H11F2TM_技术文档

May 2007

H11F1M, H11F2M, H11F3M

Photo FET Optocouplers

tm

Features

General Description

As a remote variable resistor:

■ ≤ 100Ω to ≥ 300MΩ

The H11FXM series consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled to a symmetrical

bilateral silicon photo-detector. The detector is electri-

cally isolated from the input and performs like an ideal

isolated FET designed for distortion-free control of low

level AC and DC analog signals. The H11FXM series

devices are mounted in dual in-line packages.

■ ≥ 99.9% linearity

■ ≤ 15pF shunt capacitance

■ ≥ 100GΩ I/O isolation resistance

As an analog switch:

■ Extremely low offset voltage

■ 60 V

signal capability

pk-pk

■ No charge injection or latch-up

■ t , t ≤ 15µS

on off

■ UL recognized (File #E90700)

Applications

As a remote variable resistor:

■ Isolated variable attenuator

■ Automatic gain control

■ Active filter fine tuning/band switching

As an analog switch:

■ Isolated sample and hold circuit

■ Multiplexed, optically isolated A/D conversion

Packages

Schematic

OUTPUT

TERM.

1

ANODE

6

5

CATHODE 2

OUTPUT

TERM.

4

3

H11FXM Rev. 1.0.0

www.fairchildsemi.com

Absolute Maximum Ratings ^{(T = 25°C unless otherwise speciﬁed)}

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Device

Value

Units

TOTAL DEVICE

T

Storage Temperature

Operating Temperature

Lead Solder Temperature

All

-55 to +150

-40 to +100

°C

STG

T

OPR

T

260 for 10 sec

SOL

EMITTER

I

Continuous Forward Current

All

60

5

mA

V

F

V

Reverse Voltage

R

I

Forward Current – Peak (10 µs pulse, 1% duty cycle)

LED Power Dissipation 25°C Ambient

Derate Linearly from 25°C

1

A

F(pk)

P

100

1.33

mW

mW/°C

D

DETECTOR

P

Detector Power Dissipation @ 25°C

Derate linearly from 25°C

All

300

4.0

30

mW

mW/°C

V

D

BV

Breakdown Voltage (either polarity)

H11F1M,

H11F2M

4-6

H11F3M

All

15

V

I

Continuous Detector Current (either polarity)

100

mA

4-6

H11FXM Rev. 1.0.0

www.fairchildsemi.com

2

Electrical Characteristics ^(T= 25°C unless otherwise specified.)

A

Individual Component Characteristics

Symbol

EMITTER

Parameter

Test Conditions

Device

Min. Typ.* Max. Unit

V

Input Forward Voltage

I = 16mA

All

1.3

50

1.75

10

V

F

I

Reverse Leakage Current V = 5V

µA

pF

R

C

Capacitance

V = 0 V, f = 1.0 MHz

J

OUTPUT DETECTOR

BV

Breakdown Voltage

Either Polarity

I

= 10µA, I = 0

H11F1M, H11F2M

30

15

V

4-6

F

H11F3M

All

I

Off-State Dark Current

V

= 15 V, I = 0

50

nA

µA

4-6

F

= 15 V, I = 0,

All

4-6

F

T = 100°C

A

R

C

Off-State Resistance

Capacitance

V

= 15 V, I = 0

All

300

MΩ

4-6

F

= 15 V, I = 0,

15

pF

4-6

F

f = 1MHz

Transfer Characteristics

Symbol

Characteristics

Test Conditions

Device

Min Typ* Max Units

DC CHARACTERISTICS

R

On-State Resistance

I = 16mA,

H11F1M

H11F2M

H11F3M

H11F1M

H11F2M

H11F3M

All

200

330

470

200

330

470

0.1

Ω

%

4-6

F

I

= 100µA

4-6

R

I = 16mA,

6-4

F

I

= 100µA

6-4

Resistance, non-linearity I = 16mA,

F

and assymetry

I

= 25µA RMS,

4-6

f = 1kHz

AC CHARACTERISTICS

t

Turn-On Time

Turn-Off Time

R

= 50Ω, I = 16mA,

= 5V

All

25

µS

on

L

F

V

4-6

R

= 50Ω, I = 16mA,

F

off

L

V

= 5V

4-6

Isolation Characteristics

Symbol Characteristic

Test Conditions

Device

All

Min.

Typ.*

Max.

Units

V

R

C

Isolation Voltage

f = 60Hz, t = 1 sec.

