3
1.1
60
V
BEN
I
=10.5V , V =0V
A
BURPK
FB
F
=10.5V , V =0V
kHz
BUR
FB
CURRENT LIMIT(SELF-PROTECTION)SECTION
FS6S0965R
FS6S1265R
FS6S15658R
5.28
7.04
7.04
6.0
8.0
8.0
6.72
8.96
8.96
Peak Current Limit (Note4)
IOVER
A
PROTECTION SECTION
Over Voltage Protcetion
V
V
V
≥ 27V
CC
27
0.9
140
30
1.0
160
33
1.1
-
V
V
OVP
Over Current Latch voltage(Note3)
Thermal Shutdown Tempature(Note2)
TOTAL DEVICE SECTION
Start Up Current
-
-
OCL
TSD
°C
I
V
V
V
V
=GND, V =14V
CC
-
-
0.1
10
0.17
15
mA
mA
START
FB
FB
FB
FB
I
=GND, V =16V
CC
OP
OP(MIN)
Operating Supply Current(Note1)
I
=GND, V =12V
CC
I
=GND, V =30V
CC
OP(MAX)
Note:
1. These parameters is the Current Flowing in the Control IC.
2. These parameters, although guaranteed, are not 100% tested in production
3. These parameters, although guaranteed, are tested in EDS(wafer test) process
4. These parameters are indicated Inductor Current.
6
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Typical Performance Characteristics
[mA]
Istart
[mA]
Iop
0.15
0.12
0.09
0.06
0.03
0.00
10.2
10.0
9.8
9.6
9.4
9.2
9.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 1. Start Up Current vs. Temp.
Figure 2. Operating Supply Current vs. Temp.
[V]
Vstop
[V]
Vstart
9.10
9.06
9.02
8.98
8.94
8.90
16.0
15.6
15.2
14.8
14.4
14.0
13.6
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 4. Stop Threshold Voltage vs. Temp.
Figure 3. Start Threshold Voltage vs. Temp.
[%]
Dmax
[kHz]
Fosc
96.0
95.6
95.2
94.8
94.4
94.0
26.0
25.2
24.4
23.6
22.8
22.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 5. Initial Frequency vs. Temp.
Figure 6. Maximum Duty vs. Temp.
7
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Typical Performance Characteristics (Continued)
[mA]
Ifb
[V]
Voff
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.50
0.40
0.30
0.20
0.10
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 7. Feedback Offset Voltage vs. Temp.
Figure 8. Feedback Source Current vs. Temp.
[V]
Vsd
[uA]
Idelay
7.60
7.56
7.52
7.48
7.44
7.40
2.10
2.02
1.94
1.86
1.78
1.70
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 9. Shutdown Delay Current vs. Temp.
Figure 10. Shutdown Feedback Voltage vs. Temp.
[V]
Vss
[V]
Vovp
5.10
5.06
5.02
4.98
4.94
4.90
31.0
30.6
30.2
29.8
29.4
29.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 11. Softstart Voltage vs. Temp.
Figure 12. Over Voltage Protection vs. Temp.
8
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Typical Performance Characteristics (Continued)
[V]
Vburh
[V]
Vburl
12.3
12.2
12.1
12.0
11.9
11.8
11.7
11.2
11.1
11.0
10.9
10.8
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 13. Burst Mode Low Voltage vs. Temp.
Figure 14. Burst Mode High Voltage vs. Temp.
[kHz]
Fbur
[V]
Vben
53.0
51.0
49.0
47.0
45.0
43.0
1.60
1.20
0.80
0.40
0.00
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 15. Burst Mode Frequency vs. Temp.
Figure 16. Burst Mode Enable Voltage vs. Temp.
[A]
Ibur_pk
[A]
Iover
0.98
0.95
0.92
0.89
0.86
0.83
6.20
6.10
6.00
5.90
5.80
5.70
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 17. Burst Mode Peak Current vs. Temp.
Figure 18. Peak Current Limit vs. Temp.
9
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Package Dimensions
TO-3P-5L
10
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Package Dimensions (Continued)
TO-3P-5L (Forming)
11
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Package Dimensions (Continued)
TO-220F-5L
12
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Package Dimensions (Continued)
TO-220F-5L (Forming)
13
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
TOP Mark and Pinout Information
SXXYY
F
MARKING
Pin No.
Symbol
Drain
Description
SenseFET Drain
1
2
3
4
5
GND
Ground (Source)
V
CC
Control Part Supply Input
PWM Non Inverting Input
Soft start & External Sync.
F/B
S/S
1
Device
MARKING
FS6S0965R
FS6S0965RT
FS6S1265R
FS6S15658R
6S0965R
6S1265R
6S15658R
Notes ;
(1) F ; Fairchild Semiconductor
(2) 6S0965R, 6S1265R, 6S15658R ; Device Marking Name
(3) S: Plant Code (SPS: S)
(4) XX: Patweek Based on Fairchild Semiconductor Work Month Calender
(5) YY: Last Two Digit of Calender Year
14
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Ordering Information
Product Number
FS6S0965R-TU
Package
TO-3P-5L
Marking Code
BVdss
Rds(on)
6S0965R
650V
1.1Ω
FS6S0965R-YDTU
TO-3P-5L(Forming)
FS6S0965RT-TU
TO-220F-5L
6S0965R
6S1265R
6S15658R
650V
650V
650V
1.1Ω
0.7Ω
0.5Ω
FS6S0965RT-YDTU
TO-220F-5L(Forming)
FS6S1265R-TU
TO-3P-5L
FS6S1265R-YDTU
TO-3P-5L(Forming)
FS6S15658R-TU
TO-3P-5L
FS6S15658R-YDTU
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
15
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
2/5/01 0.0m 001
2001 Fairchild Semiconductor Corporation
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