KSC5338 [FAIRCHILD]
High Voltage Power Switch Switching Application; 高压电源开关切换应用程序![KSC5338](http://pdffile.icpdf.com/pdf1/p00095/img/icpdf/KSC5338_502468_icpdf.jpg)
型号: | KSC5338 |
厂家: | ![]() |
描述: | High Voltage Power Switch Switching Application |
文件: | 总5页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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KSC5338
High Voltage Power Switch Switching
Application
•
•
High Speed Switching
Wide SOA
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
1000
CBO
450
V
CEO
EBO
9
V
I
I
5
A
C
10
A
CP
B
I
I
2
4
A
Base Current (Pulse)
A
BP
P
Collector Dissipation (T =25°C)
100
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
1000
450
9
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
= 1mA, I = 0
V
V
CBO
CEO
EBO
C
E
BV
BV
= 5mA, I =0
B
C
I =1mA, I =0
V
C
E
I
I
V
= 800V, V = 0
10
10
30
µA
µA
CBO
EBO
CB
EB
BE
Emitter Cut-off Current
V
= 9V, I = 0
C
h
h
* DC Current Gain
V
V
= 5V, I = 0.5A
15
6
FE1
FE2
CE
CE
C
= 1V, I = 2A
C
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
= 1A, I = 0.1A
0.55
0.8
0.5
V
V
CE
C
C
B
= 2A, I = 0.4A
B
V
(sat)
I
I
= 1A, I = 0.1A
1.1
1.25
V
V
BE
C
C
B
= 2A, I = 0.4A
B
C
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Turn ON Time
V
V
V
V
= 10V, f =1MHz
70
1000
14
pF
pF
ob
CB
EB
EB
CC
C
=8V, I =0, f =1MHz
C
ib
f
= 6V, I = 0.1A
MHz
ns
T
C
t
t
t
= 125V, I = 1A
200
2
ON
C
I
= 0.2A, I = - 0.2A
Storage Time
B1
B2
µs
STG
F
R =125Ω
L
Fall Time
500
ns
* Pulse Test : Pulse Width=5ms, Duty Cycle≤10%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
5
100
10
1
IB=900mA
= 800mA
IBB = 600mA
IB = 1A
VCE = 5V
I
IB = 700mA
4
3
2
1
0
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 100mA
IB = 0
0.1
0
2
4
6
8
10
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
1
10
VCE = 1V
IC = 10IB
1
VBE(sat)
VCE(sat)
0.1
0.1
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collect-Emitter Saturation Voltage
10
10
tSTG
1
VBE(sat)
VCE(sat)
1
0.1
tF
0.01
0.01
0.1
0.1
0.1
1
10
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 6. Switching Time
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
100
120
100
80
60
40
20
0
TJ=150℃
10
50υs
DC
1ms
1
5ms
0.1
0.01
10
100
1000
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Safe Operating Area
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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