MOC8100SV-M [FAIRCHILD]

1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6;
MOC8100SV-M
型号: MOC8100SV-M
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6

输出元件
文件: 总14页 (文件大小:3374K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
May 2013  
TIL111M, TIL117M, MOC8100M  
General Purpose 6-Pin Phototransistor Optocouplers  
Features  
General Description  
UL Recognized (File # E90700)  
The MOC8100M, TIL111M, and TIL117M optocouplers  
consist of a gallium arsenide infrared emitting diode  
driving a silicon phototransistor in a 6-pin dual in-line  
package.  
VDE Recognized (File #102497 for white package)  
– Add Option V (e.g., TIL111VM)  
Applications  
Power Supply Regulators  
Digital Logic Inputs  
Microprocessor Inputs  
Appliance Sensor Systems  
Industrial Controls  
Schematic  
Package Outlines  
Figure 2. Package Outlines  
www.fairchildsemi.com  
ANODE 1  
6 BASE  
CATHODE 2  
5 COLLECTOR  
4 EMITTER  
NC 3  
Figure 1. Schematic  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
Safety and Insulation Ratings  
As per IEC60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Symbol  
Parameter  
Min.  
Typ.  
Max. Unit  
Installation Classifications per DIN VDE 0110/1.89 Table 1  
For Rated Mains Voltage < 150 V  
For Rated Mains Voltage < 300 V  
Climatic Classification  
I–IV  
I–IV  
RMS  
RMS  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
V
Input to Output Test Voltage, Method b,  
1594  
PR  
V
x 1.875 = V , 100% Production Test with  
IORM  
PR  
t
= 1 s, Partial Discharge < 5 pC  
m
Input to Output Test Voltage, Method a,  
x 1.5 = V , Type and Sample Test with  
1275  
V
IORM  
PR  
t
= 60 s, Partial Discharge < 5 pC  
m
V
Maximum Working Insulation Voltage  
Highest Allowable Over Voltage  
External Creepage  
850  
6000  
7
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
Ω
External Clearance  
7
Insulation Thickness  
0.5  
9
R
Insulation Resistance at T , V = 500 V  
10  
IO  
S
IO  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
2
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Device  
Value  
Units  
Total Device  
T
Storage Temperature  
All  
All  
All  
All  
-40 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
Operating Temperature  
Lead Solder Temperature  
OPR  
T
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate Above 25°C  
2.94  
Emitter  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
All  
60  
3
mA  
V
F
V
TIL111M  
R
MOC8100M, TIL117M  
6
I (pk)  
Forward Current – Peak (300 µs, 2% Duty Cycle)  
All  
All  
3
A
F
P
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
D
A
Derate Above 25°C  
mW/°C  
Detector  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
Emitter-Base Voltage  
All  
30  
70  
V
V
V
CEO  
CBO  
ECO  
EBO  
All  
TIL111M, TIL117M  
7
All  
All  
7
P
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
D
A
Derate Above 25°C  
mW/°C  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
3
Electrical Characteristics  
T = 25°C unless otherwise specified.  
A
Individual Component Characteristics  
Symbol  
Emitter  
Parameter  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
V
Input Forward  
Voltage  
I = 16 mA  
T = 25°C  
TIL111M  
1.2  
1.2  
1.4  
1.4  
V
F
F
A
I = 10 mA for T = 0°C to 70°C  
MOC8100M,  
TIL117M  
F
A
MOC8100M,  
T = -55°C  
1.32  
1.10  
A
I = 16 mA for  
F
T = +100°C  
A
TIL117M  
I
Reverse Leakage  
Current  
V = 3.0 V  
TIL111M, TIL117M  
MOC8100M  
0.001 10  
0.001 10  
µA  
µA  
R
R
V = 6.0 V  
R
Detector  
BV  
BV  
BV  
BV  
Collector-Emitter  
Breakdown Voltage  
I = 1.0 mA, I = 0  
All  
30  
70  
7
100  
120  
10  
V
V
V
V
CEO  
CBO  
EBO  
ECO  
C
F
Collector-Base  
Breakdown Voltage  
I = 10 µA, I = 0  
All  
All  
C
F
Emitter-Base  
Breakdown Voltage  
I = 10 µA, I = 0  
E F  
Emitter-Collector  
I = 100 µA, I = 0  
TIL111M, TIL117M  
7
10  
F
F
Breakdown Voltage  
I
Collector-Emitter  
Dark Current  
V
V
V
= 10 V, I = 0  
TIL111M, TIL117M  
MOC8100M  
1
50  
25  
50  
nA  
nA  
µA  
CEO  
CE  
CE  
CE  
F
= 5 V, T = 25°C  
0.5  
0.2  
A
= 30 V, I = 0, T = 70°C  
TIL117M,  
F
A
MOC8100M  
I
I
Collector-Base Dark  
Current  
V
V
V
= 10 V  
= 5 V  
TIL111M, TIL117M  
MOC8100M  
All  
20  
10  
nA  
nA  
pF  
CBO  
CBO  
CB  
CB  
CE  
C
Capacitance  
= 0 V, f = 1 MHz  
8
CE  
*All Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
4
Electrical Characteristics (Continued)  
T = 25°C unless otherwise specified.  
