FIR4N65ABPG [FIRST]
650V N-Channel MOSFET;
| 型号： | FIR4N65ABPG |
| 厂家： | 
FIRST SEMI |
| 描述： | 650V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：2837K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FIR4N65ABPG/ALG
650V N-Channel MOSFET
PIN Connection TO-251/252
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=13.7nC (Typ.).
□ BVDSS=650V,ID=4A
TO‐251
TO‐252
□ RDS(on) : 2.6 Ω (Max) @VG=10V
□ 100% Avalanche Tested
g
Schematic dia ram
D
G
S
Marking Diagram
YAWW
Y
A
= Year
YAWW
FIR4N65ABP
= Assembly Location
= Work Week
FIR4N65AL
WW
= Specific Device Code
FIR4N65ABP/AL
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
650
4
Unit
VDSS
Drain-Source Voltage
Drain Current
V
Tj=25℃
ID
A
Tj=100℃
2.5
VGS(TH)
EAS
Gate Threshold Voltage
±30
180
V
Single Pulse Avalanche Energy (note1)
mJ
IAR
PD
Tj
Avalanche Current (note2)
Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature
4
50
A
W
℃
℃
150
Tstg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.5
Unit
℃/W
℃/W
RθJC
RθJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
-
-
110
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FIR4N65ABPG/ALG
Electrical Characteristics (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID=250μA，VGS=0
650
-
V
Breakdown Voltage Temperature
Coefficient
ID=250μA ,Reference
to 25℃
△BVDSS/△TJ
V/℃
-
VDS=650V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
μA
VDS=520V, Tj=
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
IGSSF
IGSSR
On Characteristics
VGS=
VGS(TH)
RDS(ON)
Date Thres
Stati
Dynamic
-
70
8
-
-
-
pF
-
-
-
-
-
-
-
13
45
35
100
60
80
-
Charge
Drain Charge
D=300V，ID=4A
RG=25Ω (Note 3,4)
ns
25
35
13.7
2.9
4.6
VDS=520V,VGS=10V，
ID=4A (Note 3,4)
-
nC
-
iode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
-
-
-
-
-
-
4
16
1.35
-
A
ISM
VSD
Trr
-
-
-
ID=4A
V
IS=4A,VGS =0V
diF/dt=100A/μs
(Note3)
Reverse Recovery Time
390
nS
Qrr
Reverse Recovery Charge
-
1.5
-
μC
Notes : 1, L=25mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
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FIR4N65ABPG/ALG
Typical Characteristics
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FIR4N65ABPG/ALG
Typical Characteristics (Continued)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
℃
TC, Case Temperature [
]
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FIR4N65ABPG/ALG
Package Dimension
TO-251
m
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FIR4N65ABPG/ALG
Package Dimension
TO-252
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FIR4N65ABPG/ALG
Declaration
z
FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
Any semiconductor product under certain conditions has the possibility of failure or failuas the
z
z
responsibility to comply with safety
standards and take safety measures when using FIRST products for systTo
avoid To avoid potential failure risks, which may cause personal inju
Product promotion endless, our company will wholeheartedly p
ATTACHMENT
Revision History
Date
REV
2018.01.01
1.0
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