MOC8100SV-M [FAIRCHILD]
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6;型号: | MOC8100SV-M |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6 输出元件 |
文件: | 总14页 (文件大小:3374K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
May 2013
TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
General Description
■ UL Recognized (File # E90700)
The MOC8100M, TIL111M, and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
■ VDE Recognized (File #102497 for white package)
– Add Option V (e.g., TIL111VM)
Applications
■ Power Supply Regulators
■ Digital Logic Inputs
■ Microprocessor Inputs
■ Appliance Sensor Systems
■ Industrial Controls
Schematic
Package Outlines
Figure 2. Package Outlines
www.fairchildsemi.com
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
4 EMITTER
NC 3
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
Safety and Insulation Ratings
As per IEC60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max. Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 V
For Rated Mains Voltage < 300 V
Climatic Classification
I–IV
I–IV
RMS
RMS
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
PR
V
x 1.875 = V , 100% Production Test with
IORM
PR
t
= 1 s, Partial Discharge < 5 pC
m
Input to Output Test Voltage, Method a,
x 1.5 = V , Type and Sample Test with
1275
V
IORM
PR
t
= 60 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
R
Insulation Resistance at T , V = 500 V
10
IO
S
IO
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
Total Device
T
Storage Temperature
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
Operating Temperature
Lead Solder Temperature
OPR
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
2.94
Emitter
I
DC/Average Forward Input Current
Reverse Input Voltage
All
60
3
mA
V
F
V
TIL111M
R
MOC8100M, TIL117M
6
I (pk)
Forward Current – Peak (300 µs, 2% Duty Cycle)
All
All
3
A
F
P
LED Power Dissipation @ T = 25°C
120
1.41
mW
D
A
Derate Above 25°C
mW/°C
Detector
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Emitter-Base Voltage
All
30
70
V
V
V
CEO
CBO
ECO
EBO
All
TIL111M, TIL117M
7
All
All
7
P
Detector Power Dissipation @ T = 25°C
150
1.76
mW
D
A
Derate Above 25°C
mW/°C
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
3
Electrical Characteristics
T = 25°C unless otherwise specified.
A
Individual Component Characteristics
Symbol
Emitter
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
V
Input Forward
Voltage
I = 16 mA
T = 25°C
TIL111M
1.2
1.2
1.4
1.4
V
F
F
A
I = 10 mA for T = 0°C to 70°C
MOC8100M,
TIL117M
F
A
MOC8100M,
T = -55°C
1.32
1.10
A
I = 16 mA for
F
T = +100°C
A
TIL117M
I
Reverse Leakage
Current
V = 3.0 V
TIL111M, TIL117M
MOC8100M
0.001 10
0.001 10
µA
µA
R
R
V = 6.0 V
R
Detector
BV
BV
BV
BV
Collector-Emitter
Breakdown Voltage
I = 1.0 mA, I = 0
All
30
70
7
100
120
10
V
V
V
V
CEO
CBO
EBO
ECO
C
F
Collector-Base
Breakdown Voltage
I = 10 µA, I = 0
All
All
C
F
Emitter-Base
Breakdown Voltage
I = 10 µA, I = 0
E F
Emitter-Collector
I = 100 µA, I = 0
TIL111M, TIL117M
7
10
F
F
Breakdown Voltage
I
Collector-Emitter
Dark Current
V
V
V
= 10 V, I = 0
TIL111M, TIL117M
MOC8100M
1
50
25
50
nA
nA
µA
CEO
CE
CE
CE
F
= 5 V, T = 25°C
0.5
0.2
A
= 30 V, I = 0, T = 70°C
TIL117M,
F
A
MOC8100M
I
I
Collector-Base Dark
Current
V
V
V
= 10 V
= 5 V
TIL111M, TIL117M
MOC8100M
All
20
10
nA
nA
pF
CBO
CBO
CB
CB
CE
C
Capacitance
= 0 V, f = 1 MHz
8
CE
*All Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
4
Electrical Characteristics (Continued)
T = 25°C unless otherwise specified.
A
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min Typ* Max Unit
DC Characteristics
CTR
Current Transfer Ratio,
Collector to Emitter
I = 10 mA, V = 10 V
TIL117M
50
50
30
%
%
CE
F
CE
I = 1 mA, V = 5 V
MOC8100M
F
CE
I = 1 mA, V = 5 V,
F
CE
T = 0°C to +70°C
A
I
On-State Collector Current I = 16 mA, V = 0.4 V
(Phototransistor Operation)
TIL111M
2
7
mA
µA
V
C(ON)
F
CE
On-State Collector Current I = 16 mA, V = 0.4 V
F
CB
(Photodiode Operation)
V
Collector-Emitter Saturation I = 500 µA, I = 10 mA
TIL117M
TIL111M
0.4
0.4
0.5
CE (SAT)
C
F
Voltage
I = 2 mA, I = 16 mA
C
F
I = 100 µA, I = 1 mA
MOC8100M
C
F
AC Characteristics
t
Turn-On Time
I = 2 mA, V = 10 V,
MOC8100M
TIL117M
20
10
20
10
µs
µs
µs
µs
ON
C
CC
R = 100 Ω (Fig. 13)
L
t
Turn-Off Time
MOC8100M
TIL117M
OFF
t
Rise Time
Fall Time
Rise Time
MOC8100M
TIL117M
2
2
r
t
f
t
I
= 2 mA, V = 10 V,
TIL111M
10
r
C(ON)
CC
(Phototransistor Operation) R = 100 Ω (Fig. 13)
L
t
Fall Time
f
(Phototransistor Operation)
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
V
R
C
Input-Output Isolation Voltage
Isolation Resistance
f = 60 Hz, t = 1 s
7500
V
AC(PK)
ISO
ISO
ISO
11
V
= 500 VDC
10
Ω
I-O
Isolation Capacitance
V
= 0, f = 1 MHz
0.2
pF
I-O
*All Typical values at T = 25°C.
