HGTP20N60C3R [FAIRCHILD]
40A, 600V, Rugged UFS Series N-Channel IGBTs; 40A ， 600V ，坚固UFS系列N沟道IGBT的
| 型号： | HGTP20N60C3R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG20N60C3R, HGTP20N60C3R,
HGT1S20N60C3R, HGT1S20N60C3RS
S E M I C O N D U C T O R
40A, 600V, Rugged UFS Series N-Channel IGBTs
January 1997
Features
Description
o
• 40A, 600V T = 25 C
J
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
• 600V Switching SOA Capability
o
• Typical Fall Time at T = 150 C . . . . . . . . . . . . . 330ns
J
o
• Short Circuit Rating at T = 150 C. . . . . . . . . . . . . 10µs
J
• Low Conduction Loss
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
Ordering Information
PART NUMBER
HGTP20N60C3R
PACKAGE
TO-220AB
TO-247
BRAND
20N60C3R
20N60C3R
20N60C3R
20N60C3R
The data was obtained with the diode at the same T as the
J
IGBT under test.
Formerly Developmental Type TA49047.
HGTG20N60C3R
HGT1S20N60C3R
HGT1S20N60C3RS
Terminal Diagram
TO-262AA
TO-263AB
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
G
E
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
G
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
JEDEC TO-262AA
E
C
M
A
G
(FLANGE)
G
E
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 4226.1
Copyright © Harris Corporation 1997
5-3
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
40
20
80
±20
±30
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CM
GES
GEM
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
Switching Safe Operating Area at T = 150 C, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA
80A at 600V
164
J
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/ C
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
100
-40 to 150
260
mJ
ARV
STG
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T , T
C
o
J
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
L
Short Circuit Withstand Time (Note 2) at V
NOTES:
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
10
µs
GE
SC
1. Pulse width limited by maximum junction temperature.
o
2. V
= 440V, T = 150 C, R = 10Ω.
GE
CE(PK)
J
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
600
-
-
V
V
CES
C
GE
= 10mA, V
= 0V
15
-
ECS
C
GE
o
I
V
V
= BV
= BV
T
T
T
T
T
= 25 C
-
-
250
3.0
2.2
2.5
7.5
µA
mA
V
CES
CE
CE
CES
C
C
C
C
C
o
= 150 C
-
-
-
CES
o
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
V
I
= I
,
= 25 C
1.8
2.1
6.3
CE(SAT)
C
C110
= 15V
V
o
GE
= 150 C
-
V
o
V
I
= 250µA,
= 25 C
3.5
V
GE(TH)
C
V
= V
GE
CE
Gate-Emitter Leakage Current
Switching SOA (See Figure 12)
I
V
= ±20V
-
-
-
±100
nA
A
GES
GE
o
SSOA
T = 150 C
V
= 600V
80
-
J
CE(PK)
L = 1mH
R
= 10Ω
G
V
= 15V
GE
= I
Gate-Emitter Plateau Voltage
On-State Gate Charge
V
I
I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
-
-
9.0
87
-
V
nC
nC
ns
GEP
C
Q
= I
,
V
GE
= 15V
= 20V
110
G(ON)
C
C110
V
= 0.5 BV
CE
ES
V
116
34
150
GE
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C
-
D(ON)I
J
I
= I
CE
C110
t
40
-
ns
RI
V
= 0.8 BV
CE(PK)
= 15V
= 10Ω
CES
Current Turn-Off Delay Time
Current Fall Time
t
390
330
1.3
7.0
2.3
3.0
-
500
ns
V
D(OFF)I
GE
R
G
t
400
ns
FI
L = 1mH
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance
dV /dt
-
V/ns
V/ns
mJ
mJ
CE
Diode used in test circuit
dV /dt
-
CE
o
RURP1560 at 150 C
E
-
-
ON
E
OFF
o
R
0.76
C/W
θJC
NOTES:
3. dV /dt depends on the diode used and the temperature of the diode.
CE
4. Turn-On Energy Loss (E ) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
ON
edge of the input pulse and ending at the point where the collector voltage equals V
. This value of E was obtained with a
CE(ON)
ON
o
o
RURP1560 diode at T = 150 C. A different diode or temperature will result in a different E . For example with diode at T = 25 C E
ON ON
J
J
o
is about one half the value at 150 C.
