SGL50N60 [FAIRCHILD]
Short Circuit Rated IGBT; 短路额定IGBT
| 型号： | SGL50N60 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Short Circuit Rated IGBT |
| 文件： | 总7页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
SGL50N60RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
•
•
•
•
Short circuit rated 10us @ T = 100°C, V = 15V
C
GE
High speed switching
Low saturation voltage : V
High input impedance
= 2.2 V @ I = 50A
CE(sat)
C
designed for
applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-264
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGL50N60RUF
Units
V
V
V
Collector-Emitter Voltage
600
± 20
CES
GES
Gate-Emitter Voltage
V
Collector Current
@ T
=
25°C
80
A
C
I
I
C
Collector Current
@ T = 100°C
50
A
C
Pulsed Collector Current
150
A
CM (1)
T
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,1/8” from Case for 5 Seconds
@ T = 100°C
10
us
W
W
°C
°C
SC
C
P
@ T = 25°C
250
D
C
@ T = 100°C
100
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
0.5
25
θJC
θJA
Thermal Resistance, Junction-to-Ambient
--
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
Ic = 50mA, V = V
GE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
GE(th)
CE
I
I
= 50A,
= 80A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
C
C
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
3311
399
139
--
--
--
pF
pF
pF
ies
V
=30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
26
89
--
--
ns
ns
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
66
100
200
--
ns
V
R
= 300 V, I = 50A,
C
d(off)
f
CC
= 5.9Ω, V = 15V,
118
1.68
1.03
2.71
28
ns
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
C
on
off
--
3.8
--
ts
t
t
t
t
d(on)
r
91
--
ns
Turn-Off Delay Time
Fall Time
68
110
400
--
ns
V
= 300 V, I = 50A,
C
d(off)
f
CC
R
= 5.9Ω, V = 15V,
261
1.7
ns
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
C
on
off
ts
2.31
4.01
--
5.62
V
= 300 V, V = 15V,
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
us
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
145
25
210
35
nC
nC
nC
nH
g
V
V
= 300 V, I = 50A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
70
100
--
L
Measured 5mm from PKG
18
e
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
140
120
100
80
15V
20V
Common Emitter
TC = 25℃
140
120
100
80
Common Emitter
VGE = 15V
TC
= 25℃ ━━
TC = 125℃ ------
12V
60
60
VGE = 10V
40
40
20
20
0
0
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
60
VCC = 300V
Common Emitter
Load Current : peak of square wave
V
GE = 15V
50
4
3
2
1
0
100A
40
30
20
50A
IC = 30A
10
Duty cycle : 50%
℃
T
C = 100
Power Dissipation = 70W
0
1
10
100
1000
-50
0
50
100
150
℃
Frequency [KHz]
Case Temperature, TC
[
]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
℃
TC = 25
TC = 125
16
12
8
100A
100A
4
4
50A
50A
IC = 30A
IC = 30A
8
0
0
0
4
8
12
16
20
0
4
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. V
Fig 5. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
7000
6000
5000
4000
3000
2000
1000
0
1000
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
T
C = 25℃
TC
= 25℃ ━━
Ton
Tr
TC = 125℃ ------
Cies
Coes
Cres
100
1
10
Collector - Emitter Voltage, VCE [V]
10
100
Gate Resistance, RG [Ω]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
Common Emitter
±
15V
VCC = 300V, VGE
IC = 50A
=
±
15V
VCC = 300V, VGE
C = 50A
=
I
1000
℃ ━━
= 25
TC
TC = 125 ------
℃ ━━
= 25
TC
C = 125 ------
Eon
℃
Toff
Toff
℃
T
Eoff
Eoff
Tf
Tf
1000
100
10
Gate Resistance, RG [Ω]
100
10
Gate Resistance, RG [Ω]
100
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
1000
Common Emitter
±
25
VGE
TC
=
15V, RG = 5.9Ω
℃ ━━
=
℃
TC = 125 ------
Ton
Tr
Toff
Tf
100
Toff
100
Tf
Common Emitter
±
VGE
TC
=
15V, RG = 5.9Ω
℃ ━━
25
=
℃
TC = 125 ------
10
10
20
40
60
80
100
10
20
40
60
80
100
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
15
12
9
10000
1000
100
Common Emitter
RL = 6Ω
TC = 25℃
Common Emitter
±
VGE
TC
=
15V, RG = 5.9Ω
℃ ━━
25
=
℃
TC = 125 ------
VCC = 100 V
300 V
200 V
Eoff
Eoff
Eon
6
3
0
10
20
40
60
80
100
0
30
60
90
120
150
180
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
IC MAX. (Pulsed)
100
100
50us
IC MAX. (Continuous)
100us
㎳
1
DC Operation
10
1
10
Single Nonrepetitive
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
10 100
Collector-Emitter Voltage, VCE [V]
0.1
1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
0.01
t1
t2
single pulse
1E-3
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
Package Dimension
TO-264
20.00 ±0.20
(8.30) (8.30)
(2.00)
(1.00)
(0.50)
(7.00)
(7.00)
4.90 ±0.20
(1.50)
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
+0.25
–0.10
1.00
+0.25
–0.10
0.60
2.80 ±0.30
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™ PACMAN™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER® UHC™
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
UltraFET®
VCX™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™ TinyLogic™
Quiet Series™ TruTranslation™
FACT Quiet Series™ MicroPak™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
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