KSC5802TBTU [FAIRCHILD]
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN;
| 型号： | KSC5802TBTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5802
High Voltage Color Display Horizontal
Deflection Output
•
•
•
•
High Breakdown Voltage : BV
=1500V
CBO
High Speed Switching : t =0.1µs (Typ.)
F
Wide S.O.A
For C-Monitor(69KHz)
TO-3PF
1.Base 2.Collector 3.Emitter
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
1500
800
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
V
V
CBO
CEO
EBO
6
V
I
I
10
A
C
30
A
CP
P
Collector Dissipation (T =25°C)
60
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
1
Units
mA
I
I
I
V
V
V
=0, V = 1400V
CES
BE
CB
EB
CE
= 800V, I = 0
10
1
uA
CBO
EBO
E
= 4V, I = 0
mA
C
h
h
V
V
= 5V, I = 1A
15
7
48
10
FE1
FE2
CE
CE
C
= 5V, I = 6A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
I
I
= 6A, I = 1.5A
3
V
V
CE
C
C
B
= 6A, I = 1.5A
1.5
0.3
BE
B
t
V
= 200V, I = 6A
0.1
µs
F
CC
C
I
= 1.2A, I = - 2.4A
B1
B2
R = 33.3Ω
L
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Item
Max
Unit
R
Thermal Resistance, Junction to Case
2.08
°C/W
θjC
©2001 Fairchild Semiconductor Corporation
Rev. A1, December 2001
Typical Characteristics
10
100
10
1
VCE = 5V
IB = 2.0A
1.8A
125oC
75oC
8
6
4
2
0
1.6A
1.4A
25oC
-25oC
1.2A
1.0A
0.8A
0.6A
0.4A
IB = 0.2A
0.1
1
10
0
2
4
6
8
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
104
IC = 3IB
IC = 3IB
125oC
75oC
103
102
101
25oC
1
-25oC
-25oC
25oC
75oC
125oC
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage 1
Figure 4. Base-Emitter Saturation Voltage 1
104
IC = 5IB
IC = 5IB
125oC
75oC
25oC
103
102
101
-25oC
1
-25oC
25oC
75oC
125oC
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage 2
Figure 6. Base-Emitter Saturation Voltage 2
©2001 Fairchild Semiconductor Corporation
Rev. A1, December 2001
Typical Characteristics (Continued)
100
10
10
VCE = 5V
8
6
4
2
0
I
C MAX
1
0.1
0.01
SINGLE PULSE
C = 25oC
T
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2000
1
10
100
1000
VBE[V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Base-Emitter On Voltage
Figure 8. Safe Operating Area
100
10
1
80
IB2 = - 1A, Const
(at IC >= 5A)
70
60
50
40
30
20
10
0
IC = 5IB1 = - 5IB2
L = 500µH
SINGLE PULSE
0.1
10
0
25
50
75
100
125
150
175
100
1000
10000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
Figure 10. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, December 2001
Package Demensions
TO-3PF
5.50 ±0.20
3.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
(1.50)
°
10
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
3.30 ±0.20
4.00 ±0.20
+0.20
–0.10
0.75
5.45TYP
[5.45 ±0.30
5.45TYP
[5.45 ±0.30]
+0.20
–0.10
0.90
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, December 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FAST®
FASTr™
FRFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
SMART START™
STAR*POWER™
Stealth™
VCX™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
FACT™
FACT Quiet Series™
UHC™
UltraFET®
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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●
High Breakdown Voltage:
BV =1500V
Quality and reliability
CBO
This pagePrint version
●
High Speed Switching; t =0.1µs (Typ.)
F
Design tools
●
●
Wide S.O.A.
For C-Monitor (69KHz)
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High Voltage Color Display Horizontal
Deflection Output
(No Damper Diode)
company
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Product status/pricing/packaging
Product
Product status Pricing* Package type Leads Packing method
TO-3PF
TO-3PF
TO-3PF
TO-3PF
TO-3PF
KSC5802TBTU
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$1.58
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KSC5802ATBTU
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KSC5802SDTBTU
KSC5802ASDTBTU
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
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