FIR6N40BPG [FIRST]
400V N-Channel MOSFET;
| 型号： | FIR6N40BPG |
| 厂家： | 
FIRST SEMI |
| 描述： | 400V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：2736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FIR6N40BPG,FIR6N40LG
PIN Connection TO-251/252
400V N-Channel MOSFET
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=22nC (Typ.).
□ BVDSS=400V,ID=6A
TO‐251
TO‐252
□ RDS(on) : 1.0 Ω (Max) @VG=10V
□ 100% Avalanche Tested
g
Schematic dia ram
D
G
S
Marking Diagram
YAWW
Y
A
= Year
YAWW
FIR6N40BP
= Assembly Location
= Work Week
FIR6N40L
WW
= Specific Device Code
FIR6N40BPG/LG
Value
400
6
Unit
V
Tj=25℃
A
Tj=100℃
3.6
±30
270
6
shold Voltage
V
ngle Pulse Avalanche Energy (note1)
mJ
PD
Tj
Avalanche Current (note2)
Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature
A
48
150
W
℃
℃
Tstg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.60
110
Unit
℃/W
℃/W
RθJC
RθJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
-
-
REV:1.0
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@ 2018 Copyright By American First Semiconductor
FIR6N40BPG,FIR6N40LG
Electrical Characteristics (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID=250μA，VGS=0
400
-
-
V
Breakdown Voltage Temperature
Coefficient
ID=250μA ,Reference
to 25℃
△
BVDSS/
△
TJ
V/℃
-
VDS=400V, VGS=0V
VDS=320V, Tj=
IDSS
Zero Gate Voltage Drain Current
μA
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
IGSSF
IGSSR
On Characteristics
VGS=
VGS(TH)
RDS(ON)
Date Thresh
Static
O
Dynamic C
-
80
980
105
20
pF
15
-
-
-
-
-
-
-
-
-
-
35
harge
rain Charge
140
D=200V，ID=6A
RG=25Ω (Note 3,4)
nS
55
85
-
22
2.3
6.4
-
-
-
VDS=320V,VGS=10V，
ID=6A (Note 3,4)
nC
ode Characteristics and Maximum Ratings
-
-
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
-
-
-
-
-
6
24
1.5
-
A
ISM
VSD
Trr
-
ID=6A
V
-
IS=6A,VGS =0V
diF/dt=100A/μs
(Note3)
Reverse Recovery Time
230
nS
Qrr
Reverse Recovery Charge
-
1.7
-
μC
Notes : 1, L=17.9mH, IAS=6A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
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FIR6N40BPG,FIR6N40LG
ypical Characteristics
T
VGS
Top :
15.0V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
101
Bottom: 5.0V
150oC
100
1
※
Notes :
μ
-1
10
1. 250 s Pulse Test
2. TC = 25
℃
-1
10
100
101
VDS, Drain-Source Voltage [
Figure 1. On-R
3.5
※
Notes :
℃
150
℃
2
1. V = 0V
2. 250 s Pulse Test
GS μ
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
vs
age
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 80V
Crss = C
gd
800
600
400
200
0
VDS = 200V
VDS = 320V
C
iss
C
6
oss
4
※
Note ;
1. VGS = 0 V
2. f = 1MHz
C
rss
2
※
Note: ID = 6A
0
-1
100
101
0
5
10
15
20
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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FIR6N40BPG,FIR6N40LG
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
※Notes :
0.9
0.8
1. VGS = 0 V
2. ID= 250 μA
-100
-50
0
50
100
T, Junction Temperature o
J
Figure 7. Break
0
25
50
75
100
125
150
℃
]
TC, Case Temperature [
ng Area
Figure 10. Maximum Drain Current
vs Case Temperature
1 00
D = 0 .5
0 .2
0 .1
※
N o tes
1 . Z θ JC (t)
2 . D uty F ac to r, D = t1/t2
3 . T JM T C P D Z θ JC (t)
:
℃
/W M a x.
=
1 .7 1
0 .0 5
1 0-1
-
=
*
M
0 .0 2
0 .0 1
PDM
s in g le p u ls e
t1
t2
1 0-2
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve
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FIR6N40BPG,FIR6N40LG
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FIR6N40BPG,FIR6N40LG
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FIR6N40BPG,FIR6N40LG
Package Dimension
TO-251
mm
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FIR6N40BPG,FIR6N40LG
Package Dimension
TO-252
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FIR6N40BPG,FIR6N40LG
Declaration
z
FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
Any semiconductor product under certain conditions has the possibility of failure or failuas the
z
z
responsibility to comply with safety
standards and take safety measures when using FIRST products for systTo
avoid To avoid potential failure risks, which may cause personal inju
Product promotion endless, our company will wholeheartedly p
ATTACHMENT
Revision History
Date
REV
2018.01.01
1.0
Page 9/9
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