7500

V

PEAK

ISO

AC

11

Isolation Resistance

Isolation Capacitance

V

= 500 VDC

All

10

Ω

I-O

f = 1MHz

All

0.2

pF

*All Typical values at T = 25°C

A

H11FXM Rev. 1.0.0

www.fairchildsemi.com

3

Typical Performance Curves

Figure 1. Resistance vs. Input Current

Figure 2. Output Characteristics

800

600

400

200

0

I

= 18mA

= 14mA

= 10mA

F

I

F

I

10

F

I

= 6mA

F

I

= 2mA

F

I

F

= 2mA

I

= 6mA

F

-200

-400

-600

-800

1

= 10mA

= 14mA

I

= 18mA

F

Normalized to:

I

= 16 mA

F

= 5 µA RMS

46

0.1

-0.2

-0.1

0.0

0.1

0.2

1

0

100

V

- OUTPUT VOLTAGE (V)

46

I

- INPUT CURRENT - mA

F

Figure 3. LED Forward Voltage vs. Forward Current

Figure 4. Off-state Current vs. Ambient Temperature

10000

2.0

1.8

1.6

1.4

1.2

NORMALIZED TO:

= 15V

V

46

= 0mA

I

F

T

A

= 25°C

1000

100

10

T

= -55°C

= 25°C

A

T

A

1.0

0.8

T

A

= 100°C

1

0.1

1

10

100

0

20

40

60

80

100

T

- AMBIENT TEMPERATURE (°C)

A

I

- LED FORWARD CURRENT - mA

F

Figure 5. Resistance vs. Temperature

Figure 6. Region of Linear Resistance

100

80

100

80

3

2

NORMALIZED TO

I_F= 16mA

I_4-6= 25µA RMS

T_A= 25°C

MAXIMUM

RMS

VOLTAGE

60

40

60

40

20

Observed

Range

1K

10

8

10

8

1

6

MAXIMUM

RMS

CURRENT

0.8

4

0.6

2

1

2

0.4

-50

100

1000

10K

100K

-25

0

25

50

75

100

T

- AMBIENT TEMPERATURE - °C

r(on) RESISTANCE - Ω

A

H11FXM Rev. 1.0.0

www.fairchildsemi.com

4

Figure 7. Resistive non-linearity vs. D.C. Bias

5

4

3

2

I

= 10µA RMS

4-6

r(on) = 200Ω

1

0

1

50

100

150

200

250

300

350

V

4-6

- D.C. BIAS VOLTAGE - mA

H11FXM Rev. 1.0.0

www.fairchildsemi.com

5

Typical Applications

As a Variable Resistor

As an Analog Signal Switch

ISOLATED SAMPLE AND HOLD CIRCUIT

ISOLATED VARIABLE ATTENUATORS

500K

+

-

V_IN

V_OUT

V_IN

50

V_IN

I_F

V_OUT

H11F1M

C

I_F

V_OUT

I_F

LOW FREQUENCY

t

I_F

HIGH FREQUENCY

DYNAMIC RANGE 70db

FOR 0 ≤ I_F≤ 30mA

DYNAMIC RANGE 50db

@1MHz

@10KHz

FOR 0 ≤ I_F≤ 30mA

Accuracy and range are improved over conventional FET

switches because the H11FXM has no charge injection from

the control signal. The H11FXM also provides switching of

either polarity input signal up to 30V mag.nitude.

Distortion free attenuation of low level A.C. signals is accom-

plished by varying the IRED current, I Note the wide dynamic

F

range and absence of coupling capacitors; D.C. level shifting or

parasitic feedback to the controlling function.

AUTOMATIC GAIN CONTROL

MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION

CALL V1

H11F1M

CALL

V_n

DATA

V_OUT

V_IN

ACQUISITION

V₁

V₂

H74A1

+

-

MSB

LSB

MSB

LSB

A/D

CONVERTER

PROCESS

CONTROL

LOGIC

V_n

H74A1

H11F1M

I_F

SYSTEM

500K

H11F1M

AGC

SIGNAL

This simple circuit provides over 70db of stable gain control for

an AGC signal range of from 0 to 30mA. This basic circuit can

be used to provide programmable fade and attack for electronic

music.

The optical isolation, linearity and low offset voltage of the

H11FXM allows the remote multiplexing of low level analog signals

from such transducers as thermocouplers, Hall effect devices,

strain gauges, etc. to a single A/D converter.

ACTIVE FILTER FINE TUNING/BAND SWITCHING

TEST EQUIPMENT - KELVIN CONTACT POLARITY

I_F1

I_F2

H11F1M

I_F

A

C

I_TEST

DEVICE

UNDER

TEST

I

_FTO

A1

A2

A & B FOR

POLARITY 1

A3

PARAMETER

SENSING

BOARD

C & D FOR

POLARITY 2

B

D

I_F

H11F1M

I_F1ADJUSTS f₁, I_F2ADJUSTS f₂

In many test equipment designs the auto polarity function uses

reed relay contacts to switch the Kelvin Contact polarity. These

reeds are normally one of the highest maintenance cost items

due to sticking contacts and mechanical problems. The totally

solid-State H11FXM eliminates these troubles while providing

faster switching.

