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MMBFJ270_08 [FAIRCHILD]

P-Channel Switch; P沟道开关
MMBFJ270_08
型号： MMBFJ270_08
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

P-Channel Switch
P沟道开关

开关
文件： 总5页 (文件大小：414K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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August 2008  
MMBFJ270  
P-Channel Switch  
Features  
•
This device is designed for low level analog switching sample and hold  
circuits and chopper stabilized amplifiers.  
G
•
Sourced from process 88.  
S
D
SOT-23  
Mark : 61S  
Absolute Maximum Ratings (Note1)  
Symbol Parameter  
T = 25°C unless otherwise noted  
a
Value  
-30  
Units  
V
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
VGS  
30  
V
IGF  
50  
mA  
°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
225  
1.8  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient (Note2)  
556  
°C/W  
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
MIN  
MAX  
Units  
Off Characteristics (Note3)  
V(BR)GSS  
IGSS  
Gate-Source Breakdwon Voltage  
Gate Reverse Current  
IG = 1.0µA, VDS = 0  
30  
V
pA  
V
VGS = 20V, VDS = 0  
200  
2.0  
VGS(off)  
Gate-Source Cutoff Voltage  
VDS = -15V, ID = -1.0nA  
0.5  
On Characteristics (Note3)  
IDSS  
gfs  
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0  
-2.0  
-15  
15000  
200  
mA  
Forward Transferconductance  
VGS = 0V, VDS = 15V, f = 1.0kHz  
6000  
µmhos  
µmhos  
goss  
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz  
tance  
Note3 : Short duration test pulse used to minimize self-heating effect.  
© 2008 Fairchild Semiconductor Corporation  
MMBFJ270 Rev. B  
www.fairchildsemi.com  
1
Typical Characteristics  
Common Drain-Source  
Parameter Interactions  
-20  
100  
50  
1,000  
500  
T
V
= 25°C  
A
TYP  
= 4.5 V  
GS(off)  
0.5 V  
1.0 V  
-16  
-12  
-8  
I DSS  
V GS = 0 V  
rDS  
g
fs  
10  
5
100  
50  
1.5 V  
2.0 V  
IDSS , gfs @ VDS = 15V,  
VGS= 0 PULSED  
rDS @ -100 mV, VGS = 0  
VGS(off) @ VDS = - 15V,  
-4  
3.5 V  
3.0 V  
2.5 V  
I
= - 1.0 A  
D
1
10  
0
1
2
5
10  
0
-1  
-2  
-3  
-4  
-5  
VGS (OFF) - GATE CUTOFF VOLTAGE (V)  
VDS - DRAIN-SOURCE VOLTAGE (V)  
Transfer Characteristics  
Transfer Characteristics  
-32  
16  
12  
8
V DS = - 15 V  
V DS = - 15 V  
V
= - 4.5 V  
GS(off)  
- 55°C  
V
= - 4.5 V  
GS(off)  
- 55°C  
-24  
-16  
-8  
25°C  
25°C  
125°C  
125°C  
V
= 2.5 V  
GS(off)  
- 55°C  
25°C  
V
= 2.5 V  
GS(off)  
- 55°C  
25°C  
125°C  
125°C  
4
0
0
0
1
2
3
4
0
1
2
3
4
VGS - GATE-SOURCE VOLTAGE (V)  
VGS - GATE-SOURCE VOLTAGE (V)  
Normalized Drain Resistance  
vs Bias Voltage  
Output Conductance  
vs Drain Current  
100  
50  
1000  
100  
10  
f = 1.0 kHz  
V
@ 5.0V, 10 A  
GS(off)  
-5.0V  
-10V  
-5.0V  
rDS  
20  
10  
5
rDS  
=
VGS  
-10V  
____  
1 -  
-20V  
V
= - 4.5V  
-20V  
GS(off)  
VGS(off)  
V
= - 2.5V  
GS(off)  
2
1
1
_ 0.01  
_0.1  
_1  
_10  
0
0.2  
0.4  
0.6  
0.8  
1
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)  
I D - DRAIN CURRENT (mA)  
© 2008 Fairchild Semiconductor Corporation  
MMBFJ270 Rev. B  
www.fairchildsemi.com  
2
Typical Characteristics (Continued)  
Capacitance vs Voltage  
Transconductance  
vs Drain Current  
100  
f = 0.1 - 1.0 MHz  
10  
V
= 2.5V  
GS(off)  
25°C  
5
V
= 6.0V  
GS(off)  
C
(V  
= -15V)  
DS  
is  
C
- 55°C  
25°C  
125°C  
10  
5
1
(V  
= -15V)  
DS  
rs  
0.5  
V
= -15V  
DG  
f = 1.0 kHz  
1
0.1  
_ 0.1  
_1  
_10  
_ 100  
0
4
8
12  
16  
20  
VGS - GATE-SOURCE VOLTAGE (V)  
ID - DRAIN CURRENT (mA)  
Noise Voltage vs Frequency  
Channel Resistance  
vs Temperature  
100  
50  
1000  
500  
V
V
= -100 mV  
DS  
GS  
V
V
V
= 2.5V  
= 4.5V  
= 8.0V  
I
= - 0.2 mA  
GS(off)  
GS(off)  
GS(off)  
= 0  
D
10  
5
I
= 5.0 mA  
D
100  
50  
V
= - 15V  
DG  
BW = 6.0 Hz @ f = 10 Hz, 100 Hz  
= 0.2f @ f ≥ 1.0 kHz  
1
10  
0.01  
0.1  
1
10  
100  
-50  
0
50  
100  
150  
T A - AMBIENT TEMPERATURE (oC)  
f - FREQUENCY (kHz)  
Power Derating  
300  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
175  
Tc[oC], CASE TEMPERATURE  
© 2008 Fairchild Semiconductor Corporation  
MMBFJ270 Rev. B  
www.fairchildsemi.com  
3
Package Dimensions  
SOT-23  
0.40 0.03  
0.03~0.10  
0.38 REF  
+0.05  
–0.023  
0.40 0.03  
0.12  
0.96~1.14  
2.90 0.10  
0.95 0.03 0.95 0.03  
1.90 0.03  
0.508REF  
Dimensions in Millimeters  
© 2008 Fairchild Semiconductor Corporation  
MMBFJ270 Rev. B  
www.fairchildsemi.com  
4
© 2008 Fairchild Semiconductor Corporation  
MMBFJ270 Rev. B  
www.fairchildsemi.com  
5

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