5. Turn-Off Energy Loss (E ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5-4
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves
80
70
40
35
V
= 15.0V
GE
DUTY CYCLE <0.5%, V
CE
PULSE DURATION = 250µs
= 10V
o
DUTY CYCLE <0.5%, T = 25 C
C
PULSE DURATION = 250µs
60
30
25
20
15
10
12.0V
10.0V
50
40
o
o
T
= -40 C
T
= 25 C
C
C
30
20
10
0
o
T
= 150 C
9.0V
8.5V
C
5
0
8.0V
7.5V
0
1
2
3
4
5
6
7
8
9
10
6
7
8
9
10
11
12
13
14
15
V
, GATE TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
40
35
90
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
V
= 15V
GE
V
= 15V
GE
70
60
50
40
30
20
10
0
30
25
20
15
10
o
T
= -40 C
C
o
T
= 25 C
C
o
T
= 150 C
C
5
0
25
50
75
T , CASE TEMPERATURE ( C)
C
100
125
150
0
1
2
3
4
5
6
7
8
9
10
o
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE
FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
o
38
o
425
400
T
= 150 C, R = 10Ω, L = 1mH, V
CE(PK)
= 480V, V = 15V
GE
J
G
T
= 150 C, R = 10Ω, L = 1mH, V
= 480V
CE(PK)
J
G
V
= 15V
GE
36
34
32
30
375
350
325
28
26
300
275
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR EMITTER CURRENT (A)
CE
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
5-5
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves (Continued)
450
425
400
375
350
325
300
275
120
o
T
= 150 C, R = 10Ω, L = 1mH, V
CE(PK)
= 480V,
o
J
G
T
= 150 C, R = 10Ω, L = 1mH, V
CE(PK)
= 480V, V = 15V
GE
J
G
V
= 15V
GE
100
80
60
40
20
0
250
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR EMITTER CURRENT (A)
CE
FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 8. TURN OFF FALL TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
6.0
o
6.5
o
T
= 150 C, R = 10Ω, L = 1mH,
G
T
= 150 C, R = 10Ω, L = 1mH,
G
J
J
V
= 480V, V = 15V
V
= 480V, V = 15V
CE(PK)
GE
CE(PK)
GE
5.0
4.0
3.0
2.0
1.0
0
5.5
4.5
3.5
2.5
1.5
0.5
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR EMITTER CURRENT (A)
I
CE
, COLLECTOR EMITTER CURRENT (A)
CE
FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
100
100
o
o
T
= 150 C, R = 10Ω, L = 1mH, V
= 480V
J
G
CE(PK)
= 15V
T
= 150 C, R = 10Ω, V
= 15V, L = 1mH
J
G
GE
o
T
= 75 C, V
GE
C
80
60
40
20
30
20
PARTS MAY CURRENT LIMIT IN THIS REGION.
10
f
f
= 0.05/(t
D(OFF)I
+ t )
D(ON)I
MAX1
= (P - P )/(E
+ E
)
MAX2
D
C
ON
OFF
P
P
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
D
C
(DUTY FACTOR = 50%)
o
R
= 0.76 C/W
JC
θ
0
1
0
100
200
300
400
500
600
700
5
10
20
30
40
I
, COLLECTOR EMITTER CURRENT (A)
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE(PK)
CE
FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 12. SWITCHING SAFE OPERATING AREA
5-6
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves (Continued)
4500
o
I
REF = 1.376mA, R = 30Ω, T = 25 C
G
L
C
FREQUENCY = 1MHz
15
12
9
600
480
4000
3500
3000
C
IES
V
= 600V
CE
2500
2000
1500
1000
360
240
120
V
= 200V
CE
V
= 400V
CE
6
C
3
0
OES
500
0
C
RES
0
0
5
10
15
20
25
0
10
20
30
Q , GATE CHARGE (nC)
G
40
50
60
70
80
90
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
t
1
P
D
t
2
0.01
-2
10
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R
) + T
JC
θ
J
D
JC
C
θ
-3
10
-5
-4
10
-3
10
-2
10
-1
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
90%
OFF
L = 1mH
10%
V
RURP1560
GE
E
E
ON
V
CE
R
= 10Ω
G
90%
+
-
10%
D(OFF)I
V
= 480V
I
DD
CE
t
t
RI
t
FI
t
D(ON)I
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
5-7
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Handling Precautions for IGBTs Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate- Operating frequency information for
insulation damage by the electrostatic discharge of energy (Figure 11) is presented as a guide for estimating device
through the devices. When handling these devices, care performance for specific application. Other typical
a typical device
a
should be exercised to assure that the static charge built in frequency vs collector current (ICE) plots are possible using
the handler’s body capacitance is not discharged through the information shown for a typical unit in Figures 3, 5, 6, 9
the device. With proper handling and application procedures, and 10. The operating frequency plot (Figure 11) of a typical
however, IGBTs are currently being extensively used in device shows f
or f
whichever is smaller at each
MAX1
MAX2
production by numerous equipment manufacturers in point. The information is based on measurements of a
military, industrial and consumer applications, with virtually typical device and is bounded by the maximum rated
no damage problems due to electrostatic discharge. IGBT’s junction temperature.
can be handled safely if the following basic precautions are
taken:
f
is defined by f
= 0.05/(t
MAX1
+ t ). Dead-
D(OFF)I D(ON)I
MAX1
time (the denominator) has been arbitrarily held to 10% of
1. Prior to assembly into a circuit, all leads should be kept
the on- state time for a 50% duty factor. Other definitions are
shorted together either by the use of metal shorting possible. t
and t
are defined in Figure 17.
D(OFF)I
D(ON)I
springs or by the insertion into conductive material such Device turn-off delay can establish an additional frequency
as “ECCOSORBD LD26” or equivalent.
limiting condition for an application other than T .
JMAX
t
is important when controlling output ripple under a
D(OFF)I
lightly loaded condition.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
f
is defined by f
MAX2
= (P - P )/(E + E ). The
OFF ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T
-
D
D
JMAX
3. Tips of soldering irons should be grounded.
T )/R . The sum of device switching and conduction
θJC
C
losses must not exceed P . A 50% duty factor was used
(Figure 11) and the conduction losses (P ) are approxi-
C
4. Devices should never be inserted into or removed from
circuits with power on.
D
mated by P = (V
x I )/2.
C
CE CE
5. Gate Voltage Rating - Never exceed the gate-voltage
E
and E
OFF
are defined in the switching waveforms
is the integral of the instantaneous
is the inte-
rating of V
. Exceeding the rated V can result in
ON
GEM
GE
shown in Figure 17. E
power loss (I
gral of the instantaneous power loss (I x V ) during turn-
off. All tail losses are included in the calculation for E
OFF
permanent damage to the oxide layer in the gate region.
ON
CE
x V ) during turn-on and E
CE
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
CE CE
; i.e.
the collector current equals zero (I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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S E M I C O N D U C T O R
5-8
相关型号：
HGTP2N120CN_NL
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
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