KSD1621_05 [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | KSD1621_05 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总6页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2005
KSD1621
NPN Epitaxial Silicon Transistor
High Current Driver Applications
•
•
•
•
Low Collector-Emitter Saturation Voltage
Large Current Capacity and Wide SOA
Fast Switching Speed
Complement to KSB1121
Marking
1 6
P Y
2 1
W W
SOT-89
1
Weekly code
Year code
hFE grage
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
25
6
V
V
V
A
VCEO
VEBO
IC
2
PC
PC*
Collector Power Dissipation
500
1.3
mW
W
TJ
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
-55 ~ 150
Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
Typ.
Max.
Units
IC = 10µA, IE = 0
30
25
6
V
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VBE = 4V, IC = 0
VCE = 2V, IC = 0.1A
V
V
100
100
560
nA
nA
IEBO
Emitter Cut-off Current
hFE1
hFE2
DC Current Gain
100
65
V
CE = 2V, IC = 1.5A
VCE (sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.5A, IB = 75mA
IC = 1.5A, IB = 75mA
0.18
0.85
0.4
1.2
V
V
V
BE (sat)
©2005 Fairchild Semiconductor Corporation
KSD1621 Rev. B2
1
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Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted
Symbol
Parameter
Current Gain Bandwidth product
Output Capacitance
Turn On Time *
Test Condition
VCE = 10V, IC = 50mA
VCB = 10V, IE = 0, f = 1MHz
VCC = 12V, VBE = 5V
Min.
Typ.
150
19
Max.
Units
MHz
pF
fT
Cob
tON
tSTG
tF
60
ns
I
B1 = -IB2 = 25mA
Storage Time *
500
25
ns
IC = 0.5A, RL = 25Ω
Fall Time *
ns
hFE Classification
Classification
R
S
T
U
hFE
100 ~ 200
140 ~ 280
200 ~ 400
280 ~ 560
Package Marking and Ordering Information
Device Marking
Device
KSD1621
Package
SOT-89
Reel Size
Tape Width
Quantity
4,000
1621
13”
--
2
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KSD1621 Rev. B2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
2.0
1000
IB = 20mA
IB = 50mA IB = 30mA
VCE= 2V
1.6
1.2
0.8
0.4
0.0
IB = 10mA
IB = 8mA
IB = 6mA
100
10
1
IB = 4mA
IB = 2mA
IB = 0
0.0
0.2
0.4
0.6
0.8
1.0
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. DCollector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
VCE = 2V
IC = 10 IB
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
1000
1000
VCE = 10V
IE=0
f = 1MHz
100
10
1
100
10
0.1
1
10
100
0.1
1
VCB [V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
3
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KSD1621 Rev. B2
Typical Performance Characteristics (Continued)
Figure 7. Safe Operating Area
Figure 8. Power Derating
10
1.6
1.2
0.8
0.4
0.0
IC MAX. (Pulse)
IC MAX. (DC)
1
m
s
M
o
u
n
t
e
d
1
o
n
C
e
r
a
m
i
c
B
o
a
r
d
(
2
5
0
m
0.1
T =25oC
m
Saingle Pulse
0
×
.
8
m
Mounted on Ceramic Board
m
)
(250mm2 × 0.8mm)
0.01
0
50
100
150
200
0.1
1
10
100
Ta[oC], AMBIENT TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
4
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KSD1621 Rev. B2
Mechanical Dimensions
SOT-89
1.50 0.20
4.50 0.20
1.65 0.10
(0.40)
C0.2
0.50 0.10
0.40 0.10
+0.10
–0.05
0.40
1.50 TYP 1.50 TYP
Dimensions in Millimeters
5
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KSD1621 Rev. B2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
6
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KSD1621 Rev. B2
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