QSD723 [FAIRCHILD]
PLASTIC SILICON INFRARED PHOTOTRANSISTOR; 塑封硅红外光敏晶体管
| 型号： | QSD723 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722 QSD723 QSD724
PACKAGE DIMENSIONS
0.190 (4.83)
0.178 (4.52)
45°
0.235 (5.97)
0.218 (5.54)
REFERENCE
SURFACE
0.030 (0.76)
0.800 (20.3)
MIN
EMITTER
0.050 (1.27)
COLLECTOR
0.100 (2.54) NOM
0.215 (5.46) NOM
SCHEMATIC
0.020 (0.51)
SQ 2PLCS
COLLECTOR
45°
0.020 (0.51) RADIUS
NOTES:
EMITTER
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package.
FEATURES
• NPN Silicon Phototransistor
• Package Type: Plastic TO-18
• Matched Emitter: QED523
• Narrow Reception Angle, 40°
• Daylight Filter
• Package material and color: black epoxy
• High Sensitivity
2001 Fairchild Semiconductor Corporation
DS300363
7/18/01
1 OF 4
www.fairchildsemi.com
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722 QSD723 QSD724
(T = 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
A
Parameter
Operating Temperature
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCE
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
Unit
°C
°C
°C
°C
V
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation(1)
VEC
5
V
PD
100
mW
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.
(TA =25°C)
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
—
—
—
30
5
TYP
880
±20
—
MAX
—
UNITS
nm
Deg.
nA
Peak Sensitivity Wavelength
Reception Angle
!
PS
"
—
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current(5)
QSD722
VCE = 10 V, Ee = 0
IC = 1 mA
ICEO
100
—
BVCEO
BVECO
—
V
IE = 100 µA
—
—
V
0.6
2.5
3.5
—
—
—
—
0.4
8
3.8
10.0
—
Ee = 0.5 mW/cm2, VCE = 5 V
QSD723
IC(ON)
mA
QSD724
Saturation Voltage(5)
Ee = 0.5 mW/cm2, IC = 0.6 mA
VCE(sat)
—
V
Rise Time
tr
tf
—
—
VCC = 5 V, RL = 100 Ω, IC = 0.2 mA
µs
Fall Time
—
8
—
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7/18/01
DS300363
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722 QSD723 QSD724
Figure 1. Light Current vs. Radiant Intensity
= 5V
102
101
100
Figure 2. Angular Response Curve
V
CE
90
100
80
GaAs Light Source
110
70
120
60
130
50
40
140
150
160
170
30
20
10
180
1.0
0
1.0
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0.8
0.6
0.1
1
2
Ee - Radiant Intensity (mW/cm )
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
101
100
10-1
10-2
101
100
10-1
10-2
10-3
2
I =1mW/cm
e
2
I =0.5mW/cm
e
2
2
I =0.2mW/cm
e
I =0.1mW/cm
e
Normalized to:
= 5V
V
CE
2
I
e
= 0.5mW/cm
o
T
A
= 25 C
0
5
10
15
20
25
30
0.1
1
10
VCE - Collector-Emitter Voltage (V)
VCE - Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature
Normalized to:
104
V
CE
= 25V
o
103
102
101
100
10-1
T
A
= 25 C
V
CE
=25V
V
CE
=10V
25
50
75
100
oC
)
TA - Ambient Temperature (
DS300363
7/18/01
3 OF 4
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PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722 QSD723 QSD724
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
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7/18/01
DS300363
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