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元器件品牌
IRFI620B
[FAIRCHILD]
200V N-Channel MOSFET; 200V N沟道MOSFET
元器件型号：
IRFI620B
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
200V N-Channel MOSFET
200V N沟道MOSFET
PDF文件：
总9页 (文件大小：669K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFI620B参数
查看货源
IRFI620BTU_FP001
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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0
FAIRCHILD
IRFI620G
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A)
Warning
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43
IRF
IRFI620G
Power MOSFET
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156
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16
VISHAY
IRFI620G
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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156
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1
VISHAY
IRFI620G-002PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-004PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-005PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-006
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-009
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-009PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-010PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-011PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
INFINEON
IRFI620G-012PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-013PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-015PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
INFINEON
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