SFF9140 [FAIRCHILD]
Advanced Power MOSFET; 先进的功率MOSFET型号: | SFF9140 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Advanced Power MOSFET |
文件: | 总7页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFF9140
Advanced Power MOSFET
FEATURES
BVDSS = -100 V
RDS(on) = 0.2 Ω
ID = -13.2 A
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! 175oC Operating Temperature
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
! Lower RDS(ON) : 0.161 Ω (Typ.)
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
-100
-13.2
-9.2
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
ID
A
IDM
VGS
EAS
IAR
1
53
A
V
O
+
_
Gate-to-Source Voltage
20
2
Single Pulsed Avalanche Energy
Avalanche Current
580
-13.2
8.0
mJ
A
O
1
O
EAR
dv/dt
1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
mJ
V/ns
W
O
3
-6.5
80
O
PD
TJ , TSTG
TL
0.53
W/oC
Operating Junction and
- 55 to +175
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
oC
1/8”
Purposes,
from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
RθJC
Junction-to-Case
--
--
1.88
40
oC/W
RθJA
Junction-to-Ambient
Rev. A
P-CHANNEL
POWER MOSFET
SFF9140
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=-250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/oC
V
-100 --
-- -0.11 --
-2.0 -- -4.0
-- -100
--
∆BV/∆TJ
VGS(th)
ID=-250µA
See Fig 7
V
V
V
DS=-5V,ID=-250µA
GS=-20V
GS=20V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
--
--
100
-10
VDS=-100V
DS=-80V,TC=150oC
IDSS
Drain-to-Source Leakage Current
µA
V
-- -100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
RDS(on)
4
VGS=-10V,ID=-6.6A
VDS=-40V,ID=-6.6A
--
--
Ω
0.2
O
gfs
Ciss
Coss
Crss
td(on)
tr
4
--
--
--
--
--
--
--
--
--
--
--
8.9
--
S
O
1180 1535
VGS=0V,VDS=-25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
360
125
40
55
100
60
54
--
240
83
pF
See Fig 5
14
VDD=-50V,ID=-17A,
22
RG=12 Ω
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
45
4
See Fig 13
5
OO
26
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
43
VDS=-80V,VGS=-10V,
Qgs
Qgd
nC
7.4
17.8
ID=-17A
4
5
--
See Fig 6 & Fig 12
OO
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
TJ=25oC,IS=-13.2A,VGS=0V
TJ=25oC,IF=-17A
--
--
--
-- -13.2
-- -53
-- -4.0
A
ISM
1
O
4
VSD
trr
V
O
ns
µC
-- 135 --
-- 0.7 --
4
Qrr
diF/dt=100A/µs
O
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
L=5.0mH, IAS=-13.2A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
2
O
-17A, di/dt 450A/µs, VDD BVDSS , Starting TJ =25oC
_
<
3
_
<
_
<
I
O
SD
4
_
<
Pulse Test : Pulse Width = 250µs, Duty Cycle
2%
O
5
Essentially Independent of Operating Temperature
O
P-CHANNEL
POWER MOSFET
SFF9140
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
- 15V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5V
- 5.0 V
1
10
1
10
Bottom : - 4.5V
175 oC
25 oC
0
10
@ Notes :
1. VGS = 0 V
0
10
2. VDS = -40 V
@ Notes :
1. 250 s Pulse Test
µ
3. 250 s Pulse Test
µ
- 55 oC
2. T = 25 oC
C
-1
10
-1
0
1
2
4
6
8
10
10
10
10
-V , Gate-Source Voltage [V]
-V , Drain-Source Voltage [V]
GS
DS
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
10
V
GS =-10V
0
10
175 oC
@Notes:
1. VGS = 0 V
25oC
2. 250 sPulseTest
µ
V
GS =-20V
@Note: T = 25 oC
J
-1
10
0
8
16
24
32
40
48
56
64
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-I , Drain Current [A]
-V , Source-Drain Voltage [V]
D
SD
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
2000
1500
1000
500
C
iss=C +Cgd (C =shorted)
gs ds
C
oss=C +C
ds gd
V
DS =-20V
DS =-50V
DS =-80V
10
5
Crss=C
V
gd
Ciss
V
Coss
@Notes:
1. VGS = 0 V
2. f= 1MHz
Crss
@Notes:I =-17 A
D
00
10
0
1
0
10
20
30
40
50
10
Q , Total Gate Charge [nC]
-V , Drain-Source Voltage [V]
G
DS
P-CHANNEL
POWER MOSFET
SFF9140
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = -10 V
@ Notes :
1. VGS = 0 V
2. I = -8.5 A
D
2. I = -250
A
µ
D
-75 -50 -25
0
25
50
75 100 125 150 175 200
o
-75 -50 -25
0
25
50
75 100 125 150 175 200
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
15
Operation in This Area
is Limited by R DS(on)
2
10
12
9
0.1 ms
1 ms
1
10
10 ms
DC
6
@ Notes :
1. T = 25 oC
C
0
10
2. T = 175 oC
J
3
3. Single Pulse
-1
0
10
0
1
2
25
50
75
100
125
150
175
10
10
10
o
T , Case Temperature [C]
-V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
100
D=0.5
@ Notes :
1. Z
(t)=1.88 oC/W Max.
0.2
0.1
θ JC
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Zθ JC(t)
0.05
10-1
P.DM
0.02
t1.
t2.
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
P-CHANNEL
POWER MOSFET
SFF9140
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
-10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
-3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
t on
t off
Vout
Vin
tf
td(on)
tr
td(off)
VDD
( 0.5 rated VDS
)
Vin
10%
RG
DUT
-10V
90%
Vout
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
BVDSS -- VDD
EAS
=
LL IAS
VDS
t p
Time
Vary tp to obtain
required peak ID
VDD
VDS (t)
RG
C
VDD
ID (t)
DUT
-10V
IAS
BVDSS
t p
P-CHANNEL
POWER MOSFET
SFF9140
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
--
I S
L
Driver
VGS
Compliment of DUT
RG
(N-Channel)
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
VGS
--------------------------
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I S
( DUT )
di/dt
IFM , Body Diode Forward Current
Vf
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
TRADEMARKS
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H7
相关型号:
SFF9140JDB
Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
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