FIR5N70BPG [FIRST]
700V N-Channel MOSFET-T;
| 型号： | FIR5N70BPG |
| 厂家： | 
FIRST SEMI |
| 描述： | 700V N-Channel MOSFET-T |
| 文件： | 总9页 (文件大小：3114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FIR5N70BPG,FIR5N70LG
PIN Connection TO-251/252
700V N-Channel MOSFET-T
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=15nC (Typ.).
□ BVDSS=700V,ID=5A
TO‐251
TO‐252
□ RDS(on) : 2.3Ω (Max) @VG=10V
□ 100% Avalanche Tested
g
Schematic dia ram
D
G
S
Marking Diagram
YAWW
Y
A
= Year
YAWW
FIR5N70BP
= Assembly Location
= Work Week
FIR5N70L
WW
= Specific Device Code
FIR5N70BPG/LG
Value
700
5
Unit
V
Tj=25℃
A
Tj=100℃
3.5
eshold Voltage
±30
270
V
ingle Pulse Avalanche Energy (note1)
mJ
PD
Tj
Avalanche Current (note2)
Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature
5
38
A
W
℃
℃
150
Tstg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
3.28
110
Unit
℃/W
℃/W
RθJC
RθJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
-
-
REV:1.0
Page 1/9
@ 2018 Copyright By American First Semiconductor
FIR5N70BPG,FIR5N70LG
Electrical Characteristics (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID=250μA，VGS=0
700
-
V
Breakdown Voltage Temperature
Coefficient
ID=250μA ,Reference
to 25℃
△
BVDSS/
△
TJ
V/℃
VDS=700V, V
VDS=
IDSS
Zero Gate Voltage Drain Current
μA
Gate-body leakage Current,
Forward
Gate-body leakage Curren
Reverse
IGSSF
IGSSR
On Characteristics
VGS(TH)
Date T
RDS(ON)
Ω
Dynam
-
-
920
70
8
-
-
-
pF
-
-
-
-
-
-
-
13
35
Charge
Drain Charge
45
100
60
VDD=350V，ID=5A
RG=25Ω (Note 3,4)
nS
25
80
20
-
35
15
VDS=480V,VGS=10V，
ID=5A (Note 3,4)
3.4
7.1
nC
-
ode Characteristics and Maximum Ratings
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
-
-
-
-
-
-
-
5
A
ISM
VSD
Trr
-
18
ID=5A
V
-
1.25
-
IS=5A,V GS =0V
diF/dt=100A/μs
(Note3)
Reverse Recovery Time
250
nS
Qrr
Reverse Recovery Charge
-
1.5
-
μC
Notes : 1, L=27.5mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
Page 2/9
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FIR5N70BPG,FIR5N70LG
Typical Characteristics
VGS
101
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
150oC
Bottom : 4.5 V
o
100
25 C
10-1
※
Notes :
μ
1. 250 s Pulse Test
℃
2. TC = 25
10-2
10
100
101
-1
VDS, Drain-Source Voltage [V]
Figure 1. On-Region C
6
5
※
Notes :
℃
1. VGS = 0V
μ
2. 250 s Pulse Test
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
400
200
0
12
10
8
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
C
V
DS = 120V
DS = 300V
VDS = 480V
V
C
iss
C
6
oss
※
4
Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = 4.5A
0
0
4
8
12
16
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Page 3/9
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FIR5N70BPG,FIR5N70LG
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
※Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage
vs Temperatu
Ope
101
0
75
100
125
150
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
1 0 0
D = 0 .5
0 .2
0 .1
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
3 . T J M T C P D Z θ JC(t)
:
℃
/W M a x .
1 0 -1
=
1 .2 5
0 .0 5
-
=
*
M
0 .0 2
0 .0 1
PDM
s in g le p u ls e
t1
1 0 -2
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve
Page 4/9
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FIR5N70BPG,FIR5N70LG
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
300nF
VGS
3mA
10%
VGS
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
ID
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
t p
t p
Time
Page 5/9
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FIR5N70BPG,FIR5N70LG
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I
10V
y Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Page 6/9
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FIR5N70BPG,FIR5N70LG
Package Dimension
TO-251
m
Page 7/9
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FIR5N70BPG,FIR5N70LG
Package Dimension
TO-252
Page 8/9
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FIR5N70BPG,FIR5N70LG
Declaration
z
FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
Any semiconductor product under certain conditions has the possibility of failure or failuas the
z
z
responsibility to comply with safety
standards and take safety measures when using FIRST products for systTo
avoid To avoid potential failure risks, which may cause personal inju
Product promotion endless, our company will wholeheartedly p
ATTACHMENT
Revision History
Date
REV
2018.01.01
1.0
Page 9/9
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