SGP23N60UFJ69Z_技术文档

September 2000

IGBT

SGP23N60UF

Ultra-Fast IGBT

General Description

Features

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF

series provides low conduction and switching losses.

UF series is designed for the applications such as motor

control and general inverters where High Speed Switching

is required.

•

High Speed Switching

Low Saturation Voltage : V

High Input Impedance

= 2.1 V @ I = 12A

CE(sat)

C

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

C

E

G

TO-220

G C E

Absolute Maximum Ratings

T = 25°C unless otherwise noted

C

Symbol

Description

SGP23N60UF

Units

V

Collector-Emitter Voltage

600

CES

GES

Gate-Emitter Voltage

± 20

V

Collector Current

@ T

=

25°C

23

A

C

I

C

Collector Current

@ T = 100°C

12

92

A

C

Pulsed Collector Current

A

CM (1)

P

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

@ T

=

25°C

100

W

°C

D

C

@ T = 100°C

40

C

T

-55 to +150

J

T

stg

T

300

°C

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

1.2

62.5

Units

°C/W

R

Thermal Resistance, Junction-to-Case

--

θJC

θJA

Thermal Resistance, Junction-to-Ambient

--

SGP23N60UF Rev. A

Electrical Characteristics of IGBT

T

= 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

BV

Collector-Emitter Breakdown Voltage

Temperature Coeff. of Breakdown

Voltage

V

= 0V, I = 250uA

600

--

V

CES

GE

C

∆B

/

VCES

J

= 0V, I = 1mA

0.6

V/°C

GE

C

∆T

I

Collector Cut-Off Current

G-E Leakage Current

V

= V

, V = 0V

--

250

uA

nA

CES

GES

CE

CES

GE

, V = 0V

± 100

GE

GES

CE

On Characteristics

V

G-E Threshold Voltage

I

= 12mA, V = V

GE

3.5

--

4.5

2.1

2.6

6.5

2.6

--

V

GE(th)

C

CE

= 12A,

= 23A,

V

= 15V

Collector to Emitter

Saturation Voltage

GE

V

CE(sat)

--

Dynamic Characteristics

C

Input Capacitance

--

720

100

25

--

pF

ies

V

= 30V V = 0V,

, GE

CE

Output Capacitance

oes

res

f = 1MHz

Reverse Transfer Capacitance

Switching Characteristics

t

Turn-On Delay Time

--

17

27

--

ns

uJ

ns

uJ

nC

nH

d(on)

Rise Time

r

Turn-Off Delay Time

Fall Time

60

130

150

--

V

R

= 300 V, I = 12A,

C

d(off)

f

CC

= 23Ω, V = 15V,

70

G

GE

Inductive Load, T = 25°C

E

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

115

135

250

23

C

on

--

off

400

--

ts

t

d(on)

r

32

--

Turn-Off Delay Time

Fall Time

100

220

205

320

525

49

200

250

--

V

= 300 V, I = 12A,

C

d(off)

CC

R

= 23Ω, V = 15V,

f

G

GE

Inductive Load, T = 125°C

E

Turn- On Switching Loss

Turn- Off Switching Loss

Total Switching Loss

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

Internal Emitter Inductance

C

on

off

ts

--

800

80

17

22

--

Q

g

V

= 300 V, I = 12A,

CE

GE

C

11

ge

gc

= 15V

14

L

Measured 5mm from PKG

7.5

e

SGP23N60UF Rev. A

100

80

60

40

20

0

50

40

30

20

10

0

Common Emitter

V_GE= 15V

Common Emitter

20V

℃

T_C= 25

℃

T_C

= 25

15V

12V

T

_C= 125

V_GE= 10V

0

2

4

6

8

0.5

1

10

Collector - Emitter Voltage, V_CE[V]

Fig 1. Typical Output Characteristics

Fig 2. Typical Saturation Voltage

Characteristics

4

20

V_CC= 300V

Load Current : peak of square wave

Common Emitter

V_GE= 15V

3

15

10

5

24A

12A

2

1

0

I_C= 6A

Duty cycle : 50%

℃

T

_C= 100

Power Dissipation = 21W

0

30

60

90

120

150

0.1

1

10

100

1000

℃

Case Temperature, T_C

[

]

