HFM207-BS [FORMOSA]
Chip High Effciency Rectifiers;型号: | HFM207-BS |
厂家: | FORMOSA MS |
描述: | Chip High Effciency Rectifiers 功效 光电二极管 |
文件: | 总7页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Chip High Effciency Rectifiers
Formosa MS
HFM201-BS THRU HFM207-BS
List
1
2
2
2
2
3
4
4
4
5
6
6
7
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
A
Page.
7
Page 1
Chip High Effciency Rectifiers
Formosa MS
HFM201-BS THRU HFM207-BS
2.0A Surface Mount High
Effciency Rectifiers-50-1000V
Package outline
SMB-S
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
0.220(5.6)
0.205(5.2)
0.020(0.5) Typ.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge current capability.
0.083(2.1)
0.075(1.9)
0.138(3.5)
0.122(3.1)
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. HFM201-BS-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AA /SMB-S
0.067(1.7)
0.060(1.5)
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.040(1.0) Typ.
0.040 (1.0) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
Dimensions in inches and (millimeters)
• Weight : Approximated 0.072 gram
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
UNIT
A
MIN.
TYP.
PARAMETER
CONDITIONS
Symbol
IO
2.0
Forward rectified current
See Fig.2
IFSM
50
Forward surge current
A
8.3ms single half sine-wave (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
5.0
IR
μA
Reverse current
150
25
CJ
pF
OC
Diode junction capacitance
Storage temperature
f=1MHz and applied 4V DC reverse voltage
+175
-65
TSTG
Operating
*5
*1
*3
*4
*2
VRMS
(V)
VR
VF
trr
SYMBOLS
VRRM
(V)
temperature
TJ, (OC)
(V)
(V)
(ns)
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
35
50
HFM201-BS
HFM202-BS
HFM203-BS
100
200
400
70
100
200
400
1.00
1.30
50
140
280
420
560
700
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
*5 Maximum Reverse recovery time, note 1
-55 to +150
HFM204-BS
HFM205-BS
HFM206-BS
HFM207-BS
600
600
800
800
1.70
75
1000
1000
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
A
Page.
7
Page 2
Rating and characteristic curves (HFM201-BS THRU HFM207-BS)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
3.0
2.5
2.0
1.5
10
1.0
.1
1.0
0.5
0
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
0
50
100
150
LEAD TEMPERATURE ( C)
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
.001
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
60
50
8.3ms Single Half
TJ=25 C
1.6 1.8
.4
.6
.8
1.0 1.2 1.4
Sine Wave
FORWARD VOLTAGE,(V)
JEDEC method
40
30
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
10W
NONINDUCTIVE
NONINDUCTIVE
20
10
0
(
)
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
(
)
1
2
100
5
10
50
(+)
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
140
trr
120
100
80
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
60
40
20
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
A
Page.
7
Page 3
Chip High Effciency Rectifiers
Formosa MS
HFM201-BS THRU HFM207-BS
Pinning information
Pin
Simplified outline
Symbol
Pin1 cathode
Pin2 anode
1
2
1
2
Marking
Type number
Marking code
HFM201-BS
HFM202-BS
HFM203-BS
HFM204-BS
HFM205-BS
HFM206-BS
HFM207-BS
H21
H22
H23
H24
H25
H26
H27
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMB-S
A
B
C
0.078 (2.00)
0.059 (1.50)
0.110 (2.80)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
A
Page.
7
Page 4
Chip High Effciency Rectifiers
Formosa MS
HFM201-BS THRU HFM207-BS
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SMB-S
Item
Tolerance
Carrier width
A
B
C
d
D
D1
D
D1
D2
E
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.81
5.74
2.24
Carrier length
Carrier depth
Sprocket hole
1.50
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
330.00
50.00
178.00
62.00
13.00
1.75
5.50
8.00
4.00
2.00
F
P
P0
P1
T
W
W1
0.23
12.00
18.00
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
Page.
7
A
Page 5
Chip High Effciency Rectifiers
Formosa MS
HFM201-BS THRU HFM207-BS
Reel packing
COMPONENT
SPACING
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
APPROX.
REEL
(pcs)
BOX
(pcs)
PACKAGE
SMB-S
REEL SIZE
13"
CARTON
(pcs)
GROSS WEIGHT
(kg)
(m/m)
4,000
8.0
8,000
337*337*37
330
350*330*360
64,000
16.9
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
TL
Ramp-up
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
A
Page.
7
Page 6
Chip High Effciency Rectifiers
Formosa MS
HFM201-BS THRU HFM207-BS
High reliability test capabilities
Item Test
1. Solder Resistance
Conditions
Reference
MIL-STD-750D
METHOD-2031
at 260±5OC for 10±2sec.
immerse body into solder 1/16"±1/32"
at 245±5OC for 5 sec.
2. Solderability
MIL-STD-202F
METHOD-208
VR=80% rate at TJ=150OC for 168 hrs.
Rated average rectifier current at TA=25OC for 500hrs.
3. High Temperature Reverse Bias
4. Forward Operation Life
5. Intermittent Operation Life
6. Pressure Cooker
MIL-STD-750D
METHOD-1038
MIL-STD-750D
METHOD-1027
TA = 25OC, IF = IO
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
15PSIG at TA=121OC for 4 hrs.
MIL-STD-750D
METHOD-1051
-55OC to +125OC dwelled for 30 min.
7. Temperature Cycling
8. Forward Surge
and transferred for 5min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave , one surge.
at TA=85OC, RH=85% for 1000hrs.
at 175OC for 1000 hrs.
MIL-STD-750D
METHOD-1021
9. Humidity
MIL-STD-750D
METHOD-1031
10. High Temperature Storage Life
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121301
Issued Date
2011/03/10
Revised Date
-
Revision
A
Page.
7
Page 7
相关型号:
HFM207A
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
RECTRON
HFM207A-W
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-214AC, PLASTIC PACKAGE-2
RECTRON
HFM207L
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere
RECTRON
HFM207W
SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
RECTRON
©2020 ICPDF网 联系我们和版权申明