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PZTA06_NL [FAIRCHILD]

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PZTA06_NL
型号： PZTA06_NL
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
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Discrete POWER & Signal  
Technologies  
MPSA06  
MMBTA06  
PZTA06  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 1G  
B
SOT-223  
E
NPN General Purpose Amplifier  
This device is designed for general purpose amplifier applications  
at collector currents to 300 mA. Sourced from Process 33.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA06  
*MMBTA06  
**PZTA06  
PD  
Total Device Dissipation  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
°
mW/ C  
°
Derate above 25 C  
Thermal Resistance, Junction to Case  
83.3  
°
Rθ  
C/W  
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  
NPN General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)EBO  
ICEO  
Collector-Emitter Sustaining Voltage*  
IC = 1.0 mA, IB = 0  
IE = 100 µA, IC = 0  
VCE = 60 V, IB = 0  
VCB = 80 V, IE = 0  
80  
V
V
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
4.0  
0.1  
0.1  
µA  
µA  
ICBO  
Collector-Cutoff Current  
ON CHARACTERISTICS  
hFE  
DC Current Gain  
IC = 10 mA, VCE = 1.0 V  
IC = 100 mA, VCE = 1.0 V  
IC = 100 mA, IB = 10 mA  
100  
100  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
0.25  
1.2  
V
V
VCE(sat)  
VBE(on)  
IC = 100 mA, VCE = 1.0 V  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
IC = 10 mA, VCE = 2.0 V,  
f = 100 MHz  
100  
MHz  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%  
Spice Model  
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0  
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5  
Vtf=4 Xtf=6 Rb=10)  
Typical Characteristics  
Collector-Emitter Saturation  
Voltage vs Collector Current  
Typical Pulsed Current Gain  
vs Collector Current  
0.5  
0.4  
0.3  
0.2  
0.1  
0
200  
150  
100  
50  
β
= 10  
VCE= 1V  
125 °C  
25 °C  
125 °C  
25 °C  
- 40 ºC  
- 40 ºC  
0.1  
1
10  
100  
1000  
0.001  
0.01  
0.1  
I C- COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (A)  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Base Emitter ON Voltage vs  
Collector Current  
Base-Emitter Saturation  
Voltage vs Collector Current  
β
1
0.8  
0.6  
0.4  
0.2  
0
= 10  
1
0.8  
0.6  
0.4  
- 40 ºC  
25 °C  
- 40 ºC  
25 °C  
125 °C  
125 °C  
V
= 5V  
CE  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Collector Saturation Region  
Collector-Cutoff Current  
vs. Ambient Temperature  
2
1.5  
1
T
= 25°C  
A
10  
1
V
= 80 V  
CB  
0.1  
I
=
100 mA  
1 mA  
10 mA  
C
0.5  
0
0.01  
0.001  
25  
50  
75  
100  
125  
4000  
10000  
20000  
30000  
50000  
º
TA - AMBIENT TEMPERATURE ( C)  
I
- BASE CURRENT (uA)  
B
Collector-Emitter Breakdown  
Voltage with Resistance  
Between Emitter-Base  
Input and Output Capacitance  
vs Reverse Voltage  
100  
10  
1
f = 1.0 MHz  
117  
116  
115  
114  
113  
112  
111  
C
ib  
C
ob  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
1000  
V
- COLLECTOR VOLTAGE(V)  
CE  
RESISTANCE (k Ω)  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Gain Bandwidth Product  
Power Dissipation vs  
Ambient Temperature  
vs Collector Current  
400  
1
0.75  
0.5  
V
= 5V  
ce  
350  
300  
250  
200  
150  
100  
SOT-223  
TO-92  
SOT-23  
0.25  
0
1
10  
20  
50  
100  
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
I
- COLLECTOR CURRENT (mA)  
C

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