MMBT100AS62Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | MMBT100AS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
PN100
MMBT100
PN100A
MMBT100A
C
E
TO-92
C
B
B
SOT-23
Mark: NA / NA1
E
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
TA=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
45
75
V
V
Collector-Base Voltage
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN100A
*MMBT100A
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
75
45
V
V
V
I = 10 A, I = 0
µ
C
B
Collector-Emitter Breakdown Voltage* IC = 1 mA, IE = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
6.0
I = 10 A, I = 0
µ
E
C
VCB = 60 V
50
50
50
nA
nA
nA
ICES
VCE = 40 V
VEB = 4 V
IEBO
ON CHARACTERISTICS
hFE
DC Current Gain
80
I = 100 A, VCE = 1.0 V
µ
100
100A
100
C
240
100
300
100
100
100
450
600
IC = 10 mA, VCE = 1.0 V
100A
IC = 100 mA, VCE = 1.0 V*
IC = 150 mA, VCE = 5.0 V*
350
100
100A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.2
0.4
0.85
1.0
V
V
V
V
VCE(sat)
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
VCE = 20 V, IC = 20 mA
VCB = 5.0 V, f = 1.0 MHz
250
MHz
pF
Output Capacitance
4.5
Cobo
NF
Noise Figure
5.0
4.0
dB
dB
I = 100 A, VCE = 5.0 V,
µ
100
100A
C
R = 2.0 k , f = 1.0 kHz
Ω
G
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
400
0.4
0.3
0.2
0.1
Vce = 5V
125 °C
β = 10
300
200
100
0
25 °C
25 °C
- 40 °C
125 °C
- 40 °C
10
20 30
50
100
200 300 500
1
10
100
400
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
0.8
25 °C
25 °C
0.6
125 °C
125 °C
0.4
V
= 5V
β
= 10
CE
0.2
0.1
1
10
100
500
1
10
100
300
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Voltage
Collector-Cutoff Current
vs Ambient Temperature
100
10
1
10
f = 1.0 MHz
VCB = 60V
Cib
1
Cob
0.1
0.1
25
50
75
100
125
º
150
0.1
1
10
100
TA- AMBIENT TEMPERATURE ( C)
V
- COLLECTOR VOLTAGE(V)
ce
Power Dissipation vs
Ambient Temperature
Switching Times vs
Collector Current
700
600
500
400
300
200
100
0
300
270
240
210
180
150
120
90
t
s
TO-92
IB1 = IB2 = Ic / 10
SOT-23
V
= 10 V
cc
t
f
t
r
60
30
t
d
0
10
20
30
50
100
200 300
0
25
50
75
100
125
150
TEMPERATURE (oC)
IC - COLLECTOR CURRENT (mA)
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