A
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
5
Typical Performance Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0 V
Normalized to
= 10 mA
CE
= 25˚C
1.7
1.6
1.5
1.4
I
A
F
T
= -55°C
= 25°C
= 100°C
A
1.3
1.2
1.1
1.0
T
A
A
T
0
2
4
6
8
10
12
14
16
18
20
1
10
100
I
– FORWARD CURRENT (mA)
F
I
F
– LED FORWARD CURRENT (mA)
Figure 4. Normalized CTR vs. Forward Current
Figure 3. LED Forward Voltage vs. Forward Current
1.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
I
F
= 20 mA
I
= 5 mA
F
I
F
= 10 mA
I
= 5 mA
F
1.0
0.8
0.6
0.4
0.2
I
I
= 10 mA
F
= 20 mA
F
V
= 5.0 V
CE
Normalized to:
I
T
= 10 mA
= 25˚C
F
A
10
100
1000
R
– BASE RESISTANCE (kΩ)
BE
-60
-40
-20
0
20
40
60
80
100
Figure 6. CTR vs. RBE (Unsaturated)
T
A
– AMBIENT TEMPERATURE (˚C)
Figure 5. Normalized CTR vs. Ambient Temperature
100
T
= 25˚C
A
1.0
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 0.3 V
CE
I
= 20 mA
F
I
F
= 2.5 mA
I
= 10 mA
= 5 mA
F
0.1
0.01
I
I
F
= 20 mA
F
I
F
= 5 mA
I
F
= 10 mA
0.001
10
100
1000
0.01
0.1
1
10
R
BE
– BASE RESISTANCE (kΩ)
I - COLLECTOR CURRENT (mA)
C
Figure 7. CTR vs. RBE (Saturated)
Figure 8. Collector-Emitter Saturation Voltage vs Collector Current
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
1000
I
V
T
= 10 mA
F
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
= 10 V
CC
= 25˚C
A
V
CC =
10 V
I
C
= 2 mA
R
L
= 100 Ω
100
10
1
T
f
T
off
T
on
T
r
10
100
1000
10000
100000
0.1
R
– BASE RESISTANCE (kΩ)
BE
0.1
1
10
100
R – LOAD RESISTOR (kΩ)
Figure 10. Normalized t vs. R
on
BE
Figure 9. Switching Speed vs. Load Resistor
V
= 10 V
C
CE
= 25°
1.4
T
A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
100
10
1
V
I
R
10 V
CC =
= 2 mA
0.1
C
= 100 Ω
L
0.01
0.001
10
100
1000
10000
100000
0
20
40
60
80
100
R
BE
– BASE RESISTANCE (kΩ)
T
A
– AMBIENTTEMPERATURE (°C)
Figure 11. Normalized t vs. R
off
BE
Figure 12. Dark Current vs. Ambient Temperature
TEST CIRCUIT
WAVEFORMS
V
CC = 10 V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 13. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
7
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 s
Time above
183°C = 90 s
°C
1.822°C/s Ramp up rate
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 14. Reflow Profile
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
8
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
TIL111M
TIL111SM
Standard Through-Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
TIL111SR2M
TIL111TM
V
TIL111VM
VDE 0884
TV
TIL111TVM
TIL111SVM
TIL111SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
TIL111
X YY Q
6
V
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One-digit year code, e.g., ‘3’
Two-digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
9
Package Dimensions
Figure 15. 6-Pin DIP Through Hole
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
10
Package Dimensions (Continued)
Figure 16. 6-Pin DIP Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
11
Package Dimensions (Continued)
Figure 17. 6-Pin DIP 0.4” Lead Spacing
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
12
Carrier Tape Specification
12.0 0.1
2.0 0.05
4.5 0.20
Ø1.5 MIN
1.75 0.10
4.0 0.1
0.30 0.05
11.5 1.0
24.0 0.3
9.1 0.20
21.0 0.1
Ø1.5 0.1/-0
10.1 0.20
User Direction of Feed
0.1 MAX
Figure 18. Carrier Tape Specification
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
13
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
14
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