RMPA39200 [FAIRCHILD]
37-40 GHz 1.6 Watt Power Amplifier MMIC; 37-40 GHz的1.6瓦功率放大器MMIC
| 型号： | RMPA39200 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 37-40 GHz 1.6 Watt Power Amplifier MMIC |
| 文件： | 总8页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2004
RMPA39200
37–40 GHz 1.6 Watt Power Amplifier MMIC
General Description
Features
The Fairchild Semiconductor’s RMPA39200 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA39200 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
• 19dB small signal gain (typ.)
• 32dBm power out (typ.)
• Circuit contains individual source vias
• Chip size 4.28mm x 3.19mm
Device
Absolute Ratings
Symbol
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Ratings
Units
V
Vd
Vg
+6
-2
+8
V
Vdg
Simultaneous (Vd–Vg)
V
I
Positive DC Current
2352
mA
dBm
°C
D
P
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
20
IN
T
T
-30 to +85
-55 to +125
8
C
°C
STG
R
°C/W
JC
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
Electrical Characteristics (At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idq) = 1600mA
Parameter
Min
Typ
Max
Units
GHz
V
Frequency Range
37
40
1
Gate Supply Voltage (Vg)
-0.2
Gain Small Signal (Pin = 0dBm)
(f = 37–38.5GHz)
(f = 38.5–40GHz)
17
16
19
17
dB
dB
Gain Variation vs. Frequency
±1.5
dB
Power Output at 1dBm Compression
(f = 37–38.5GHz)
(f = 38.5–40GHz)
31
30
dBm
dBm
Power Output Saturated (Pin = +16dBm)
(f = 37–38.5GHz)
(f = 38.5–40GHz)
31
30
32
31
dBm
dBm
Drain Current at Pin = 0dBm
1600
1700
17
mA
mA
%
Drain Current at P1dB Compression
Power Added Efficiency (PAE) at P1dB
OIP3 (17dbm/Tone) (10MHz Tone Sep.)
Input Return Loss (Pin = 0dBm)
Output Return Loss (Pin = 0dBm)
37
dBm
dB
10
10
dB
Note:
1. Typical range of negative gate voltages is -0.5 to 0.0V to set typical Idq of 1600 mA.
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap
between the chip and the substrate material.
DRAIN SUPPLY
(VDA & VDB)
MMIC CHIP
RF IN
RF OUT
GROUND
(Back of the Chip)
GATE SUPPLY
(VGA & VGB)
Figure 1. Functional Block Diagram
3.194
3.010
1.827
1.597
1.367
0.184
0.0
0.0 0.205
0.889
1.954
2.426
2.954
3.500
4.282
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 4.282mm x 3.194mm x 50µm. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
DRAIN SUPPLY (Vd = +5V)
(Connect to both VDA & VDB)
10000pF
L
100pF
BOND WIRE Ls
L
MMIC CHIP
RF IN
RF OUT
L
GROUND
(Back of Chip)
100pF
BOND WIRE Ls
L
10000pF
GATE SUPPLY (Vg)
(VGA and/or VGB)
Figure 3. Recommended Application Schematic Circuit Diagram
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
Vd (POSITIVE)
Vg (NEGATIVE)
2 MIL GAP
10000pF
10000pF
DIE-ATTACH
80Au/20Sn
100pF
100pF
5 MIL THICK
ALUMINA
50Ω
5 MIL THICK
ALUMINA
50Ω
RF OUTPUT
RF INPUT
L < 0.015"
(4 Places)
100pF
100pF
10000pF
10000pF
Vd (POSITIVE)
Vg (NEGATIVE)
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
Figure 4. Recommended Assembly and Bonding Diagram
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 1600mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
The following sequence of steps must be followed to
properly test the amplifier.
Step 1: Turn off RF input power.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Note: An example auto bias sequencing circuit to apply
negative gate voltage and positive drain voltage for the
above procedure is shown below.
Step 3: Slowly apply positive drain bias supply voltage of
+5V to Vd.
D3
D1N6098
+6V
D2
D1N6098
C1
0.1µF
R1
3.0k
R3
1.0k
+
0
*
U2
V+
LM2941T
1
2
AD820/AD
3
2
U1A
7400
CNT
V-
–
5
4
3
+2.62V
IN
OUT
MMIC_+VDD
GND
C3
22µF
C2
0.47µF
R4
1.2k
R2
6.8k
0
0
ADJ
1
0
R6
1k
R5
3k
0
0
*Adj. For –Vg
R7
–5V
MMIC_–VG
C4
0.1µF
C5
0.1µF
*
R8
1.0k
–5V Off: +3.33V
–5V Off: +1.80V
8.2k
0
0
0
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
Typical Characteristics
RMPA39200 Power and LS Gain @ P1dB vs. Frequency
Bias Vd = 5V, Id = 1600mA, T = 25°C
35
RMPA39200 S-Parameters vs. Frequency
Bias Vd = 5V, Id = 1600mA, T = 25°C
25
30
20
10
0
P1dB
20
S21
30
15
25
20
10
S11
5
-10
-20
-30
LARGE SIGNAL GAIN
15
0
S22
-5
10
34
35
36
37
38
39
40
41
42
3
37
38
39
40
FREQUENCY (GHz)
FREQUENCY (GHz)
RMPA39200 Gain vs. Power Out
Freq. = 37 to 40GHz, Bias Vd = 5V, Id = 1600mA, T = 25°C
22
RMPA39200 OIP3 vs. Pout/Tone
Vd = 5V, Idq = 1600mA, T = 25°C, 10MHz Tone Sep
41
37GHz
39GHz
21
40
39
38
37
36
35
34
40GHz
38GHz
20
38GHz
37GHz
19
18
17
16
15
14
40GHz
39GHz
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
Pout/TONE (dBm)
14 16 18 20 22 24 26 28 30 32 34
Pout (dBm)
©2004 Fairchild Semiconductor Corporation
RMPA39200 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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