IRFI640G [KERSEMI]

Power MOSFET; 功率MOSFET

IRFI640G


型号：	IRFI640G
厂家：	Kersemi Electronic Co., Ltd.
描述：	Power MOSFET 功率MOSFET
文件：	总7页 (文件大小：4318K)
下载：	下载PDF数据表文档文件

IRFI640G-003PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-004PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-009PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-010PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-013PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-015PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640G-029PBF

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI640GPBF

Power MOSFET

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11 KERSEMI

IRFI640GPBF

Power MOSFET

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35 VISHAY

IRFI640GPBF

power mosfet

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85 IRF

IRFI644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

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65 IRF

IRFI644

250V N-Channel MOSFET

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17 FAIRCHILD

IRFI644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

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10 IRF

IRFI644

250V N-Channel MOSFET

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28 FAIRCHILD

IRFI644-013

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

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