HGT1S3N60A4S [FAIRCHILD]
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB;型号: | HGT1S3N60A4S |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB 局域网 栅 瞄准线 功率控制 晶体管 |
文件: | 总8页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Data Sheet
January 2000
File Number 4825
600V, SMPS Series N-Channel IGBT
Features
The HGTD3N60A4S, HGT1S3N60A4S and the
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
HGTP3N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
o
• Typical Fall Time. . . . . . . . . . . . . . . . . .70ns at T = 125 C
J
o
o
• 12mJ E Capability
AS
drop varies only moderately between 25 C and 150 C.
• Low Conduction Loss
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.This device has been
optimized for high frequency switch mode power
supplies.
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly Developmental Type TA49327.
Packaging
Ordering Information
JEDEC TO-252AA
PART NUMBER
HGTD3N60A4S
HGT1S3N60A4S
HGTP3N60A4
PACKAGE
BRAND
3N60A4
TO-252AA
COLLECTOR
(FLANGE)
TO-263AB
TO-220AB
3N60A4
3N60A4
G
E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.
HGT1S3N60A4S9A
JEDEC TO-263AB
Symbol
COLLECTOR
(FLANGE)
C
G
E
G
JEDEC TO-220AB
E
C
E
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
17
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
8
40
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
GES
GEM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
30
Switching Safe Operating Area at T = 150 C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
J
15A at 600V
12mJ at 3A
70
o
Single Pulse Avalanche Energy at T = 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
C
Power Dissipation Total at T = 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
o
W
D
o
o
0.56
W/ C
C
o
Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
o
300
260
C
C
L
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
600
-
CES
ECS
C
C
GE
= 10mA, V
= 0V
15
-
-
-
V
GE
o
I
V
= 600V
T = 25 C
J
-
-
250
2.0
2.7
2.2
7.0
250
-
µA
mA
V
CES
CE
o
T = 125 C
J
-
o
Collector to Emitter Saturation Voltage
V
I
V
= 3A,
T = 25 C
J
-
2.0
1.6
6.1
-
CE(SAT)
C
GE
= 15V
o
T = 125 C
-
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V = 600V
CE
4.5
-
V
GE(TH)
C
I
V
=
GE
20V
o
nA
A
GES
SSOA
T = 150 C, R = 50Ω, V
= 15V
15
-
J
G
GE
L = 200µH, V = 600V
CE
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
E
I
I
I
= 3A, L = 2.7mH
CE
12
-
-
-
-
mJ
V
AS
V
= 3A, V = 300V
CE
8.8
21
26
6
GEP
C
Q
= 3A,
= 300V
V
V
= 15V
-
25
32
-
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
g(ON)
C
CE
GE
GE
V
= 20V
o
-
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
I
V
V
-
d(ON)I
J
= 3A
CE
t
-
11
73
47
37
55
25
-
rI
= 390V
= 15V
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
-
-
d(OFF)I
R
= 50Ω
G
t
-
-
fI
L = 1mH
Test Circuit - Figure 20
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
E
E
E
-
-
ON1
ON2
OFF
-
70
35
-
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
J
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
5.5
12
110
70
37
90
50
-
MAX
8
UNITS
ns
o
t
IGBT and Diode at T = 125 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
V
= 3A
CE
t
15
ns
rI
= 390V
= 15V
= 50Ω
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
165
100
-
ns
d(OFF)I
R
G
t
ns
fI
L = 1mH
Test Circuit - Figure 20
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
E
E
E
µJ
ON1
ON2
OFF
100
80
µJ
µJ
o
Thermal Resistance Junction To Case
NOTES:
R
1.8
C/W
θJC
2. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 20.