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequency

Temperature at Variant Current Level

20

16

12

8

Common Emitter

℃

_C= 125

T

℃

T_C= 25

16

12

8

24A

4

12A

8

12A

8

I_C= 6A

0

4

12

16

20

0

4

12

16

20

Gate - Emitter Voltage, V_GE[V]

Fig 5. Saturation Voltage vs. V

Fig 6. Saturation Voltage vs. V

GE

SGP23N60UF Rev. A

1200

1000

800

600

400

200

0

200

100

Common Emitter

V_GE= 0V, f = 1MHz

Common Emitter

±

15V

V_CC= 300V, V_GE

I_C= 12A

=

℃

T_C= 25

Ton

Tr

℃

T_C

= 25

Cies

T_C= 125

Coes

Cres

10

1

10

Collector - Emitter Voltage, V_CE[V]

30

1

10

Gate Resistance, R_G[Ω]

100

200

Fig 7. Capacitance Characteristics

Fig 8. Turn-On Characteristics vs.

Gate Resistance

1000

Common Emitter

±

15V

V_CC= 300V, V_GE

_C= 12A

=

I

℃

T_C

= 25

Eoff

Eon

T

_C= 125

Toff

Eon

Eoff

Tf

Toff

100

Common Emitter

100

50

±

15V

V_CC= 300V, V_GE

_C= 12A

=

I

Tf

℃

T_C

= 25

T

_C= 125

30

1

10

Gate Resistance, R_G[Ω]

100

200

1

10

Gate Resistance, R_G[Ω]

100

200

Fig 9. Turn-Off Characteristics vs.

Gate Resistance

Fig 10. Switching Loss vs. Gate Resistance

200

1000

Common Emitter

±

15V

V_CC= 300V, V_GE

=

±

15V

V

_CC= 300V, V_GE

=

R_G= 23Ω

R

_G= 23Ω

100

℃

T_C

T_C= 125

= 25

℃

T_C

= 25

T

_C= 125

Toff

Tf

Ton

Toff

100

50

Tr

Tf

10

4

8

12

16

20

24

4

8

12

16

20

24

Collector Current, I_C[A]

Fig 11. Turn-On Characteristics vs.

Collector Current

Fig 12. Turn-Off Characteristics vs.

Collector Current

SGP23N60UF Rev. A

15

12

9

1000

100

10

Common Emitter

R_L= 25 Ω

℃

T_C= 25

Eoff

Eon

300 V

6

200 V

V_CC= 100 V

Common Emitter

Eon

Eoff

±

15V

V_CC= 300V, V_GE

=

3

R_G= 23Ω

℃

T_C

T_C= 125

= 25

0

4

8

12

16

20

24

0

10

20

30

40

50

Collector Current, I_C[A]

Gate Charge, Q_g[ nC ]

Fig 13. Switching Loss vs. Collector Current

Fig 14. Gate Charge Characteristics

300

200

100

I_CMAX. (Pulsed)

100

50us

100us

I_CMAX. (Continuous)

Single Nonrepetitive

10

1

㎳

1

DC Operation

1

℃

Pulse T_C= 25

Curves must be derated

linearly with increase

in temperature

Safe Operating Area

℃

V_GE= 20V, T_C= 100

0.1

0.3

1

10

100

1000

1

10

100

1000

Collector-Emitter Voltage, V_CE[V]

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA Characteristics

5

1

0.5

0.2

0.1

0.05

Pdm

0.02

0.01

t1

t2

0.01

single pulse

Duty factor D = t1 / t2

Peak Tj = Pdm

×

Zthjc + T_C

0.005

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

SGP23N60UF Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FASTr™

QFET™

VCX™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

GlobalOptoisolator™

GTO™

HiSeC™

QS™

QT Optoelectronics™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

POP™

E²CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST^®

PowerTrench^®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. F1


型号：	SGP23N60UFJ69Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN 局域网电动机控制栅瞄准线晶体管
文件：	总6页 (文件大小：561K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SGP23N60UFJ69Z [FAIRCHILD]

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