TIP31CTU [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | TIP31CTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总5页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
•
Complementary to TIP32/TIP32A/TIP32B/TIP32C
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP31
40
60
80
V
V
V
V
: TIP31A
: TIP31B
: TIP31C
100
VCEO
Collector-Emitter Voltage : TIP31
40
60
80
V
V
V
V
: TIP31A
: TIP31B
: TIP31C
100
VEBO
IC
ICP
IB
Emitter-Base Voltage
5
V
A
Collector Current (DC)
Collector Current (Pulse)
Base Current
3
5
A
1
A
PC
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
40
2
W
W
°C
°C
TJ
150
TSTG
- 65 ~ 150
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
www.fairchildsemi.com
1
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP31
IC = 30mA, IB = 0
40
60
80
V
V
V
V
: TIP31A
: TIP31B
: TIP31C
100
ICEO
Collector Cut-off Current
: TIP31/31A
VCE = 30V, IB = 0
VCE = 60V, IB = 0
0.3
0.3
mA
mA
: TIP31B/31C
ICES
Collector Cut-off Current
: TIP31
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
200
200
200
200
μA
μA
μA
μA
: TIP31A
: TIP31B
: TIP31C
IEBO
hFE
Emitter Cut-off Current
* DC Current Gain
VEB = 5V, IC = 0
1
mA
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
25
10
50
1.2
1.8
VCE(sat)
VBE(sat)
fT
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC = 3A, IB = 375mA
V
V
VCE = 4V, IC = 3A
VCE = 10V, IC = 500mA, f = 1MHz
3.0
MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
www.fairchildsemi.com
2
Typical Characteristics
10000
1000
100
1000
100
10
VCE = 4V
IC/IB = 10
VBE(sat)
VCE(sat)
10
1
1
10
100
1000
10000
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
50
45
40
35
30
25
20
15
10
5
IC(MAX) (PULSE)
100μs
IC(MAX) (DC)
1
TIP31 VCEO MAX.
TIP31A VCEO MAX.
TIP31B VCEO MAX.
TIP31C VCEO MAX.
0.1
0
10
100
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
Figure 4. Power Derating
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
www.fairchildsemi.com
3
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
www.fairchildsemi.com
4
© 2008 Fairchild Semiconductor Corporation
TIP31/TIP31A/TIP31B/TIP31C Rev. A
www.fairchildsemi.com
5
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