FIR4N70BPG [FIRST]
700V N-Channel MOSFET;
| 型号： | FIR4N70BPG |
| 厂家： | 
FIRST SEMI |
| 描述： | 700V N-Channel MOSFET |
| 文件： | 总11页 (文件大小：6839K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FIR4N70BPG/LG
PIN Connection TO-251/252
700V N-Channel MOSFET
General Description
the silicon N-channel Enhanced
FIR
4N70BPG,LG
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
TO‐251
TO‐252
g
Schematic dia ram
D
Features
）：
G
l Fast Switching
S
l Low ON Resistance(Rdson≤3.0
)
Ω
l Low Gate Charge (Typical
l Low Reverse transfe
l 100% Single
embly Location
= Work Week
= Specific Device Code
P/L
t of adaptor and charger.
25℃ unless otherwise specified）：
Parameter
SS
Rating
Units
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
700
V
A
4
ID
2.5
A
a1
28
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
196
mJ
V/ns
W
EAS
a3
5.0
dv/dt
75
PD
Derating Factor above 25°C
0.6
150，–55 to 150
300
W/℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
TJ，Tstg
TL
℃
REV:1.0
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FIR4N70BPG/LG
Electrical Characteristics（Tc= 25℃ unless otherwise s ecified）：
OFF Characteristics
Rating
Units
Symbol
Parameter
Test Conditions
Min.
7
T
ax.
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
VDSS
V
ID=250uA,Reference25℃
ΔBVDSS/ΔTJ
V/
VDS =700V, VGS= 0
Ta = 25℃
VDS =560
Ta =
µA
A
Drain to Source Leakage Current
IDSS
Gate to Source Forward Leakage
Gate to Source Reverse Leaka
IGSS(F)
IGSS(R)
ON Characteristics
Param
Symbol
V
RDS(ON)
VGS(T
4.0
Rating
Typ.
3.7
ons
Units
S
Min.
--
Max.
--
15V, ID =2A
--
606
48
--
VGS = 0V VDS = 25V
f = 1.0MHz
--
--
pF
citance
--
2.7
--
racteristics
Rating
Typ.
14
Parameter
Test Conditions
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
tr
td(OFF)
tf
--
--
15
ID =4A VDD = 350V
RG =10
Turn-Off Delay Time
Fall Time
--
--
30
--
--
9
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
12.7
3.0
5.1
--
ID =4A VDD =560V
VGS = 10V
Qgs
Qgd
--
--
nC
--
--
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FIR4N70BPG/LG
Source-Drain Diode Characteristics
Rating
Units
Test
Conditions
Parameter
Symbol
Min.
--
Typ.
Max.
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
IS
--
4
A
A
ISM
VSD
trr
--
--
16
5
IS=4A,VGS=0V
--
V
Reverse Recovery Time
ns
nC
A
IS=4A,Tj = 25℃
Reverse Recovery Charge
Qrr
IRRM
dIF/dt=100
VGS=0
Reverse Recovery Current
Pulse width tp≤300µs,δ≤2%
Parameter
Symbol
Junction-to-Case
R
θJC
Junction-to-
Rθ
JA
a1：Repetitive rat
a2：L=10mH
a3：IS
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FIR4N70BPG/LG
Characteristics Curve：
Figure 1 Maximum Forward Bias Safe
e
Figure
4 Typical Output Characteristics
Figure
5
Maximum Effective Thermal Impedance , Junction to Case
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FIR4N70BPG/LG
Figure
6 Ty
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
ypical Drain to Source ON Resistance
vs Drain Current
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FIR4N70BPG/LG
oltage vs Junction Temperature
Figure 13 Typical Gate Charge vs Gate to Source Voltage
Figure 12 Typical Capacitance vs Drain to Source Voltage
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FIR4N70BPG/LG
Test Circuit and Waveform
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FIR4N70BPG/LG
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FIR4N70BPG/LG
TO-251
Units：mm
INCHES
MILLIMETERS
SYMBOL
NOTES
MIN
MAX
MIN
2.19
MAX
2.38
A
A1
b
0.086
0.094
0.041
0.025
0.048
0.035
1.04
0.64
1.23
0.89
b1
b2
c
0.027
0.206
0.018
0.039
0.216
0.024
0.69
5.23
0.46
0.92
5.48
0.61
D
E
0.241
0.249
6.12
6.32
0.250
0.265
6.35
6.73
e
0.090 TYP.
2.28 TYP.
L
0.350
0.035
0.380
0.050
8.89
0.89
9.65
1.27
L2
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FIR4N70BPG/LG
Unit: mm
Package Dimension
TO-252
"
1
2
"
INCHES
MILLIMETERS
SYMBOL
NOTES
MIN
0.086
-
MAX
0.094
0.005
0.035
0.045
0.215
0.024
0.249
-
MIN
2.19
-
MAX
2.38
0.13
0.89
1.14
5.46
0.61
6.32
-
A
A1
b
b2
b3
c
D
D1
E
0.025
0.033
0.205
0.018
0.241
0.205
0.250
0.190
0.64
0.84
5.21
0.46
6.12
5.21
6.35
4.83
0.265
-
6.73
-
E1
e
0.090 BSC.
2.29 BSC.
H
L
0.380
0.055
0.410
0.070
9.65
1.40
10.41
1.78
L2
L3
L4
0.020 BSC.
0.51 BSC.
0.035
0.025
0°
0.050
0.040
8°
0.89
0.64
0°
1.27
1.01
8°
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FIR4N70BPG/LG
Declaration
z
FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
Any semiconductor product under certain conditions has the possibility of failure or failuas the
z
z
responsibility to comply with safety
standards and take safety measures when using FIRST products for systTo
avoid To avoid potential failure risks, which may cause personal inju
Product promotion endless, our company will wholeheartedly p
ATTACHMENT
Revision History
Date
REV
2018.01.01
1.0
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