Typical Performance Curves Unless Otherwise Specified
20
16
12
8
20
16
12
8
o
V
= 15V
T
= 150 C, R = 50Ω, V = 15V, L = 200µH
GE
GE
J
G
4
4
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
C
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
600
20
18
16
14
12
10
8
64
56
48
T
V
GE
o
C
V
= 390V, R = 50Ω, T = 125 C
CE
G
J
o
75 C
15V
t
SC
300
200
40
32
24
I
SC
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
d(ON)I
+ E
= (P - P ) / (E
)
MAX2
D
C
ON2
OFF
100
50
= CONDUCTION DISSIPATION
16
8
C
(DUTY FACTOR = 50%)
o
6
R
= 1.8 C/W, SEE NOTES
o
ØJC
T
= 125 C, R = 50Ω, L = 1mH, V
= 390V
J
G
CE
3
4
0
15
1
2
4
5
6
10
11
12
13
14
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTORTO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
20
16
12
8
20
16
12
8
DUTY CYCLE < 0.5%, V
= 12V
PULSE DURATION = 250µs
GE
DUTY CYCLE < 0.5%, V
= 15V
PULSE DURATION = 250µs
GE
o
T
= 150 C
J
o
o
T
= 125 C
T = 125 C
J
J
o
T
= 150 C
J
4
4
o
o
T
= 25 C
J
T
= 25 C
J
0
0
0
1
2
3
4
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
140
240
R
= 50Ω, L = 1mH, V
= 390V
R
T
= 50Ω, L = 1mH, V
= 390V
G
CE
G
CE
120
100
80
60
40
20
0
200
160
120
80
o
T
= 125 C, V
= 12V, V = 15V
GE
J
GE
o
= 125 C, V
= 12V OR 15V
J
GE
40
o
= 25 C, V
T
= 12V OR 15V
5
J
GE
o
T
= 25 C, V
= 12V, V
= 15V
GE
J
GE
0
1
2
3
4
5
6
1
2
3
4
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
16
32
R
= 50Ω, L = 1mH, V
= 390V
R
= 50Ω, L = 1mH, V
= 390V
G
CE
G
CE
28
24
20
16
12
8
12
8
o
o
T
= 25 C OR T = 125 C, V
= 12V
GE
J
J
o
o
T
= 25 C,T = 125 C, V
= 12V
= 15V
J
J
GE
GE
o
o
T
= 25 C,T = 125 C, V
J
J
4
o
o
T
= 25 C OR T = 125 C, V
= 15V
5
J
J
GE
0
4
1
1
2
3
4
5
6
1
2
3
4
6
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 10. TURN-ON RISETIME vs COLLECTORTO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
112
104
96
96
88
80
72
64
56
48
40
o
R
= 50Ω, L = 1mH, V
= 390V
G
CE
V
= 15V,T = 125 C
J
GE
o
T
= 125 C, V
GE
= 12V OR 15V
J
o
V
= 12V,T = 125 C
J
GE
88
o
V
= 15V,T = 25 C
J
GE
80
72
o
V
= 12V,T = 25 C
J
GE
64
o
56
T
= 25 C, V
= 12V OR 15V
5
J
GE
R
= 50Ω, L = 1mH,
V
= 390V
G
CE
48
1
2
3
4
6
1
2
3
4
5
6
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 12. FALLTIME vs COLLECTORTO EMITTER
CURRENT
16
20
o
I
= 1mA, R = 100Ω, T = 25 C
G(REF)
L
J
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 10V
CE
14
12
10
8
16
12
8
V
= 600V
CE
V
= 200V
V
= 400V
CE
CE
6
o
T
= 25 C
J
4
4
o
o
T
= 125 C
T
= -55 C
J
J
2
0
0
4
6
8
10
12
14
0
4
8
12
Q , GATE CHARGE (nC)
G
16
20
24
28
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
250
200
150
100
50
1000
R
= 50Ω, L = 1mH, V
CE
= 390V, V = 15V
GE
o
G
T
= 125 C, L = 1mH, V
= 390V, V = 15V
GE
J
CE
+ E
ON2 OFF
E
= E
ON2
+ E
OFF
TOTAL
E
= E
TOTAL
I
= 4.5A
CE
I
= 4.5A
CE
I
= 3A
CE
I
I
= 3A
CE
100
30
I
= 1.5A
CE
= 1.5A
CE
0
3
10
100
, GATE RESISTANCE (Ω)
1000
25
50
75
100
125
150
o
R
T
, CASE TEMPERATURE ( C)
G
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
700
600
500
400
300
200
100
0
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
o
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%,T = 25 C
J
PULSE DURATION = 250µs,
I
= 4.5A
CE
C
C
IES
I
= 3A
CE
RES
I
= 1.5A
C
CE
OES
0
20
40
60
80
100
8
10
12
14
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 17. CAPACITANCE vs COLLECTORTO EMITTER
VOLTAGE
FIGURE 18. COLLECTORTO EMITTER ON-STATEVOLTAGE
vs GATE TO EMITTER VOLTAGE
0
10
0.5
0.2
0.1
-1
10
10
t
1
0.05
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t / t
PEAK T = (P X Z
1
2
-2
X R ) + T
J
D
qJC
qJC C
SINGLE PULSE
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Test Circuit and Waveforms
HGTP3N60A4D
DIODE TA49369
V
GE
90%
10%
E
ON2
E
OFF
L = 1mH
DUT
I
I
CE
CE
R
= 50Ω
G
90%
10%
V
+
CE
V
= 390V
t
DD
d(ON)I
-
t
fI
t
rI
t
d(OFF)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 21.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
.
JM
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E
). The
ON2
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must not
exceed P . A 50% duty factor was used (Figure 3) and the
conduction losses (P ) are approximated by P = (V
.
D
D
JM θJC
C
3. Tips of soldering irons should be grounded.
D
4. Devices should never be inserted into or removed from
circuits with power on.
x
C
C
CE
I
)/2.
CE
5. GateVoltage Rating - Never exceed the gate-voltage
E are defined in the switching waveforms
shown in Figure 21. E is the integral of the instantaneous
ON2
and E
rating of V
. Exceeding the rated V can result in
ON2
OFF
GEM
GE
permanent damage to the oxide layer in the gate region.
power loss (I
x V ) during turn-on and E is the
6. GateTermination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
CE
CE OFF
integral of the instantaneous power loss (I x V ) during
CE CE
turn-off. All tail losses are included in the calculation for
E
; i.e., the collector current equals zero (I = 0).
CE
OFF
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET™
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
相关型号:
HGT1S3N60A4S9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明