QSE159E3R0 [FAIRCHILD]
Photo IC;
| 型号： | QSE159E3R0 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Photo IC |
| 文件： | 总7页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
PACKAGE DIMENSIONS
0.175 (4.44)
0.100 (2.54)
Ø 0.065 (1.65)
Ø 0.095 (2.41)
0.200 (5.08)
0.100 (2.54)
0.500 (12.7)
MIN
Color
Part Number Definitions
Code
QSE156 TotemꢀPole, buffer output
QSE157 TotemꢀPole, inverter output
QSE158 Openꢀcollector, buffer output
Red
0.020 (0.51)
SQ. 3X
0.025 (0.64)
Yellow
Green
0.075 (1.90)
2X
QSE159 Openꢀcollector, inverter output Blue
VOUT
VCC
GND
Input/Output Table
Part Number
Light
Output
0.100 (2.54) REF.
On
Off
On
Off
On
Off
On
Off
High
Low
Low
High
High
Low
Low
High
QSE156
QSE157
QSE158
QSE159
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions unless
otherwise specified.
DESCRIPTION
The QSE15X family are OPTOLOGIC® ICs which feature a Schmitt trigger at output which provides hysteresis for noise immunity
and pulse shaping. The basic building block of this IC consists of a photodiode, a linear amplifier, voltage regulator, Schmitt trigger
and four output options. The TTL/LSTTL compatible output can drive up to ten TTL loads over supply currents from 4.5 to 16.0
volts. The devices are marked with a color stripe for easy identification.
FEATURES
•
•
•
•
•
•
•
•
Bipolar silicon IC
Package type: Sidelooker
Medium wide reception angle, 50°
Package material and color: black epoxy
Matched emitter: QEE113/QEE123
Daylight filter
High sensitivity
Direct TTL/LSTTL interface
© 2004 Fairchild Semiconductor Corporation
Page 1 of 7
8/4/04
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
VOLTAGE
REGULATOR
V
CC
(3)
QSE156
LA
V
OUT
(4)
Totem-Pole Output Buffer
GND (5)
VOLTAGE
REGULATOR
V
V
(3)
(4)
CC
QSE157
LA
Totem-Pole Output inverter
OUT
GND (5)
V
V
(3)
(4)
CC
VOLTAGE
REGULATOR
QSE158
OUT
LA
Open-Collector Output Buffer
GND (5)
V
V
(3)
(4)
CC
VOLTAGE
REGULATOR
QSE159
OUT
LA
Open-Collector Output Inverter
GND (5)
© 2004 Fairchild Semiconductor Corporation
Page 2 of 7
8/4/04
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Rating
Unit
Operating Temperature
Storage Temperature
T
ꢀ40 to +85
ꢀ40 to +100
240 for 5 sec
260 for 10 sec
50
°C
°C
°C
°C
mA
V
OPR
T
STG
(2,3,4)
(2,3)
Soldering Temperature (Iron)
T
SOLꢀI
Soldering Temperature (Flow)
Output Current
T
SOLꢀF
I
O
Supply Voltage
V
4.0 to 16
30
CC
Output Voltage
V
V
O
(1)
Power Dissipation
P
100
mW
D
NOTES:
1. Derate power dissipation linearly 2.50 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 880 nm (AlGaAs).
ELECTRICAL / OPTICAL CHARACTERISTICS (T = –40°C to +85°C, V = 4.5 to 16 volts)
A
CC
Parameter
Symbol
Min
Typ Max
Units
Test Conditions
(5)
2
Positive Going Threshold Irradiance
Hysteresis Ratio
Ee (+)
0.025
1.10
—
0.250 mW/cm T = 25°C
A
Ee (+)/Ee(–)
2.00
2(5)
Supply Current
I
5.0
mA
V
Ee = 0 or .3 mW/cm
CC
Peak to peak ripple which will cause false
triggering
—
2.00
f = DC to 50 MHZ
QSE156 (BUFFER TOTEM POLE)
High Level Output Voltage
Low Level Output Voltage
QSE157 (INVERTER TOTEM POLE)
High Level Output Voltage
Low Level Output Voltage
QSE158 (BUFFER OPEN COLLECTOR)
High Level Output Current
Low Level Output Voltage
QSE159 (INVERTER OPEN COLLECTOR)
High Level Output Current
Low Level Output Voltage
QSE156, QSE157
2
(5)
V
V
ꢀ2.1
—
V
V
Ee = .3 mW/cm , I = ꢀ1.0mA
OH
CC
OH
V
—
0.40
Ee = 0, I = 16 mA
OL
OL
V
V
ꢀ2.1
—
V
V
Ee = 0, I = ꢀ1.0mA
OH
CC
OH
2
(5)
V
—
0.40
Ee = .3 mW/cm , I = 16mA
OL
OL
2
(5)
I
—
—
100
µA
V
Ee = .3mW/cm , V = 30V
OH
OH
V
0.40
Ee = 0, I = 16mA
OL
OL
I
—
—
100
µA
V
Ee = 0, V = 30V
OH
OH
2
(5)
V
0.40
Ee = .3mW/cm , I = 16mA
OL
OL
2
Output rise, fall times
tr, tf
—
—
70
nS
µS
Ee = 0 or .3 mW/cm , f = 10KHz
DC = 50%, R =360Ω
(5)
Propagation delay
tphl, tplh
6.0
6.0
L
QSE158, QSE159
2
Output rise, fall times
tr, tf
100
nS
µS
Ee = 0 or .3 mW/cm , f = 10KHz
DC = 50%, R =360Ω
(5)
Propagation delay
tphl, tplh
L
© 2004 Fairchild Semiconductor Corporation
Page 3 of 7
8/4/04
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
Typical Performance Curves - (Sensor Coupled to QEE113 Emitter)
Fig. 2 Output Voltage vs. Input Current (Buffers)
Fig. 1 Output Voltage vs. Input Current (Inverters)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
V
R
= 5 V
= 270 Ω
= 25˚C
CC
V
R
= 5 V
= 270 Ω
= 25˚C
CC
V
V
OH
OH
L
L
T
A
T
A
d = 4mm
d = 4mm
I
I
I
I
F (ON)
F (OFF)
F (ON)
F (OFF)
V
OL
V
OL
0
1
2
I ꢀ Input Current (mA)
F
3
4
5
0
1
2
3
4
5
I
ꢀ Input Current (mA)
F
Fig. 3 Threshold Current vs. Distance
Fig. 4 Normalized Threshold Current vs. Supply Voltage
10
8
1.6
Normalized to:
6
Turn ON Threshold
1.4
V
= 5 V
CC
4
T
A
= 25˚C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2
I
F (ON)
Normalized to:
V
R
= 5 V
= 270Ω
= 25 °C
CC
1.0
0.8
0.6
L
I
F (OFF)
T
A
d = 4mm
0.4
Pulsed 100Hz
PW = 100µs
0.2
0.1
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
d ꢀ Distance (mm)
V
ꢀ Supply Voltage (V)
CC
© 2004 Fairchild Semiconductor Corporation
Page 4 of 7
8/4/04
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
Fig. 5 Normalized Threshold Current
vs. Ambient Temperature
Fig. 6 Low Output Voltage vs. Output Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
Normalized to:
V
= 5 V
CC
= 25˚C
V
= 5 V
CC
= 25˚C
T
A
T
A
I
= 10 mA
F
I
F (OFF)
I
F (ON)
I
I
F (ON)
0.1
F (OFF)
0.01
ꢀ40
ꢀ20
0
20
40
60
80
100
1
10
IO ꢀ Output Current (mA)
TA ꢀ Ambient Temperature (˚C)
Fig. 7 Response Time vs. Forward Current
5
4
3
2
1
0
V
= 5 V
CC
R
= 270 Ω
L
T
= 25˚C
A
I
Pulsed
F
T = 10 ms
Duty Cycle = 50%
T
PLH
T
PHL
0
5
10
IF ꢀ Forward Current (mA)
15
20
© 2004 Fairchild Semiconductor Corporation
Page 5 of 7
8/4/04
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
Fig. 8 Switching Speed Test Circuit
C2
5V
R1
R2
.1 uf
bypass
Pulse
Generator
= 5V
f = 10 KHz
d.c. = 50%
C1
GND
V
O
R1= 360
R2= 180
Ω
Ω
C1= 15 pf
C2= 20 pf
C1and C2 include probe and
stray wire capacitance
Fig. 9 Switching Times Definition for Buffers
Fig. 10 Switching Times Definition for Inverters
50%
50%
0 mA
0 mA
tPLH
tPHL
tPHL
tPLH
VOH
VOH
10%
90%
90%
10%
90%
10%
10%
90%
Output
VO
Output
VO
50%
VOL
VOL
tr
tf
tf
tr
© 2004 Fairchild Semiconductor Corporation
Page 6 of 7
8/4/04
PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2004 Fairchild Semiconductor Corporation
Page 7 of 7
8/4/04
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