The linearity of resistance and the low offset voltage of the

H11FXM allows the remote tuning or band-switching of active

ﬁlters without switching glitches or distortion. This schematic

illustrates the concept, with current to the H11F1M IRED’s

controlling the ﬁlter’s transfer characteristic.

H11FXM Rev. 1.0.0

www.fairchildsemi.com

6

Package Dimensions

Through Hole

Surface Mount

0.350 (8.89)

0.320 (8.13)

0.350 (8.89)

0.320 (8.13)

0.390 (9.90)

0.332 (8.43)

0.260 (6.60)

0.240 (6.10)

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

0.040 (1.02)

0.070 (1.77)

0.040 (1.02)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.200 (5.08)

0.115 (2.93)

0.012 (0.30)

0.008 (0.20)

0.100 (2.54)

0.015 (0.38)

0.025 (0.63)

0.020 (0.51)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

15°

0.035 (0.88)

0.006 (0.16)

0.100 (2.54)

0.020 (0.50)

0.016 (0.41)

0.012 (0.30)

0.4" Lead Spacing

Recommended Pad Layout for

Surface Mount Leadform

0.350 (8.89)

0.320 (8.13)

0.070 (1.78)

0.060 (1.52)

0.260 (6.60)

0.240 (6.10)

0.425 (10.79)

0.100 (2.54)

0.305 (7.75)

0.070 (1.77)

0.040 (1.02)

0.014 (0.36)

0.010 (0.25)

0.030 (0.76)

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.012 (0.30)

0.008 (0.21)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

0.425 (10.80)

0.400 (10.16)

Note:

All dimensions are in inches (millimeters).

H11FXM Rev. 1.0.0

www.fairchildsemi.com

7

Ordering Information

Order Entry Identiﬁer

(Example)

Option

Description

No option

H11F1M

H11F1SM

Standard Through Hole Device

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

S

SR2

T

H11F1SR2M

H11F1TM

V

H11F1VM

VDE 0884

TV

H11F1TVM

H11F1SVM

H11F1SR2VM

VDE 0884, 0.4" Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape and Reel

SV

SR2V

Marking Information

1

2

H11F1M

V X YY Q

6

5

3

4

Deﬁnitions

1

2

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

3

4

5

6

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

H11FXM Rev. 1.0.0

www.fairchildsemi.com

8

Carrier Tape Speciﬁcations

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

0.30 ± 0.05

4.0 ± 0.1

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

0.1 MAX

User Direction of Feed

Reﬂow Proﬁle

300

280

260

240

220

200

180

160

140

120

100

80

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

1.822°C/Sec Ramp up rate

60

40

20

33 Sec

0

60

120

180

270

360

Time (s)

H11FXM Rev. 1.0.0

www.fairchildsemi.com

9

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and

is not intended to be an exhaustive list of all such trademarks

®

ACEx

Green FPS™ e-Series™

GTO™

i-Lo™

Power-SPM™

PowerTrench

SyncFET™

The Power Franchise

®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK

Programmable Active Droop™

™

®

IntelliMAX™

QFET

TinyBoost™

TinyBuck™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroPak™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

®

TinyLogic

®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

FACT Quiet Series™

®

FACT

Motion-SPM™

®

FAST

OPTOLOGIC

SPM

®

FastvCore™

FPS™

FRFET

Global Power Resource^SM

Green FPS™

OPTOPLANAR

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

PDP-SPM™

®

UHC

®

Power220

Power247

UniFET™

VCX™

®

POWEREDGE

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in significant injury to the user.

2.

A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identiﬁcation

Product Status

Deﬁnition

This datasheet contains the design speciﬁcations for product development.

Speciﬁcations may change in any manner without notice.

Advance Information

Formative or In Design

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains ﬁnal speciﬁcations. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

No Identiﬁcation Needed

Obsolete

This datasheet contains speciﬁcations on a product that has been

discontinued by Fairchild semiconductor. The datasheet is printed for

reference information only.

Rev. I28

H11FXM Rev. 1.0.0

www.fairchildsemi.com

10


型号：	H11F2TM
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	FET Output Optocoupler, 1-Element, 7500V Isolation, DIP-6 输出元件光电
文件：	总10页 (文件大小：240K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

H11F2TM [FAIRCHILD]

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