A
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min Typ* Max Unit  
DC Characteristics  
CTR  
Current Transfer Ratio,  
Collector to Emitter  
I = 10 mA, V = 10 V  
TIL117M  
50  
50  
30  
%
%
CE  
F
CE  
I = 1 mA, V = 5 V  
MOC8100M  
F
CE  
I = 1 mA, V = 5 V,  
F
CE  
T = 0°C to +70°C  
A
I
On-State Collector Current I = 16 mA, V = 0.4 V  
(Phototransistor Operation)  
TIL111M  
2
7
mA  
µA  
V
C(ON)  
F
CE  
On-State Collector Current I = 16 mA, V = 0.4 V  
F
CB  
(Photodiode Operation)  
V
Collector-Emitter Saturation I = 500 µA, I = 10 mA  
TIL117M  
TIL111M  
0.4  
0.4  
0.5  
CE (SAT)  
C
F
Voltage  
I = 2 mA, I = 16 mA  
C
F
I = 100 µA, I = 1 mA  
MOC8100M  
C
F
AC Characteristics  
t
Turn-On Time  
I = 2 mA, V = 10 V,  
MOC8100M  
TIL117M  
20  
10  
20  
10  
µs  
µs  
µs  
µs  
ON  
C
CC  
R = 100 Ω (Fig. 13)  
L
t
Turn-Off Time  
MOC8100M  
TIL117M  
OFF  
t
Rise Time  
Fall Time  
Rise Time  
MOC8100M  
TIL117M  
2
2
r
t
f
t
I
= 2 mA, V = 10 V,  
TIL111M  
10  
r
C(ON)  
CC  
(Phototransistor Operation) R = 100 Ω (Fig. 13)  
L
t
Fall Time  
f
(Phototransistor Operation)  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min.  
Typ.*  
Max.  
Units  
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60 Hz, t = 1 s  
7500  
V
AC(PK)  
ISO  
ISO  
ISO  
11  
V
= 500 VDC  
10  
Ω
I-O  
Isolation Capacitance  
V
= 0, f = 1 MHz  
0.2  
pF  
I-O  
*All Typical values at T = 25°C.  
