MMBTA56 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | MMBTA56 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
MPSA56
MMBTA56
PZTA56
C
C
E
E
C
B
TO-92
C
B
SOT-23
Mark: 2G
B
SOT-223
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
80
80
V
V
Collector-Base Voltage
Emitter-Base Voltage
4.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA56
*MMBTA56
**PZTA56
PD
Total Device Dissipation
625
5.0
350
2.8
1,000
8.0
mW
°
mW/ C
°
Derate above 25 C
Thermal Resistance, Junction to Case
83.3
°
Rθ
C/W
JC
Thermal Resistance, Junction to Ambient
200
357
125
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
80
80
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
4.0
V
0.1
0.1
µA
µA
ICBO
Collector-Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
100
100
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
1.2
V
V
VCE(sat)
VBE(on)
IC = 100 mA, VCE = 1.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
50
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
300
250
200
150
100
50
0.8
0.6
0.4
0.2
0
VCE = 1V
β
= 10
125 °C
25 °C
25 °C
- 40 ºC
- 40 ºC
125 °C
0.001
0.01
0.1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (A)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
Base Emitter ON Voltage vs
Collector Current
1.2
1
β
= 10
1
0.8
0.6
0.4
- 40 ºC
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
25 °C
125 °C
125 °C
V
= 1V
CE
10
100
1000
0.1
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
I C- COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Collector Saturation Region
10
10
V
= 60Vz
T
= 25°C
8
6
4
2
0
CB
A
1
I
=
1 mA
100 mA
10 mA
C
0.1
0.01
0.001
25
50
75
100
125
3000
5000
10000
20000 30000
50000
º
TA- AMBIENT TEMPERATURE ( C)
I
- BASE CURRENT (uA)
B
Input and Output Capacitance
vs Reverse Voltage
Gain Bandwidth Product
vs Collector Current
40
f = 1.0 MHz
V
= 5V
CE
100
30
20
10
0
C
ib
C
ob
1
10
20
50
100
0.1
1
10
100
I
C - COLLECTOR CURRENT (mA)
V
- COLLECTOR VOLTAGE(V)
CE
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
SOT-223
TO-92
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
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