AOD9N50 [FREESCALE]
500V,9A N-Channel MOSFET; 500V ，9A N沟道MOSFET
| 型号： | AOD9N50 |
| 厂家： | 
Freescale |
| 描述： | 500V,9A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
General Description
advanced high voltage MOSFET process that is designed
popular AC-DC applications.
The AOD9N50 & AOI9N50 have been fabricated using an
to deliver high levels of performance and robustness in
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be
designs.
adopted quickly into new and existing offline power supply
Features
VDS
600V@150℃
9A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.86Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
9
V
A
TC=25°C
Continuous Drain
CurrentB
ID
TC=100°C
5.7
Pulsed Drain Current C
IDM
27
3.8
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
216
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
433
mJ
V/ns
W
W/ oC
5
178
PD
Power Dissipation B
Derate above 25oC
1.4
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
45
-
55
0.5
0.7
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
RθJC
0.5
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AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.56
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=4.5A
VDS=40V, ID=4.5A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
3.3
3.9
0.71
9
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.86
Ω
S
VSD
0.72
1
9
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
27
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
760
65
962
98
8
1160
130
12
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
4.5
1.5
V
3.2
5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
15
19.5
4.6
7.1
24
24
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=250V, ID=9A,
Turn-On Rise Time
44
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
55
Turn-Off Fall Time
35
trr
IF=9A,dI/dt=100A/µs,VDS=100V
IF=9A,dI/dt=100A/µs,VDS=100V
260
2.8
332
3.5
400
4.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
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AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
100
10
1
10V
-55°C
VDS=40V
6.5V
6V
125°C
6
4
5.5V
25°C
2
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
2.0
1.7
1.4
1.1
0.8
0.5
0.2
3
2.5
2
VGS=10V
ID=4.5A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
4
8
12
16
20
Temperature (°C)
ID (A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
125°C
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
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AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
100
10
15
12
9
VDS=400V
ID=4.5A
Ciss
Coss
6
Crss
3
1
0
0.1
1
10
100
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
800
600
400
200
0
100
10
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
1
DC
10ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
0.0001
0.001
0.01
0.1
1
10
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=0.7°C/W
R
0.1
0.01
PD
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
10
8
6
4
40
2
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note B)
TCASE (°C)
Figure 13: Current De-rating (Note B)
400
TJ(Max)=150°C
TA=25°C
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
1
0.1
PD
0.01
Ton
Single Pulse
0.001
T
0.001
1E-05
0.0001
0.01
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
0.1
1
10
100
1000
5/6
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AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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