A
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
5
Typical Performance Characteristics  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
T
= 5.0 V  
Normalized to  
= 10 mA  
CE  
= 25˚C  
1.7  
1.6  
1.5  
1.4  
I
A
F
T
= -55°C  
= 25°C  
= 100°C  
A
1.3  
1.2  
1.1  
1.0  
T
A
A
T
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1
10  
100  
I
– FORWARD CURRENT (mA)  
F
I
F
– LED FORWARD CURRENT (mA)  
Figure 4. Normalized CTR vs. Forward Current  
Figure 3. LED Forward Voltage vs. Forward Current  
1.4  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
I
F
= 20 mA  
I
= 5 mA  
F
I
F
= 10 mA  
I
= 5 mA  
F
1.0  
0.8  
0.6  
0.4  
0.2  
I
I
= 10 mA  
F
= 20 mA  
F
V
= 5.0 V  
CE  
Normalized to:  
I
T
= 10 mA  
= 25˚C  
F
A
10  
100  
1000  
R
– BASE RESISTANCE (kΩ)  
BE  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
Figure 6. CTR vs. RBE (Unsaturated)  
T
A
– AMBIENT TEMPERATURE (˚C)  
Figure 5. Normalized CTR vs. Ambient Temperature  
100  
T
= 25˚C  
A
1.0  
10  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
= 0.3 V  
CE  
I
= 20 mA  
F
I
F
= 2.5 mA  
I
= 10 mA  
= 5 mA  
F
0.1  
0.01  
I
I
F
= 20 mA  
F
I
F
= 5 mA  
I
F
= 10 mA  
0.001  
10  
100  
1000  
0.01  
0.1  
1
10  
R
BE  
– BASE RESISTANCE (kΩ)  
I - COLLECTOR CURRENT (mA)  
C
Figure 7. CTR vs. RBE (Saturated)  
Figure 8. Collector-Emitter Saturation Voltage vs Collector Current  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
6
Typical Performance Characteristics (Continued)  
1000  
I
V
T
= 10 mA  
F
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
= 10 V  
CC  
= 25˚C  
A
V
CC =  
10 V  
I
C
= 2 mA  
R
L
= 100 Ω  
100  
10  
1
T
f
T
off  
T
on  
T
r
10  
100  
1000  
10000  
100000  
0.1  
R
– BASE RESISTANCE (kΩ)  
BE  
0.1  
1
10  
100  
R – LOAD RESISTOR (kΩ)  
Figure 10. Normalized t vs. R  
on  
BE  
Figure 9. Switching Speed vs. Load Resistor  
V
= 10 V  
C
CE  
= 25°  
1.4  
T
A
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
1000  
100  
10  
1
V
I
R
10 V  
CC =  
= 2 mA  
0.1  
C
= 100 Ω  
L
0.01  
0.001  
10  
100  
1000  
10000  
100000  
0
20  
40  
60  
80  
100  
R
BE  
– BASE RESISTANCE (kΩ)  
T
A
– AMBIENTTEMPERATURE (°C)  
Figure 11. Normalized t vs. R  
off  
BE  
Figure 12. Dark Current vs. Ambient Temperature  
TEST CIRCUIT  
WAVEFORMS  
V
CC = 10 V  
INPUT PULSE  
IC  
IF  
RL  
10%  
90%  
INPUT  
OUTPUT  
OUTPUT PULSE  
RBE  
tr  
tf  
toff  
ton  
I
I
Adjust  
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 13. Switching Time Test Circuit and Waveforms  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
7
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 s  
Time above  
183°C = 90 s  
°C  
1.822°C/s Ramp up rate  
60  
40  
33 s  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
Figure 14. Reflow Profile  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
8
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
TIL111M  
TIL111SM  
Standard Through-Hole Device  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
S
SR2  
T
TIL111SR2M  
TIL111TM  
V
TIL111VM  
VDE 0884  
TV  
TIL111TVM  
TIL111SVM  
TIL111SR2VM  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
TIL111  
X YY Q  
6
V
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One-digit year code, e.g., ‘3’  
Two-digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are  
marked with date code ‘325’ or earlier are marked in portrait format.  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
9
Package Dimensions  
Figure 15. 6-Pin DIP Through Hole  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,  
specifically the warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/packaging/.  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
10  
Package Dimensions (Continued)  
Figure 16. 6-Pin DIP Surface Mount  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,  
specifically the warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/packaging/  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
11  
Package Dimensions (Continued)  
Figure 17. 6-Pin DIP 0.4” Lead Spacing  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,  
specifically the warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/packaging/  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
12  
Carrier Tape Specification  
12.0 0.1  
2.0 0.05  
4.5 0.20  
Ø1.5 MIN  
1.75 0.10  
4.0 0.1  
0.30 0.05  
11.5 1.0  
24.0 0.3  
9.1 0.20  
21.0 0.1  
Ø1.5 0.1/-0  
10.1 0.20  
User Direction of Feed  
0.1 MAX  
Figure 18. Carrier Tape Specification  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
13  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.3  
www.fairchildsemi.com  
14  

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