KSC5386TBTU [FAIRCHILD]
Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN;
| 型号： | KSC5386TBTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN 显示器 高压 |
| 文件： | 总5页 (文件大小：765K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5386
High Voltage Color Display Horizontal
Deflection Output
Equivalent Circuit
C
(Damper Diode Built In)
•
•
•
•
High Collector-Base Breakdown Voltage : BV
=1500V
B
CBO
TO-3PF
1.Base 2.Collector 3.Emitter
High Speed Switching : t =0.1µs (Typ)
1
F
Wide S.O.A
For C-Monitor (48KHz)
50Ω typ.
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
1500
CBO
CEO
EBO
800
V
6
V
I
I
7
16
A
C
A
CP
P
Collector Dissipation (T =25°C)
50
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
ꢀꢁꢁ ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
1
Units
I
I
I
V
V
V
V
= 1400V, R = 0
mA
µA
CES
CE
CB
EB
CE
BE
= 800V, I = 0
10
CBO
EBO
E
= 4V, I = 0
40
8
250
22
mA
C
h
= 5V, I = 1.0A
C
FE
V
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Fall Time
I
I
= 5A, I = 1.2A
4.2
1.5
2
V
V
CE
BE
F
C
C
B
= 5A, I = 1.2A
B
I = 6A
V
F
t
V
= 200V, I = 4A, I = 0.8A,
0.2
µs
F
CC
C
B1
I
= -1.6A, R = 50Ω
B2
L
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Item
Max
Unit
R
Thermal Resistance, Junction to Case
2.37
°C/W
θ
jc
©2000 Fairchild Semiconductor International
Rev. B. February 2000
Typical Characteristics
©2000 Fairchild Semiconductor International
Rev. B. February 2000
Typical Characteristics (continued)
©2000 Fairchild Semiconductor International
Rev. B. February 2000
Package Dimensions
TO-3PF
5.50 ±0.20
3.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
(1.50)
°
10
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
3.30 ±0.20
4.00 ±0.20
+0.20
–0.10
0.75
5.45TYP
[5.45 ±0.30
5.45TYP
[5.45 ±0.30]
+0.20
–0.10
0.90
]
©2000 Fairchild Semiconductor International
Rev. B. February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
SyncFET™
TinyLogic™
UHC™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. B. February 2000
相关型号：
KSC5386YDTBTU
Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
FAIRCHILD
KSC5402DTF
Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
FAIRCHILD
KSC5402DTTU
Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5405J69Z
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5405TU
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明