FIR5N50BLG [FIRST]
600V N-Channel MOSFET;
| 型号： | FIR5N50BLG |
| 厂家： | 
FIRST SEMI |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总11页 (文件大小：5638K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FIR5N50BPG/LG
600V N-Channel MOSFET
PIN Connection TO-251/252
：
General Description
FIR5N
50BPG,LG the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251
TO‐251
TO‐252
g
Schematic dia ram
D
TO-252,
which accords with the RoHS standard.
：
Features
G
l Fast Switching
l Low ON Resistance(Rdson≤1.
S
l Low Gate Charge (
l Low Reverse t
l 100% S
Marking Diagram
YAWW
Y
A
= Year
YAWW
FIR5N50BP
= Assembly Location
= Work Week
FIR5N50L
WW
= Specific Device Code
FIR5N50BP/L
it of adaptor and charger.
= 25℃ unless otherwise specified）：
Parameter
DSS
Rating
Units
Drain-to-Source Voltage
500
V
A
Continuous Drain Current
5
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
3.1
A
a1
20
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
250
mJ
V/ns
W
EAS
a3
5.0
dv/dt
75
0.60
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/℃
℃
TJ，Tstg
150，–55 to 150
300
TL
℃
REV:1.0
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@ 2018 Copyright By American First Semiconductor
FIR5N50BPG/LG
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Rating
Typ.
Unit
s
Parameter
Test Conditions
Symbol
Min.
500
.
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
V
VDSS
ID=250uA,Reference25℃
/℃
ΔBVDSS/ΔTJ
VDS =500V, VGS= 0V,
Ta = 25℃
VDS =400V,
Ta = 1
Drain to Source Leakage Current
IDSS
Gate to Source Forward Leakage
Gate to Source Reverse Leaka
IGSS(F)
IGSS(R)
ON Characteristics
Para
Symbol
RDS(ON)
VG
V
Rating
Typ.
4
Units
S
Min.
--
Max.
--
V, ID =2.5A
--
584
61
--
VGS = 0V VDS = 25V
f = 1.0MHz
--
--
pF
citance
--
4
--
racteristics
Rating
Typ.
14
Parameter
Test Conditions
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
N)
tr
td(OFF)
tf
--
18
--
ID =5A VDD = 250V
RG =10
Turn-Off Delay Time
Fall Time
--
32
--
--
11
--
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
12.6
3.1
4.9
--
ID =5A VDD =400V
VGS = 10V
Qgs
Qgd
--
--
nC
--
--
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FIR5N50BPG/LG
Source-Drain Diode Characteristics
Rating
Units
Parameter
Test Conditions
Symbol
Min.
--
Ty
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
IS
A
ISM
VSD
trr
IS=5.0A,V
Reverse Recovery Time
Reverse Recovery Charge
Qrr
IRRM
Reverse Recovery Current
Pulse width tp≤300µs,δ≤2%
Parameter
Symbol
Juncti
R
θJC
Rθ
JA
a1：Re
a2
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FIR5N50BPG/LG
Characteristics Curve：
1 0 0
80
70
60
50
1 0
1
100us
1ms
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
10ms
DC
0 .1
TC=25℃ Single Pulse
0 .0 1
1
1 0
V d s , D rai
Figure
1 Ma
ure
7.5
50us Pluse Test
Tc = 25℃
VGS=6V
VGS=5V
VGS=5.5V
VGS=4.5V
2.5
0
0
125
150
5
10
15
20
25
ure , C
Vds , Drain-to-Source Voltage , Volts
rain Current vs Case Temperature
Figure
4
Typical Output Characteristics
0%
5%
0.01
PDM
t1
2%
t2
1%
Single pulse
NOTES：
DUTY FACTOR ：D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.001
0.00001
0.0001
Figure
0.001
0.01
0.1
1
Rectangular Pulse Duration,Seconds
Maximum Effective Thermal Impedance , Junction to Case
5
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FIR5N50BPG/LG
8
7
6
5
12
8
250us Pulse Test
VDS=20V
+25℃
4
+150℃
0
2
4
V
eristics
Fi
1.25
1
0.75
0.5
-50
0
50
Tj, Junction temperature , C
100
150
3
4
rain Current , Amps
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
pical Drain to Source ON Resistance
vs Drain Current
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FIR5N50BPG/LG
1.15
1.05
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
-75 -50 -25
0
on Temperature
Figure 10
8
VDS=400V
ID=5A
6
4
2
0
0
3
6
9
12
15
Qg , Total Gate Charge , nC
Figure 13 Typical Gate Charge vs Gate to Source Voltage
igure 12 Typical Capacitance vs Drain to Source Voltage
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FIR5N50BPG/LG
Test Circuit and Waveform
Page 7/11
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FIR5N50BPG/LG
Page 8/11
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FIR5N50BPG/LG
TO-251
Units：mm
INCHES
MILLIMETERS
SYMBOL
NOTES
MIN
MAX
MIN
2.19
MAX
2.38
A
A1
b
0.086
0.094
0.041
0.025
0.048
0.035
1.04
0.64
1.23
0.89
b1
b2
0.027
0.206
0.039
0.216
0.69
5.23
0.92
5.48
c
D
E
0.018
0.241
0.250
0.024
0.249
0.265
0.46
6.12
6.35
0.61
6.32
6.73
e
0.090 TYP.
2.28 TYP.
L
0.350
0.035
0.380
0.050
8.89
0.89
9.65
1.27
L2
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FIR5N50BPG/LG
Unit: mm
Package Dimension
TO-252
"
MILLIMETERS
NOTES
X
0.094
0.005
0.035
0.045
0.215
0.024
0.249
-
MIN
2.19
-
MAX
2.38
0.13
0.89
1.14
5.46
0.61
6.32
-
3
c
D
D1
E
0.025
0.033
0.205
0.018
0.241
0.205
0.250
0.190
0.64
0.84
5.21
0.46
6.12
5.21
6.35
4.83
0.265
-
6.73
-
E1
e
0.090 BSC.
2.29 BSC.
H
L
0.380
0.055
0.410
0.070
9.65
1.40
10.41
1.78
L2
L3
L4
0.020 BSC.
0.51 BSC.
0.035
0.025
0°
0.050
0.040
8°
0.89
0.64
0°
1.27
1.01
8°
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FIR5N50BPG/LG
Declaration
z
FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
Any semiconductor product under certain conditions has the possibility of failure or failuas the
z
z
responsibility to comply with safety
standards and take safety measures when using FIRST products for systTo
avoid To avoid potential failure risks, which may cause personal inju
Product promotion endless, our company will wholeheartedly p
ATTACHMENT
Revision History
Date
REV
2018.01.01
1.0
Page 11/11
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